TS4962M 3W Filter-free Class D Audio Power Amplifier ■ Operating from VCC = 2.4V to 5.5V ■ Standby mode active low ■ Output power: 3W into 4Ω and 1.75W into 8Ω with 10% THD+N max and 5V power supply. ■ Pin connections Output power: 2.3W @5V or 0.75W @ 3.0V into 4Ω with 1% THD+N max. ■ Output power: 1.4W @5V or 0.45W @ 3.0V into 8Ω with 1% THD+N max. ■ Adjustable gain via external resistors ■ Low current consumption 2mA @ 3V ■ Efficiency: 88% typ. ■ Signal to noise ratio: 85dB typ. ■ PSRR: 63dB typ. @217Hz with 6dB gain ■ PWM base frequency: 250kHz ■ Low pop & click noise IN+ GND OUT- 1/A1 2/A2 3/A3 VDD VDD GND 4/B1 5/B2 6/B3 IN- STBY OUT+ 8/C2 9/C3 7/C1 IN+: positive differential input IN-: negative differential input VDD: analog power supply GND: power supply ground STBY: standby pin (active low) OUT+: positive differential output OUT-: negative differential output Block diagram B1 B2 Vcc Thermal shutdown protection ■ Available in flip-chip 9 x 300µm (Pb-free) 300k ■ C2 Stdby C1 InIn+ Description A1 Internal Bias Out+ 150k C3 Output PWM + 150k The TS4962M is a differential Class-D BTL power amplifier. It is able to drive up to 2.3W into a 4Ω load and 1.4W into a 8Ω load at 5V. It achieves outstanding efficiency (88%typ.) compared to classical Class-AB audio amps. The gain of the device can be controlled via two external gain-setting resistors. Pop & click reduction circuitry provides low on/off switch noise while allowing the device to start within 5ms. A standby function (active low) allows the reduction of current consumption to 10nA typ. H Bridge A3 Out- Oscillator GND A2 B3 Applications ■ Cellular Phone ■ PDA ■ Notebook PC Order Codes Part Number TS4962MEIJT December 2005 Temperature Range Package Packing Marking -40, +85°C Lead-Free Flip-Chip Tape & Reel 62 Rev 3 1/32 www.st.com 32 Absolute Maximum Ratings 1 TS4962M Absolute Maximum Ratings Table 1. Key parameters and their absolute maximum ratings Symbol Parameter VCC Supply Voltage(1), (2) Vin Input Voltage (3) Value Unit 6 V GND to VCC V Toper Operating Free-Air Temperature Range -40 to + 85 °C Tstg Storage Temperature -65 to +150 °C Maximum Junction Temperature 150 °C Rthja Thermal Resistance Junction to Ambient (4) 200 °C/W Pdiss Power Dissipation ESD Human Body Model ESD Tj Latch-up VSTBY Internally Limited(5) 2 kV Machine Model 200 V Latch-up Immunity 200 mA GND to VCC V 260 °C Standby Pin Voltage Maximum Voltage (6) Lead Temperature (soldering, 10sec) 1. Caution: This device is not protected in the event of abnormal operating conditions, such as for example, shortcircuiting between any one output pin and ground, between any one output pin and VCC, and between individual output pins. 2. All voltages values are measured with respect to the ground pin. 3. The magnitude of input signal must never exceed VCC + 0.3V / GND - 0.3V. 4. Device is protected in case of over temperature by a thermal shutdown active @ 150°C. 5. Exceeding the power derating curves during a long period, involves abnormal operating condition. 6. The magnitude of standby signal must never exceed VCC + 0.3V / GND - 0.3V. Table 2. Operating conditions Symbol Parameter Value Unit 2.4 to 5.5 V 0.5 to VCC - 0.8 V 1.4 ≤ VSTBY ≤ VCC GND ≤ VSTB ≤ 0.4 (4) V Load Resistor ≥4 Ω Thermal Resistance Junction to Ambient (5) 90 °C/W VCC Supply Voltage(1) VIC Common Mode Input Voltage Range(2) Standby Voltage Input: (3) VSTBY RL Rthja Device ON Device OFF 1. For VCC from 2.4V to 2.5V, the operating temperature range is reduced to 0°C ≤ Tamb ≤ 70°C. 2. For VCC from 2.4V to 2.5V, the common mode input range must be set at VCC/2. 3. Without any signal on VSTBY, the device will be in standby. 4. Minimum current consumption shall be obtained when VSTBY = GND. 5. With heat sink surface 2/32 = 125mm2. TS4962M Application Component Information Table 3. Component information Component Functional Description Cs Bypass supply capacitor. To install as close as possible to the TS4962M to minimize high-frequency ripple. A 100nF ceramic capacitor should be added to enhance the power supply filtering at high frequency. Rin Input resistor to program the TS4962M differential gain (Gain = 300kΩ/Rin with Rin in kΩ). Thanks to common mode feedback, these input capacitors are optional. However, they can be added to form with Rin a 1st order high pass filter with -3dB cut-off frequency = 1/(2*π*Rin*Cin). Input Capacitor Figure 1. Typical application schematics Vcc B1 Vcc 300k C2 Stdby GND GND Rin + C1 Differential Input In- Cs 1u B2 Vcc In+ InIn+ A1 - Internal Bias GND Out+ 150k C3 Output PWM + H Bridge SPEAKER Rin Input capacitors are optional A3 150k Out- Oscillator GND TS4962 B3 A2 GND GND Vcc B1 Vcc C2 Stdby GND GND + Rin C1 Differential Input In- InIn+ - A1 Internal Bias 4 Ohms LC Output Filter GND Out+ 150k C3 15µH Output PWM + 2µF H GND Bridge Rin Input capacitors are optional GND Cs 1u B2 Vcc In+ 300k 2 Application Component Information A3 150k Out- Load 2µF 15µH Oscillator GND TS4962 A2 B3 30µH GND 1µF GND 1µF 30µH 8 Ohms LC Output Filter 3/32 Electrical Characteristics 3 TS4962M Electrical Characteristics Table 4. Symbol ICC ISTBY VOO Pout THD + N VCC = +5V, GND = 0V, VIC = 2.5V, Tamb = 25°C (unless