TIGER ELECTRONIC CO.,LTD Product specification 2SD1047 / 2SB817 Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Symbol Value Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 12 A Base Current IB 1.2 A Ptot 100 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-3PN O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO VCB=140V, IE=0 — — 10 uA Emitter Cut-off Current IEBO VEB=6V, IC=0 — — 10 uA Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0 140 — — V hFE1 VCE=5.0V, IC=1.0A 60 — 200 hFE2 VCE=5.0V, IC=6.0A 20 — — — — 2.5 V DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Collector Output Capacitance VCE(sat) IC=5.0A,IB=0.5A VBE VCE=5.0V,IC=1.0A — — 1.5 V fT VCE=5.0V,IC=1.0A — 15 — MHz COB Note : hfe1 Classification D: 60~120, E: 100~200 VCB=-10V, IE=0, f=1MHz 300 pF