SFF40N60N SFF40N60P - Solid State Devices, Inc.

SFF40N60N
SFF40N60P
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
40 AMP / 600 Volts
Typ 40 mΩ
N-Channel POWER MOSFET
Part Number / Ordering Information 1/
SFF40N60 __ __ __
│
│
│
│
│
│
│
│
└
2/
│ └ Screening __ = Not Screened
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
│
__ = Straight Leads
└ Lead Option
DB = Down Bend
UB = Up Bend
Package N = TO-258
P = TO-259
Features:










Rugged Construction with Polysilicon Gate
Very Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed, Isolated Surface Mount Power Package
Ceramic Seals for Improved Hermeticity
TX, TXV, S-Level screening available
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
VDS
600
Volts
Gate – Source Voltage
VGS
±20
Volts
Continues Drain Current
ID
EAR
EAS
Amps
Top & Tstg
40
3
1900
150
114
-55 to +150
RθJC
0.83
ºC/W
Avalanche Energy, repetitive
Avalanche energy, single pulse
Power Dissipation
TC = 25ºC
TC = 55ºC
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
NOTES:
PD
TO-258 (N)
mJ
W
ºC
TO-259 (P)
* Pulse test: pulse width = 300µsec, duty cycle = 2%
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0059A
DOC
SFF40N60N
SFF40N60P
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics 3/
Symbol
Min
Typ
Max
Units
BVDSS
600
650
––
Volts
ID = 25A
ID = 15A
ID = 15A, 125°C
RDS(on)1
RDS(on)2
RDS(on)3
––
––
––
40
40
80
50
––
––
mΩ
TA = 25ºC
TA = 125ºC
TA = -55ºC
VGS(th)
2.0
1.0
-
3.0
2.2
3.3
4.0
5.0
V
IGSS
––
––
±100
nA
IDSS1
IDSS2
––
––
0.5
500
25
750
µA
µA
gfs
10
25
––
Mho
Drain to Source Breakdown Voltage
(VGS = 0V, ID = 250µA)
Drain to Source On State Resistance
(VGS = 10V)
Gate Threshold Voltage
(VDS = VGS, ID = 4mA)
Gate to Source Leakage
(At Rated VGS)
Zero Gate Voltage Drain Current
(VGS = 0V)
VDS = Rated, TA = 25ºC
VDS = Rated, TA = 125ºC
Forward Transconductance *
(VDS > ID(on) x RDS(on) Max, IDS = 50% Rated
ID)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V
VDS = 300V
ID = 16.5A
Qg
Qgs
Qgd
––
––
––
150
40
50
200
60
65
nC
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
VDD = 300V
ID = 16.5A
RG = 2Ω
td(on)
tr
td(off)
tf
––
––
––
––
45
20
200
20
60
40
250
30
nsec
Diode Forward Voltage *
(IS = Rated ID, VGS = 0V, TJ = 25°C)
VSD
––
0.875
1.0
V
Diode Reverse Recovery Time
Reverse Recovery Charge
(IF = 10A, di/dt = 100A/µsec, TJ =
25°C)
trr
QRR
––
––
400
5.6
550
––
nsec
µC
Ciss
––
––
––
15.2
9.2
8800
400
––
––
––
nF
nF
pF
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V, VDS = 25V, f = 1 MHz
VGS = 0V, VDS = 100V, f = 1 MHz
VGS = 0V, VDS = 25V, f = 1 MHz
VGS = 0V, VDS = 100V, f = 1 MHz
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Coss
DATA SHEET #: FT0059A
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Case Outline: TO-258 (N)
SFF40N60N
SFF40N60P
Optional Lead Bend Configuration
NDB & PDB
NUB & PUB
Case Outline: TO-259 (P)
NOTES:
* Pulse test: pulse width = 300µsec, duty cycle
= 2%
1/ For ordering information, price, and
availability - contact factory.
2/ Screening based on MIL-PRF-19500.
Screening flows available on request.
3/ Unless otherwise specified, all electrical
characteristics @25ºC.
Available Part Numbers:
SFF40N60N; SFF40N60NDB;
SFF40N60NUB;
SFF40N60P; SFF40N60PDB;
SFF40N60PUB
PIN ASSIGNMENT (Standard)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Package
Drain
Source
Gate
TO-258 (N)
Pin 1
Pin 2
Pin 3
TO-259 (P)
Pin 1
Pin 2
Pin 3
DATA SHEET #: FT0059A
DOC