otherwise specified) Parameter Conditions Supply Current No input signal, no load (1) No input signal, VSTBY = GND Standby Current Output Offset Voltage No input signal, RL = 8Ω Output Power Total Harmonic Distortion + Noise Efficiency Efficiency PSRR CMRR Gain RSTBY FPWM SNR tWU tSTBY VN Min. Power Supply Rejection Ratio with Inputs Grounded (2) Common Mode Rejection Ratio Gain Value G=6dB THD = 1% Max, F = 1kHz, RL = 4Ω THD = 10% Max, F = 1kHz, RL = 4Ω THD = 1% Max, F = 1kHz, RL = 8Ω THD = 10% Max, F = 1kHz, RL = 8Ω Pout = 900mWRMS, G = 6dB, 20Hz < F < 20kHz RL = 8Ω + 15µH, BW < 30kHz Pout = 1WRMS, G = 6dB, F = 1kHz, RL = 8Ω + 15µH, BW < 30kHz Pout = 2WRMS, RL = 4Ω + ≥ 15µH Pout =1.2WRMS, RL = 8Ω+ ≥ 15µH Rin in kΩ Internal Resistance from Standby to GND Pulse Width Modulator Base Frequency Signal to Noise Ratio A Weighting, Pout = 1.2W, RL = 8Ω Wake-up Time Standby Time F = 20Hz to 20kHz, G = 6dB Unweighted RL = 4Ω A weighted RL = 4Ω Unweighted RL = 8Ω A weighted RL = 8Ω Unweighted RL = 4Ω + 15µH A weighted RL = 4Ω + 15µH Output Voltage Noise Unweighted RL = 4Ω + 30µH A weighted RL = 4Ω + 30µH Unweighted RL = 8Ω + 30µH A weighted RL = 8Ω + 30µH Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter Max. Unit 2.3 3.3 mA 10 1000 nA 3 25 mV 2.3 3 1.4 1.75 W 1 % 0.4 78 88 F = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp F = 217Hz, RL = 8Ω, G = 6dB, ∆Vicm = 200mVpp Typ. % 63 dB 57 dB 273k Ω -----------------R in 300k Ω -----------------R in 327k Ω -----------------R in V/V 273 300 327 kΩ 180 250 320 kHz 85 5 5 10 10 dB ms ms 85 60 86 62 83 60 88 64 78 57 87 65 82 59 µVRMS 1. Standby mode is active when VSTBY is tied to GND. 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinusoidal signal to VCC @ F = 217Hz. 4/32 TS4962M Table 5. Symbol Electrical Characteristics VCC = +4.2V, GND = 0V, VIC = 2.5V, Tamb = 25°C (unless otherwise specified) (1) Parameter Conditions Min. Typ. Max. Unit Supply Current No input signal, no load 2.1 3 mA ISTBY Standby Current (2) No input signal, VSTBY = GND 10 1000 nA VOO Output Offset Voltage No input signal, RL = 8Ω 3 25 mV Output Power G=6dB THD = 1% Max, F = 1kHz, RL = 4Ω THD = 10% Max, F = 1kHz, RL = 4Ω THD = 1% Max, F = 1kHz, RL = 8Ω THD = 10% Max, F = 1kHz, RL = 8Ω ICC Pout Total Harmonic THD + N Distortion + Noise Efficiency Efficiency 1.6 2 0.95 1.2 Pout = 600mWRMS, G = 6dB, 20Hz < F < 20kHz RL = 8Ω + 15µH, BW < 30kHz Pout = 700mWRMS, G = 6dB, F = 1kHz, RL = 8Ω + 15µH, BW < 30kHz W 1 % 0.35 Pout = 1.45WRMS, RL = 4Ω + ≥ 15µH Pout =0.9WRMS, RL = 8Ω+ ≥ 15µH 78 88 % PSRR Power Supply Rejection Ratio with Inputs Grounded (3) F = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp 63 dB CMRR Common Mode Rejection Ratio F = 217Hz, RL = 8Ω, G = 6dB, ∆Vicm = 200mVpp 57 dB Gain Value Rin in kΩ Gain 273k Ω -----------------R in 300k Ω -----------------R in 327k Ω -----------------R in V/V RSTBY Internal Resistance from Standby to GND 273 300 327 kΩ FPWM Pulse Width Modulator Base Frequency 180 250 320 kHz SNR Signal to Noise Ratio tWU Wake-upTime 5 10 ms tSTBY Standby Time 5 10 ms VN Output Voltage Noise A Weighting, Pout = 0.9W, RL = 8Ω 85 F = 20Hz to 20kHz, G = 6dB Unweighted RL = 4Ω A weighted RL = 4Ω 85 60 Unweighted RL = 8Ω A weighted RL = 8Ω 86 62 Unweighted RL = 4Ω + 15µH A weighted RL = 4Ω + 15µH 83 60 Unweighted RL = 4Ω + 30µH A weighted RL = 4Ω + 30µH 88 64 Unweighted RL = 8Ω + 30µH A weighted RL = 8Ω + 30µH 78 57 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 87 65 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 82 59 dB µVRMS 1. All electrical values are guaranteed with correlation measurements at 2.5V and 5V. 2. Standby mode is active when VSTBY is tied to GND. 3. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinusoidal signal to VCC @ F = 217Hz. 5/32 Electrical Characteristics Table 6. Symbol TS4962M VCC = +3.6V, GND = 0V, VIC = 2.5V, Tamb = 25°C (unless otherwise specified) (1) Parameter Conditions Min. Typ. Max. Unit Supply Current No input signal, no load 2 2.8 mA ISTBY Standby Current (2) No input signal, VSTBY = GND 10 1000 nA VOO Output Offset Voltage No input signal, RL = 8Ω 3 25 mV ICC Pout Output Power Total Harmonic THD + N Distortion + Noise Efficiency Efficiency G=6dB THD = 1% Max, F = 1kHz, RL = 4Ω THD = 10% Max, F = 1kHz, RL = 4Ω THD = 1% Max, F = 1kHz, RL = 8Ω THD = 10% Max, F = 1kHz, RL = 8Ω 1.15 1.51 0.7 0.9 Pout = 500mWRMS, G = 6dB, 20Hz < F< 20kHz RL = 8Ω + 15µH, BW < 30kHz Pout = 500mWRMS, G = 6dB, F = 1kHz, RL = 8Ω + 15µH, BW < 30kHz W 1 % 0.27 Pout = 1WRMS, RL = 4Ω + ≥ 15µH Pout =0.65WRMS, RL = 8Ω+ ≥ 15µH 78 88 % PSRR Power Supply Rejection Ratio with Inputs Grounded (3) F = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp 62 dB CMRR Common Mode Rejection Ratio F = 217Hz, RL = 8Ω, G = 6dB, ∆Vicm = 200mVpp 56 dB Gain Value Rin in kΩ Gain 273k Ω -----------------R in 300k Ω -----------------R in 327k Ω -----------------R in V/V RSTBY Internal Resistance from Standby to GND 273 300 327 kΩ FPWM Pulse Width Modulator Base Frequency 180 250 320 kHz SNR Signal to Noise Ratio tWU Wake-upTime 5 10 ms tSTBY Standby Time 5 10 ms VN A Weighting, Pout = 0.6W, RL = 8Ω 83 F = 20Hz to 20kHz, G = 6dB Unweighted RL = 4Ω A weighted RL = 4Ω 83 57 Unweighted RL = 8Ω A weighted RL = 8Ω 83 61 Unweighted RL = 4Ω + 15µH A weighted RL = 4Ω + 15µH 81 58 Output Voltage Noise Unweighted RL = 4Ω + 30µH A weighted RL = 4Ω + 30µH 87 62 Unweighted RL = 8Ω + 30µH A weighted RL = 8Ω + 30µH 77 56 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 85 63 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 80 57 dB µVRMS 1. All electrical values are guaranteed with correlation measurements at 2.5V and 5V. 2. Standby mode is active when VSTBY is tied to GND. 3. