TGS BDX53F

TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Darlington Ttransistors
BDX53F / BDX54F
DESCRIPTION
The BDX53F are silicon Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
They are intented for use in hammer drivers, audio amplifiers and
other medium power linear and switching applications.
The complementary PNP types are BDX54F respectively.
O
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
160
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
8.0
A
Base Current
IB
0.2
A
Ptot
60
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
150
-55~150
o
Tj
Tstg
W
o
C
TO-220
C
O
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off Current
ICBO
VCB=160V, IE=0
—
—
0.2
mA
Collector Cut-off Current
ICEO
VCE=80V, IB=0
—
—
0.5
mA
Emitter Cut-off Current
IEBO
VEB=5.0V, IC=0
—
—
2.0
mA
Collector-Emitter Sustaining Voltage
VCEO
IC=50mA, IB=0
160
—
—
V
VCE=5V, IC=2.0A
500
—
—
DC Current Gain
hFE
Collector-Emitter Saturation Voltage
VCE(sat) IC=2.0A,IB=10mA
—
—
2.0
V
Base-Emitter Saturation Voltage
VBE(sat) IC=2.0A,IB=10mA
—
—
2.5
V
—
—
2.5
V
Parallel-diode Forward Voltage
VF
IF=2A