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinusoidal signal to VCC @ F = 217Hz. 6/32 TS4962M Table 7. Symbol Electrical Characteristics VCC = +5V, GND = 0V, VIC = 2.5V, Tamb = 25°C (unless otherwise specified) (1) Parameter Conditions Min. Typ. Max. Unit Supply Current No input signal, no load 1.9 2.7 mA ISTBY Standby Current (2) No input signal, VSTBY = GND 10 1000 nA VOO Output Offset Voltage No input signal, RL = 8Ω 3 25 mV ICC Pout Output Power Total Harmonic THD + N Distortion + Noise Efficiency Efficiency G=6dB THD = 1% Max, F = 1kHz, RL = 4Ω THD = 10% Max, F = 1kHz, RL = 4Ω THD = 1% Max, F = 1kHz, RL = 8Ω THD = 10% Max, F = 1kHz, RL = 8Ω 0.75 1 0.5 0.6 Pout = 350mWRMS, G = 6dB, 20Hz < F < 20kHz RL = 8Ω + 15µH, BW < 30kHz Pout = 350mWRMS, G = 6dB, F = 1kHz, RL = 8Ω + 15µH, BW < 30kHz W 1 % 0.21 Pout = 0.7WRMS, RL = 4Ω + ≥ 15µH Pout = 0.45WRMS, RL = 8Ω+ ≥ 15µH 78 88 % PSRR Power Supply Rejection Ratio with Inputs Grounded (3) F = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp 60 dB CMRR Common Mode Rejection Ratio F = 217Hz, RL = 8Ω, G = 6dB, ∆Vicm = 200mVpp 54 dB Gain Value Rin in kΩ Gain 273k Ω -----------------R in 300k Ω -----------------R in 327k Ω -----------------R in V/V RSTBY Internal Resistance from Standby to GND 273 300 327 kΩ FPWM Pulse Width Modulator Base Frequency 180 250 320 kHz SNR Signal to Noise Ratio tWU Wake-upTime 5 10 ms tSTBY Standby Time 5 10 ms VN A Weighting, Pout = 0.4W, RL = 8Ω 82 f = 20Hz to 20kHz, G = 6dB Unweighted RL = 4Ω A weighted RL = 4Ω 83 57 Unweighted RL = 8Ω A weighted RL = 8Ω 83 61 Unweighted RL = 4Ω + 15µH A weighted RL = 4Ω + 15µH 81 58 Output Voltage Noise Unweighted RL = 4Ω + 30µH A weighted RL = 4Ω + 30µH 87 62 Unweighted RL = 8Ω + 30µH A weighted RL = 8Ω + 30µH 77 56 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 85 63 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 80 57 dB µVRMS 1. All electrical values are guaranteed with correlation measurements at 2.5V and 5V. 2. Standby mode is active when VSTBY is tied to GND. 3. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinusoidal signal to VCC @ F = 217Hz. 7/32 Electrical Characteristics Table 8. Symbol ICC TS4962M VCC = +2.5V, GND = 0V, VIC = 2.5V, Tamb = 25°C (unless otherwise specified) Parameter Conditions Supply Current (1) Typ. Max. Unit No input signal, no load 1.7 2.4 mA No input signal, VSTBY = GND 10 1000 nA 3 25 mV ISTBY Standby Current VOO Output Offset Voltage No input signal, RL = 8Ω Pout Output Power Total Harmonic THD + N Distortion + Noise Efficiency Efficiency Min. G=6dB THD = 1% Max, F = 1kHz, RL = 4Ω THD = 10% Max, F = 1kHz, RL = 4Ω THD = 1% Max, F = 1kHz, RL = 8Ω THD = 10% Max, F = 1kHz, RL = 8Ω 0.52 0.71 0.33 0.42 Pout = 200mWRMS, G = 6dB, 20Hz < F< 20kHz RL = 8Ω + 15µH, BW < 30kHz Pout = 200WRMS, G = 6dB, F = 1kHz, RL = 8Ω + 15µH, BW < 30kHz W 1 % 0.19 Pout = 0.47WRMS, RL = 4Ω + ≥ 15µH Pout = 0.3WRMS, RL = 8Ω+ ≥ 15µH 78 88 % PSRR Power Supply Rejection Ratio with Inputs Grounded (2) F = 217Hz, RL = 8Ω, G=6dB, Vripple = 200mVpp 60 dB CMRR Common Mode Rejection Ratio F = 217Hz, RL = 8Ω, G = 6dB, ∆Vicm = 200mVpp 54 dB Gain Value Rin in kΩ Gain 273k Ω -----------------R in 300k Ω -----------------R in 327k Ω -----------------R in V/V RSTBY Internal Resistance from Standby to GND 273 300 327 kΩ FPWM Pulse Width Modulator Base Frequency 180 250 320 kHz SNR Signal to Noise Ratio tWU Wake-upTime 5 10 ms tSTBY Standby Time 5 10 ms VN A Weighting, Pout = 1.2W, RL = 8Ω 80 F = 20Hz to 20kHz, G = 6dB Unweighted RL = 4Ω A weighted RL = 4Ω 85 60 Unweighted RL = 8Ω A weighted RL = 8Ω 86 62 Unweighted RL = 4Ω + 15µH A weighted RL = 4Ω + 15µH 76 56 Output Voltage Noise Unweighted RL = 4Ω + 30µH A weighted RL = 4Ω + 30µH 82 60 Unweighted RL = 8Ω + 30µH A weighted RL = 8Ω + 30µH 67 53 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 78 57 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 74 54 dB µVRMS 1. Standby mode is active when VSTBY is tied to GND. 2. Dynamic measurements - 20*log(rms(Vout)/rms(Vripple)). Vripple is the superimposed sinusoidal signal to VCC @ F = 217Hz. 8/32 TS4962M Table 9. Symbol ICC Electrical Characteristics VCC = +2.4V, GND = 0V, VIC = 2.5V, Tamb = 25°C (unless otherwise specified) Parameter Conditions Supply Current (1) No input signal, VSTBY = GND 10 nA 3 mV Output Offset Voltage No input signal, RL = 8Ω Output Power G=6dB THD = 1% Max, F = 1kHz, RL = 4Ω THD = 10% Max, F = 1kHz, RL = 4Ω THD = 1% Max, F = 1kHz, RL = 8Ω THD = 10% Max, F = 1kHz, RL = 8Ω Total Harmonic Distortion + Noise Pout = 200mWRMS, G = 6dB, 20Hz < F< 20kHz RL = 8Ω + 15µH, BW < 30kHz 1 Pout = 0.38WRMS, RL = 4Ω + ≥ 15µH Pout = 0.25WRMS, RL = 8Ω+ ≥ 15µH 77 86 % Common Mode Rejection Ratio F = 217Hz, RL = 8Ω, G = 6dB, ∆Vicm = 200mVpp 54 dB Gain Value Rin in kΩ Efficiency Efficiency Gain RSTBY Internal Resistance from Standby to GND FPWM Pulse Width Modulator Base Frequency SNR Signal to Noise Ratio tWU tSTBY VN Unit mA VOO CMRR Max. 1.7 Standby Current THD + N Typ. No input signal, no load ISTBY Pout Min. 0.48 0.65 0.3 0.38 W % 273k Ω -----------------R in 300k Ω -----------------R in 327k Ω -----------------R in V/V 273 300 327 kΩ 250 kHz 80 dB Wake-upTime 5 ms Standby Time 5 ms A Weighting, Pout = 1.2W, RL = 8Ω F = 20Hz to 20kHz, G = 6dB Unweighted RL = 4Ω A weighted RL = 4Ω 85 60 Unweighted RL = 8Ω A weighted RL = 8Ω 86 62 Unweighted RL = 4Ω + 15µH A weighted RL = 4Ω + 15µH 76 56 Output Voltage Noise Unweighted RL = 4Ω + 30µH A weighted RL = 4Ω + 30µH 82 60 Unweighted RL = 8Ω + 30µH A weighted RL = 8Ω + 30µH 67 53 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 78 57 Unweighted RL = 4Ω + Filter A weighted RL = 4Ω + Filter 74 54 µVRMS 1. Standby mode is active when VSTBY is tied to GND. 9/32 Electrical characteristic curves 4 TS4962M Electrical characteristic curves In the graphs that follow, the following abbreviations are used: ● RL + 15µH or 30µH = pure resistor+ very low series resistance inductor ● Filter = LC output filter (1µF+30µH for 4Ω and 0.5µF+60µH for 8Ω) ● All measurements done with Cs1=1µF and Cs2=100nF except for PSRR where Cs1 is removed. Figure 2. Test diagram for measurements Vcc 1uF 100nF Cs2 Cs1 + Cin GND GND Rin Out+ In+ 15uH or 30uH 150k TS4962 Cin Rin or 4 or 8 Ohms 5th order RL filter LC Filter In- 50kHz low pass Out- 150k GND Audio Measurement Bandwidth < 30kHz Figure 3. Test diagram for PSRR measurements 100nF Cs2 20Hz to 20kHz Vcc GND 4.7uF GND Rin Out+ In+ 15uH or 30uH 150k or TS4962 4.7uF Rin 4 or 8 Ohms 5th order RL LC Filter InOut- 150k GND GND 5th order 50kHz low pass filter 10/32 Reference RMS Selective Measurement Bandwidth=1% of Fmeas 50kHz low pass filter TS4962M Figure 4. Electrical characteristic curves Current consumption vs. power supply voltage Figure 5. 2.5 2.5 Current Consumption (mA) Current Consumption (mA) No load Tamb=25°C 2.0 1.5 1.0 0.5 0.0 2.0 1.5 1.0 0.5 0.0 0 Current consumption vs. standby voltage 1 2 3 4 5 Vcc = 5V No load Tamb=25°C 0 1 2 Figure 6. Current consumption vs. standby voltage Figure 7. 2.0 4 5 Output offset voltage vs. common mode input voltage 10 G = 6dB Tamb = 25°C 8 1.5 Voo (mV) Current Consumption (mA) 3 Standby Voltage (V) Power Supply Voltage (V) 1.0 6 Vcc=5V Vcc=3.6V 4 0.5 0.0 0.0 2 Vcc = 3V No load Tamb=25°C 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 Vcc=2.5V 0.5 1.0 Figure 8. 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Common Mode Input Voltage (V) Standby Voltage (V) Efficiency vs. output power Figure 9. 100 Efficiency vs. output power 100 200 600 400 60 300 40 Power Dissipation 20 0 0.0 0.5 200 Vcc=5V RL=4Ω + ≥ 15µH 100 F=1kHz THD+N≤1% 0 1.0 1.5 2.0 2.3 Output Power (W) 80 150 Efficiency (%) 500 60 100 Power Dissipation 40 20 0 0.0 0.1 Vcc=3V 50 RL=4Ω + ≥ 15µH F=1kHz THD+N≤1% 0 0.2 0.3 0.4 0.5 0.6 0.7 Output Power (W) Power Dissipation (mW) Efficiency Efficiency Power Dissipation (mW) Efficiency (%) 80 11/32 Electrical characteristic curves TS4962M Figure 10. Efficiency vs. output power Figure 11. Efficiency vs. output power 100 100 75 100 60 40 Power Dissipation 50 Vcc=5V RL=8Ω + ≥ 15µH F=1kHz THD+N≤1% 20 0 0.0 0.2 Figure 12. 0.4 0.6 0.8 Output Power (W) 1.0 80 Efficiency 50 60 40 20 0 1.4 1.2 0 0.0 0.1 Output power vs. power supply voltage Figure 13. Vcc=3V RL=8Ω + ≥ 15µH F=1kHz THD+N≤1% 0.2 0.3 Output Power (W) 0 0.5 0.4 Output power vs. power supply voltage 2.0 3.5 RL = 4Ω + ≥ 15µH F = 1kHz 3.0 BW < 30kHz Tamb = 25°C 2.5 THD+N=10% Output power (W) Output power (W) 25 Power Dissipation Power Dissipation (mW) Efficiency (%) Efficiency Efficiency (%) 80 Power Dissipation (mW) 150 2.0 1.5 THD+N=1% 1.0 RL = 8Ω + ≥ 15µH F = 1kHz BW < 30kHz 1.5 Tamb = 25°C THD+N=10% 1.0 0.5 THD+N=1% 0.5 0.0 0.0 2.5 3.0 3.5 4.0 Vcc (V) 4.5 5.0 5.5 Figure 14. PSRR vs. frequency 4.0 Vcc (V) 4.5 5.0 5.5 -30 -20 -40 Vcc=5V, 3.6V, 2.5V -50 -30 -40 Vcc=5V, 3.6V, 2.5V -50 -60 -60 -70 -70 20 100 Vripple = 200mVpp Inputs = Grounded G = 6dB, Cin = 4.7µF RL = 4Ω + 30µH ∆R/R≤0.1% Tamb = 25°C -10 PSRR (dB) -20 PSRR (dB) 3.5 0 Vripple = 200mVpp Inputs = Grounded G = 6dB, Cin = 4.7µF RL = 4Ω + 15µH ∆R/R≤0.1% Tamb = 25°C -10 12/32 3.0 Figure 15. PSRR vs. frequency 0 -80 2.5 1000 Frequency (Hz) 10000 20k -80 20 100 1000 Frequency (Hz) 10000 20k TS4962M Electrical characteristic curves Figure 16. PSRR vs. frequency Figure 17. PSRR vs. frequency 0 0 Vripple = 200mVpp Inputs = Grounded G = 6dB, Cin = 4.7µF RL = 4Ω + Filter ∆R/R≤0.1% Tamb = 25°C PSRR (dB) -20 -30 -20 -40 Vcc=5V, 3.6V, 2.5V -30 -40 -50 -50 -60 -60 -70 -70 -80 -80 20 100 10000 20k 1000 Frequency (Hz) Figure 18. PSRR vs. frequency 20 1000 Frequency (Hz) 10000 20k -30 -20 -40 Vcc=5V, 3.6V, 2.5V -50 -30 -40 -60 -70 -70 -80 Figure 20. 100 10000 20k 1000 Frequency (Hz) -20 20 100 1000 Frequency (Hz) 10000 20k PSRR vs. common mode input voltage Figure 21. CMRR vs. frequency 0 -10 Vcc=5V, 3.6V, 2.5V -50 -60 20 Vripple = 200mVpp Inputs = Grounded G = 6dB, Cin = 4.7µF ∆R/R≤0.1% RL = 8Ω + Filter Tamb = 25°C -10 PSRR (dB) -20 -80 100 0 Vripple = 200mVpp Inputs = Grounded G = 6dB, Cin = 4.7µF RL = 8Ω + 30µH ∆R/R≤0.1% Tamb = 25°C -10 PSRR (dB) Vcc=5V, 3.6V, 2.5V Figure 19. PSRR vs. frequency 0 0 Vripple = 200mVpp F = 217Hz, G = 6dB RL ≥ 4Ω + ≥ 15µH Tamb = 25°C Vcc=2.5V -20 -30 CMRR (dB) PSRR(dB) Vripple = 200mVpp Inputs = Grounded G = 6dB, Cin = 4.7µF RL = 8Ω + 15µH ∆R/R≤0.1% Tamb = 25°C -10 PSRR (dB) -10 Vcc=3.6V -40 RL=4Ω + 15µH G=6dB ∆Vicm=200mVpp ∆R/R≤0.1% Cin=4.7µF Tamb = 25°C -40 -50 Vcc=5V, 3.6V, 2.5V -60 -70 -60 Vcc=5V -80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Common Mode Input Voltage (V) 4.5 5.0 20 100 1000 Frequency (Hz) 10000 20k 13/32 Electrical characteristic curves TS4962M Figure 22. CMRR vs. frequency Figure 23. CMRR vs. frequency 0 0 RL=4Ω + 30µH G=6dB ∆Vicm=200mVpp ∆R/R≤0.1% Cin=4.7µF Tamb = 25°C -20 CMRR (dB) CMRR (dB) -20 -40 -40 Vcc=5V, 3.6V, 2.5V Vcc=5V, 3.6V, 2.5V -60 -60 20 100 1000 Frequency (Hz) 20 10000 20k Figure 24. CMRR vs. frequency 10000 20k 1000 Frequency (Hz) 0 RL=8Ω + 15µH G=6dB ∆Vicm=200mVpp ∆R/R≤0.1% Cin=4.7µF Tamb = 25°C RL=8Ω + 30µH G=6dB ∆Vicm=200mVpp ∆R/R≤0.1% Cin=4.7µF Tamb = 25°C -20 CMRR (dB) CMRR (dB) -20 -40 Vcc=5V, 3.6V, 2.5V -40 Vcc=5V, 3.6V, 2.5V -60 -60 20 100 1000 Frequency (Hz) 20 10000 20k Figure 26. CMRR vs. frequency Figure 27. 0 100 10000 20k 1000 Frequency (Hz) CMRR vs. common mode input voltage -20 RL=8Ω + Filter G=6dB ∆Vicm=200mVpp ∆R/R≤0.1% Cin=4.7µF Tamb = 25°C -30 CMRR(dB) CMRR (dB) 100 Figure 25. CMRR vs. frequency 0 -20 RL=4Ω + Filter G=6dB ∆Vicm=200mVpp ∆R/R≤0.1% Cin=4.7µF Tamb = 25°C -40 Vcc=5V, 3.6V, 2.5V -40 ∆Vicm = 200mVpp F = 217Hz G = 6dB RL ≥ 4Ω + ≥ 15µH Tamb = 25°C Vcc=2.5V -50 Vcc=3.6V -60 -60 Vcc=5V 20 14/32 100 1000 Frequency (Hz) 10000 20k -70 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Common Mode Input Voltage (V) 4.5 5.0 TS4962M Electrical characteristic curves Figure 28. THD+N vs. output power Figure 29. THD+N vs. output power 10 10 RL = 4Ω + 30µH or Filter F = 100Hz G = 6dB BW < 30kHz Tamb = 25°C Vcc=5V Vcc=3.6V Vcc=2.5V THD + N (%) THD + N (%) RL = 4Ω + 15µH F = 100Hz G = 6dB BW < 30kHz Tamb = 25°C 1 1E-3 0.01 0.1 Output Power (W) 1 1 1E-3 3 Figure 30. THD+N vs. output power 0.01 0.1 Output Power (W) 1 3 Figure 31. THD+N vs. output power 10 10 RL = 8Ω + 15µH F = 100Hz G = 6dB BW < 30kHz Tamb = 25°C RL = 8Ω + 30µH or Filter F = 100Hz G = 6dB BW < 30kHz Tamb = 25°C Vcc=5V Vcc=3.6V THD + N (%) THD + N (%) Vcc=2.5V 0.1 0.1 Vcc=2.5V 1 Vcc=5V Vcc=3.6V Vcc=2.5V 1 0.1 0.1 1E-3 0.01 0.1 Output Power (W) 1 1E-3 2 Figure 32. THD+N vs. output power 0.01 0.1 Output Power (W) 1 2 Figure 33. THD+N vs. output power 10 10 RL = 4Ω + 15µH F = 1kHz G = 6dB BW < 30kHz Tamb = 25°C Vcc=3.6V Vcc=2.5V 1 0.1 1E-3 RL = 4Ω + 30µH or Filter F = 1kHz G = 6dB BW < 30kHz Tamb = 25°C Vcc=5V THD + N (%) THD + N (%) Vcc=5V Vcc=3.6V 0.01 0.1 Output Power (W) 1 3 Vcc=5V Vcc=3.6V Vcc=2.5V 1 0.1 1E-3 0.01 0.1 Output Power (W) 1 3 15/32 Electrical characteristic curves TS4962M Figure 34. THD+N vs. output power Figure 35. THD+N vs. output power 10 RL = 8Ω + 15µH F = 1kHz G = 6dB BW < 30kHz Tamb = 25°C Vcc=3.6V Vcc=2.5V 1 0.1 1E-3 0.01 0.1 Output Power (W) 1 0.01 0.1 Output Power (W) 1 2 10 RL=4Ω + 15µH G=6dB Bw < 30kHz Vcc=5V Tamb = 25°C 1 Po=0.75W 0.1 50 100 1000 Frequency (Hz) Po=1.5W 1 Po=0.75W 0.1 10000 20k Figure 38. THD+N vs. frequency 50 100 1000 Frequency (Hz) 10000 20k Figure 39. THD+N vs. frequency 10 10 RL=4Ω + 30µH or Filter G=6dB Bw < 30kHz Vcc=3.6V Tamb = 25°C Po=0.9W THD + N (%) RL=4Ω + 15µH G=6dB Bw < 30kHz Vcc=3.6V Tamb = 25°C RL=4Ω + 30µH or Filter G=6dB Bw < 30kHz Vcc=5V Tamb = 25°C Po=1.5W THD + N (%) THD + N (%) Vcc=3.6V Vcc=2.5V Figure 37. THD+N vs. frequency 10 1 Po=0.9W 1 Po=0.45W Po=0.45W 0.1 0.1 50 16/32 Vcc=5V 1 0.1 1E-3 2 Figure 36. THD+N vs. frequency THD + N (%) RL = 8Ω + 30µH or Filter F = 1kHz G = 6dB BW < 30kHz Tamb = 25°C Vcc=5V THD + N (%) THD + N (%) 10 100 1000 Frequency (Hz) 10000 20k 50 100 1000 Frequency (Hz) 10000 20k TS4962M Electrical characteristic curves Figure 40. THD+N vs. frequency Figure 41. THD+N vs. frequency 10 RL=4Ω + 15µH G=6dB Bw < 30kHz Vcc=2.5V Tamb = 25°C RL=4Ω + 30µH or Filter G=6dB Bw < 30kHz Vcc=2.5V Tamb = 25°C Po=0.4W THD + N (%) THD + N (%) 10 1 Po=0.4W 1 Po=0.2W Po=0.2W 0.1 0.1 1000 Frequency (Hz) 200 10000 20k Figure 42. THD+N vs. frequency 10000 20k 10 RL=8Ω + 15µH G=6dB Bw < 30kHz Vcc=5V Tamb = 25°C Po=0.9W 1 0.1 100 1000 Frequency (Hz) THD + N (%) 100 10000 20k RL=8Ω + 30µH or Filter G=6dB Bw < 30kHz Vcc=3.6V Tamb = 25°C Po=0.5W 1000 Frequency (Hz) Po=0.5W 1 0.1 Po=0.25W 50 1000 Frequency (Hz) 10 1 0.1 100 Figure 45. THD+N vs. frequency 10 RL=8Ω + 15µH G=6dB Bw < 30kHz Vcc=3.6V Tamb = 25°C Po=0.45W 50 10000 20k Figure 44. THD+N vs. frequency Po=0.9W 1 0.1 Po=0.45W 50 RL=8Ω + 30µH or Filter G=6dB Bw < 30kHz Vcc=5V Tamb = 25°C THD + N (%) THD + N (%) 1000 Frequency (Hz) Figure 43. THD+N vs. frequency 10 THD + N (%) 100 50 10000 20k Po=0.25W 50 100 1000 Frequency (Hz) 10000 20k 17/32 Electrical characteristic curves TS4962M Figure 46. THD+N vs. frequency Figure 47. THD+N vs. frequency 10 10 RL=8Ω + 30µH or Filter G=6dB Bw < 30kHz Vcc=2.5V Tamb = 25°C 1 Po=0.2W THD + N (%) THD + N (%) 1 RL=8Ω + 15µH G=6dB Bw < 30kHz Vcc=2.5V Tamb = 25°C 0.1 0.1 Po=0.1W 0.01 Po=0.1W 0.01 50 100 1000 Frequency (Hz) 10000 20k 8 8 6 6 Vcc=5V, 3.6V, 2.5V RL=4Ω + 15µH G=6dB Vin=500mVpp Cin=1µF Tamb = 25°C 2 0 20 100 20 100 1000 Frequency (Hz) 10000 20k 8 6 Differential Gain (dB) Differential Gain (dB) 10000 20k Figure 51. Gain vs. frequency 8 Vcc=5V, 3.6V, 2.5V 4 RL=4Ω + Filter G=6dB Vin=500mVpp Cin=1µF Tamb = 25°C 2 18/32 1000 Frequency (Hz) RL=4Ω + 30µH G=6dB Vin=500mVpp Cin=1µF Tamb = 25°C 2 10000 20k Figure 50. Gain vs. frequency 0 100 Vcc=5V, 3.6V, 2.5V 4 0 1000 Frequency (Hz) 50 Figure 49. Gain vs. frequency Differential Gain (dB) Differential Gain (dB) Figure 48. Gain vs. frequency 4 Po=0.2W 6 Vcc=5V, 3.6V, 2.5V 4 0 20 100 1000 Frequency (Hz) 10000 20k RL=8Ω + 15µH G=6dB Vin=500mVpp Cin=1µF Tamb = 25°C 2 20 100 1000 Frequency (Hz) 10000 20k TS4962M Electrical characteristic curves Figure 52. Gain vs. frequency Figure 53. Gain vs. frequency 8 6 Differential Gain (dB) Differential Gain (dB) 8 Vcc=5V, 3.6V, 2.5V 4 RL=8Ω + 30µH G=6dB Vin=500mVpp Cin=1µF Tamb = 25°C 2 0 20 100 1000 Frequency (Hz) 10000 20k Figure 54. Gain vs. frequency 6 Vcc=5V, 3.6V, 2.5V 4 RL=8Ω + Filter G=6dB Vin=500mVpp Cin=1µF Tamb = 25°C 2 0 20 100 1000 Frequency (Hz) 10000 20k Figure 55. Startup & shutdown time VCC = 5V, G = 6dB, Cin = 1µF (5ms/div) 8 Differential Gain (dB) Vo1 6 Vo2 Vcc=5V, 3.6V, 2.5V 4 Standby RL=No Load G=6dB Vin=500mVpp Cin=1µF Tamb = 25°C 2 0 20 100 Vo1-Vo2 1000 Frequency (Hz) 10000 20k Figure 57. Figure 56. Startup & shutdown time VCC = 3V, G = 6dB, Cin = 1µF (5ms/div) Vo1 Vo1 Vo2 Vo2 Startup & shutdown time VCC = 5V, G = 6dB, Cin = 100nF (5ms/div) Standby Standby Vo1-Vo2 Vo1-Vo2 19/32 Electrical characteristic curves Figure 58. Startup & shutdown time Figure 59. Startup & shutdown time VCC = 3V, G = 6dB, Cin = 100nF (5ms/div) VCC = 5V, G = 6dB, No Cin (5ms/div) Vo1 Vo1 Vo2 Vo2 Standby Standby Vo1-Vo2 Figure 60. Startup & shutdown time VCC = 3V, G = 6dB, No Cin (5ms/div) Vo1 Vo2 Standby Vo1-Vo2 20/32 TS4962M Vo1-Vo2 TS4962M Application Information 5 Application Information 5.1 Differential configuration principle The TS4962M is a monolithic fully-differential input/output class D power amplifier. The TS4962M also includes a common-mode feedback loop that controls the output bias value to average it at VCC/2 for any DC common mode input voltage. This allows the device to always have a maximum output voltage swing, and by consequence, maximize the output power. Moreover, as the load is connected differentially compared to a single-ended topology, the output is four times higher for the same power supply voltage. The advantages of a full-differential amplifier are: ● High PSRR (Power Supply Rejection Ratio). ● High common mode noise rejection. ● Virtually zero pop without additional circuitry, giving an faster start-up time compared to conventional single-ended input amplifiers. ● Easier interfacing with differential output audio DAC. ● No input coupling capacitors required thanks to common mode feedback loop. The main disadvantage is: ● 5.2 As the differential function is directly linked to external resistor mismatching, paying particular attention to this mismatching is mandatory in order to obtain the best performance from the amplifier. Gain in typical application schematic Typical differential applications are shown in Figure 1 on page 3. In the flat region of the frequency-response curve (no input coupling capacitor effect), the differential gain is expressed by the relation: + AV diff - 300 Out – Out = ------------------------------- = ---------+ R in In – In with Rin expressed in kΩ. For the remainder of this chapter, AVdiff will be referred to as AV for simplicity’s sake. Due to the tolerance of the internal 150kΩ feedback resistor, the differential gain will be in the range (no tolerance on Rin): 273 327 ---------- ≤ A V ≤ ---------diff R in R in 21/32 Application Information 5.3 TS4962M Common mode feedback loop limitations As explained previously, the common mode feedback loop allows the output DC bias voltage to be averaged at VCC/2 for any DC common mode bias input voltage. However, due to Vicm limitation in the input stage (see Table 2: Operating conditions on page 2), the common mode feedback loop can ensure its role only within a defined range. This range depends upon the values of VCC and Rin (Av). To have a good estimation of the Vicm value, we can apply this formula (no tolerance on Rin): V CC × R in + 2 × V IC × 150kΩ V icm = ---------------------------------------------------------------------------2 × ( R in + 150kΩ ) (V) with + - In + In V IC = --------------------2 (V) and the result of the calculation must be in the range: 0.5V ≤ V icm ≤ V CC – 0.8V Due to the +/-9% tolerance on the 150kΩ resistor, it’s also important to check Vicm in these conditions: V CC × R in + 2 × V IC × 136.5kΩ V CC × R in + 2 × V IC × 163.5kΩ --------------------------------------------------------------------------------- ≤ V icm ≤ -------------------------------------------------------------------------------2 × ( R in + 136.5kΩ ) 2 × ( R in + 163.5kΩ ) If the result of Vicm calculation is not in the previous range, input coupling capacitors must be used (with VCC from 2.4V to 2.5V, input coupling capacitors are mandatory). For example: With VCC = 3V, Rin = 150k and VIC = 2.5V, we found Vicm = 2V typically and this is lower than 3V - 0.8V = 2.2V. With 136.5kΩ we found 1.97V and with 163.5kΩ we have 2.02V. So, no input coupling capacitors are required. 5.4 Low frequency response If a low frequency bandwidth limitation is requested, it’s possible to use input coupling capacitors. In the low frequency region, Cin (input coupling capacitor) starts to have an effect. Cin forms, with Rin, a first order high-pass filter with a -3dB cut-off frequency: 1 F CL = -----------------------------------2π × R in × C in (Hz) So, for a desired cut-off frequency we can calculate Cin, 1 C in = -------------------------------------2π × R in × F CL with Rin in W and FCL in Hz. 22/32 (F) TS4962M 5.5 Application Information Decoupling of the circuit A power supply capacitor is needed to correctly bypass the TS4962M, referred to as CS. The TS4962M has a typical switching frequency at 250kHz and output fall and rise time about 5ns. Due to these very fast transients, careful decoupling is mandatory. A 1µF ceramic capacitor is enough, but it must be located very close to the TS4962M in order to avoid any extra parasitic inductance created an overly long track wire. These parasitic inductances introduce, in relation with dI/dt, overvoltage that decreases the global efficiency and may cause, if this parasitic inductance is too high, a TS4962M breakdown. In addition, even if a ceramic capacitor has an adequate high frequency ESR value, its current capability is also important. A 0603 size is a good compromise, particularly when 4Ω load is used. Another important parameter is the rated voltage of the capacitor. A 1µF/6.3V capacitor used at 5V, lose about 50% of its value. In fact at 5V power supply voltage, we have a decoupling value about 0.5µF instead of 1µF. As CS has particular influence on the THD+N in the medium, high frequency region, this capacitor variation becomes decisive. In addition, less decoupling means higher overshoot that can be problematic if they reach the power supply AMR value (6V). 5.6 Wake-up Time: tWU When the standby is released to set the device ON, there is a wait of about 5ms. The TS4962M has an internal digital delay that mutes the outputs and releases them after this time in order to avoid any pop noise. 5.7 Shutdown time When the standby command is set, the time required to put the two output stages into high impedance and to put the internal circuitry in shutdown mode, is about 5ms. This time is used to decrease the gain and avoid any pop noise during shutdown. 5.8 Consumption in shutdown mode Between the shutdown pin and GND there is an internal 300kΩ resistor. This resistor force the TS4962M to be in shutdown when the shutdown input is leaved floating. However, this resistor also introduces additional shutdown power consumption if the shutdown pin voltage is not 0V. Referring to Table 2: Operating conditions on page 2, with 0.4V shutdown voltage pin for example, we have 0.4V/300kΩ = 1.3µA in typical (0.4V/273kΩ = 1.46µA in maximum) to add to the shutdown current specified in the tables in Table 4 on page 4. 23/32 Application Information 5.9 TS4962M Single ended input configuration It's possible to use the TS4962M in a single-ended input configuration. However, input coupling capacitors are needed in this configuration. The following schematic shows a single ended input typical application. Vcc B1 Cs 1u B2 Vcc Ve C2 Stdby Cin 300k Standby Rin GND C1 A1 Internal Bias GND Out+ 150k C3 Output - InIn+ + H PWM Bridge SPEAKER Rin Cin A3 150k Out- Oscillator GND GND TS4962 B3 A2 GND All formulas are identical except for the gain with Rin in kΩ: AV sin gle Ve - = 300 = --------------------------------------+ R in Out – Out And, due to the internal resistor tolerance we have: 327 273 ---------- ≤ A V ≤ ---------sin gle R in R in In the event that multiple single-ended inputs are summed, it is important that the impedance on both TS4962M inputs (In- and In+) are equal. Vcc Vek Standby B1 C2 Stdby GND Ve1 Cin1 Rin1 C1 InIn+ A1 GND Ceq GND Cs 1u B2 Vcc Rink 300k Cink Internal Bias Out+ 150k GND C3 Output PWM + H Bridge SPEAKER Req A3 150k Out- Oscillator GND TS4962 A2 B3 GND 24/32 TS4962M Application Information We have following equations: + 300 300 Out – Out = V e1 × ------------- + … + V ek × ------------R ink R in1 (V) k C eq = C inj Σ Cinj j=1 1 = ---------------------------------------------------2×π×R ×F inj CLj (F) 1 R eq = -----------------k 1 ∑ --------Rinj j =1 In general, for mixed situations (single-ended and differential inputs) we must use the same rule: equalize impedance on both TS4962M inputs. 5.10 Output filter considerations The TS4962M is designed to operate without an output filter. However, due to very sharp transients on TS4962M output, EMI radiated emissions may cause some standard compliance issues. These EMI standard compliance issues can appear if the distance between the TS4962M outputs and loudspeaker terminal are long (typically more than 50mm, or 100mm in both directions, to the speaker terminals). As each PCB layout and internal equipment device are different for each configuration, it is difficult to provide a one-size-fits-all solution. However, to decrease the probability of EMI issues, there are several simple rules to follow: ● Reduce, as much as possible, the distance between the TS4962M output pins and the speaker terminals. ● Uses ground plane for “shielding” sensitive wire. ● Place, as close as possible to the TS4962M and in series with each output, a ferrite bead with a rated current at minimum 2A and impedance greater than 50Ω at frequencies >30MHz. If, after testing, these ferrite beads are not necessary, replace them by a shortcircuit. Murata BLM18EG221SN1 or BLM18EG121SN1 are possible examples. ● Allow a footprint to place, if necessary, a capacitor to short perturbations to ground (see following schematic). Ferrite chip bead To speaker From TS4962 output about 100pF Gnd In the case where distance between TS4962M's output and speaker terminals is high, it's possible to have low frequency EMI issues due to the fact that the typical operating frequency is 250kHz. In this configuration, utilization of the output filter represented in page 3 and close of the TS4962M is necessary. 25/32 Application Information 5.11 TS4962M Different examples with summed inputs Example 1: Dual differential inputs Vcc Standby B1 Cs 1u B2 Vcc C2 Stdby 300k R2 E2+ R1 C1 E1+ E1- A1 Internal Bias GND Out+ 150k C3 Output - InIn+ + H PWM Bridge SPEAKER R1 A3 150k E2R2 Out- Oscillator GND A2 B3 TS4962 GND With (Ri in kΩ): + - + - Out – Out- = 300 A V = --------------------------------------+ 1 R1 E1 – E1 300 Out – Out A V = ------------------------------- = ---------+ 2 R2 E2 – E2 V CC × R 1 × R 2 + 300 × ( V IC1 × R 2 + V IC2 × R 1 ) 0.5V ≤ --------------------------------------------------------------------------------------------------------------------------- ≤ V CC – 0.8V 300 × ( R 1 + R 2 ) + 2 × R 1 × R 2 + - + - E1 + E1 E2 + E2 and V IC = -----------------------V IC = -----------------------1 2 2 2 26/32 TS4962M Application Information Example 2: One differential input plus one single ended input Vcc Standby B1 Cs 1u B2 Vcc C2 Stdby 300k R2 E2+ C1 R1 E1+ C1 InIn+ E2- A1 Internal Bias C3 Output - H PWM + Bridge SPEAKER R2 A3 150k GND C1 GND Out+ 150k R1 Out- Oscillator GND A2 B3 TS4962 GND With (Ri in kΩ): + - + - – Out- = 300 A V = Out --------------------------------------+ 1 R1 E1 300 Out – Out A V = ------------------------------- = ---------+ 2 R2 E2 – E2 1 C 1 = -----------------------------------2π × R 1 × F CL (F) 27/32 Demoboard 6 TS4962M Demoboard A demoboard for the TS4962M is available with a the flip-chip adapter flip-chip to DIP. For more information about this demoboard, please refer to Application Note AN2134. Figure 61. Schematic diagram of mono class D demoboard for TS4962M Vcc Vcc Cn1 + J1 + 1 2 3 Cn2 GND GND C1 2.2uF/10V GND Vcc Cn4 + J2 3 8 U1 Vcc C2 300k 4 Stdby R1 Internal Bias Out+ 150k 6 Cn3 Positive Input Negative input 100nF 150k 100nF R2 C3 5 1 - InIn+ + Positive Output H Bridge PWM Negative Output 10 150k 150k Cn6 Output Out- Oscillator TS4962 Flip-Chip to DIP Adapter GND 2 Cn5 + J3 3 GND Pin3 pin8 Figure 62. Diagram for flip-chip-to-DIP adapter R1 + OR C1 100nF B1 B2 Vcc Pin5 Pin1 C2 Stdby 300k Pin4 C1 A1 Internal Bias Out+ 150k C3 Pin6 Output - InIn+ + H PWM Bridge A3 150k Pin10 Out- Oscillator GND A2 B3 R2 28/32 Pin9 Pin2 OR TS4962 C2 1uF TS4962M Demoboard Figure 63. Top view Figure 64. Bottom layer Figure 65. Top layer 29/32 Footprint recommendations 7 TS4962M Footprint recommendations Figure 66. Footprint recommendations 500µm 75µm min. 100µm max. 500µm Φ=400µm typ. Track 150µm min. Φ=340µm min. 500µm 500µm Φ=250µm Non Solder mask opening Pad in Cu 18µm with Flash NiAu (2-6µm, 0.2µm max.) 30/32 TS4962M 8 Package Mechanical Data Package Mechanical Data 9-bump flip-chip Figure 67. Pin-out for 9-bump flip-chip (top view) IN+ GND OUT- 1/A1 2/A2 3/A3 VDD VDD GND ■ Bumps are underneath 4/B1 5/B2 6/B3 ■ Bump diameter = 300µm IN- STBY OUT+ 8/C2 9/C3 7/C1 Figure 68. Marking for 9-bump flip-chip (top view) E XXX YWW ■ ST Logo ■ Symbol for lead-free: E ■ Two first XX product code: 62 ■ third X: Assembly code ■ Three digits date code: Y for year - WW for week ■ The dot is for marking pin A1 Figure 69. Mechanical data for 9-bump flip-chip 1.60 mm 1.60 mm 0.5mm 0.5mm ∅ 0.25mm ■ Die size: 1.6mm x 1.6mm ±30µm ■ Die height (including bumps): 600µm ■ Bump diameter: 315µm ±50µm ■ Bump diameter before reflow: 300µm ±10µm ■ Bump height: 250µm ±40µm ■ Die height: 350µm ±20µm ■ Pitch: 500µm ±50µm ■ Coplanarity: 50µm max 600µm 31/32 Revision History 9 TS4962M Revision History Date Revision Changes Oct. 2005 1 First Release corresponding to the product preview version. Nov. 2005 2 The following changes were made in this revision: – Table data updated for Output Voltage Noise condition see Table 4., Table 5., Table 6., Table 7., Table 8. andTable 9. – Formatting changes throughout. Dec. 2005 3 Product in full production. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 32/32