S0808C1E WCFS0808C1E 32K x 8 Static RAM Features • High speed — 12 ns • Fast tDOE • CMOS for optimum speed/power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected Functional Description The WCFS0808C1E is a high-performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The WCFS0808C1E is in the standard SOJ package. An active LOW Write Enable signal (WE) controls the writing/reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O0 through I/O7) is written into the memory location addressed by the address present on the address pins (A0 through A14). Reading the device is accomplished by selecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins. The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and Write Enable (WE) is HIGH. A die coat is used to improve alpha immunity. Logic Block Diagram Pin Configurations SOJ Top View I/O0 INPUT BUFFER I/O1 ROW DECODER I/O2 SENSE AMPS A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 1024 x 32 x 8 ARRAY I/O3 I/O4 I/O5 CE WE POWER DOWN COLUMN DECODER I/O6 I/O7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A4 A3 A2 A1 OE A0 CE I/O7 I/O6 I/O5 I/O4 I/O3 A 14 A 12 A 13 A 11 A 10 OE A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 I/O0 I/O1 I/O2 GND Selection Guide Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current (mA) WCFS0808C1E 12ns 12 160 10 WCFS0808C1E 15ns 15 155 10 Revised February 18, 2002 WCFS0808C1E DC Voltage Applied to Outputs in High Z State[1] .................................... –0.5V to VCC + 0.5V Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential (Pin 28 to Pin 14) ........................................... –0.5V to +7.0V DC Input Voltage[1] ................................ –0.5V to VCC + 0.5V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current.................................................... >200 mA Operating Range Range Ambient Temperature[2] VCC 0°C to +70°C 5V ± 10% Commercial Electrical Characteristics Over the Operating Range[3] WCFS0808C1E 12ns Parameter Description Test Conditions Min. Max. VOH Output HIGH Voltage VCC = Min., IOH=–4.0 mA 2.4 VOL Output LOW Voltage VCC = Min., IOL=8.0 mA VIH Input HIGH Voltage 2.2 VCC +0.3V VIL Input LOW Voltage –0.5 IIX Input Load Current GND < VI < VCC IOZ Output Leakage Current GND < VO < VCC, Output Disabled ICC VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Com’l ISB1 Automatic CE Power-Down Current— TTL Inputs ISB2 Automatic CE Power-Down Current— CMOS Inputs WCFS0808C1E 15ns Min. Max. Unit 2.4 0.4 V 0.4 V 2.2 VCC +0.3V V 0.8 –0.5 0.8 V –5 +5 –5 +5 µA –5 +5 –5 +5 µA 160 155 mA Com’l Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX 30 30 mA Com’l Max. VCC, CE > VCC – 0.3V VIN > VCC – 0.3V or VIN < 0.3V, f = 0 10 10 mA ] Capacitance[1] Parameter CIN COUT Description Input Capacitance Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. 8 8 Unit pF pF Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the “instant on” case temperature. 3. See the last page of this specification for Group A subgroup testing information. 4. Tested initially and after any design or process changes that may affect these parameters. Page 2 of 10 WCFS0808C1E AC Test Loads and Waveforms[5] R1 481 Ω R1 481 Ω 5V 5V OUTPUT ALL INPUT PULSES OUTPUT 3.0V R2 255 Ω 30 pF INCLUDING JIG AND SCOPE 5 pF INCLUDING JIG AND SCOPE (a) Equivalent to: 10% R2 255 Ω 90% 10% 90% GND ≤tr ≤tr C199–5 (b) THÉVENIN EQUIVALENT 167 Ω OUTPUT 1.73V Data Retention Characteristics (Over the Operating Range) Parameter Description Conditions[6] VDR VCC for Data Retention tCDR[1] Chip Deselect to Data Retention Time VCC = VDR = 2.0V, CE > VCC – 0.3V, Operation Recovery Time VIN > VCC – 0.3V or VIN < 0.3V tR [5] Min. Max. Unit 2.0 V 0 ns 200 µs Data Retention Waveform DATA RETENTION MODE VCC 3.0V tCDR VDR > 2V 3.0V tR CE Note: 5. tR< 3 ns for the -12 and the -15 speeds. tR< 5 ns for the -20 and slower speeds 6. No input may exceed VCC + 0.5V. Page 3 of 10 WCFS0808C1E Switching Characteristics Over the Operating Range[3, 7] WCFS0808C1E 12ns Parameter Description Min. Max. WCFS0808C1E 15ns Min. Max. Unit READ CYCLE tRC Read Cycle Time tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid tDOE OE LOW to Data Valid tLZOE 12 [8] OE LOW to Low Z 12 OE HIGH to High Z tLZCE CE LOW to Low Z[8] tHZCE CE HIGH to High Z[8,9] tPU CE LOW to Power-Up tPD CE HIGH to Power-Down ns 15 ns 12 15 ns 5 7 ns 3 3 0 [8, 9] tHZOE 15 ns 0 5 3 ns 7 3 5 0 7 0 12 ns ns ns ns 15 ns WRITE CYCLE[10, 11] tWC Write Cycle Time 12 15 ns tSCE CE LOW to Write End 9 10 ns tAW Address Set-Up to Write End 9 10 ns tHA Address Hold from Write End 0 0 ns tSA Address Set-Up to Write Start 0 0 ns tPWE WE Pulse Width 8 9 ns tSD Data Set-Up to Write End 8 9 ns tHD Data Hold from Write End 0 0 ns tHZWE tLZWE WE LOW to High Z [9] [8] WE HIGH to Low Z 7 3 7 3 ns ns Notes: 7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 9. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Page 4 of 10 WCFS0808C1E Read Cycle No. 1[12, 13] tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID Read Cycle No. 2 [13, 14] tRC CE tACE OE tHZOE tHZCE tDOE DATA OUT tLZOE HIGH IMPEDANCE HIGH IMPEDANCE DATA VALID tLZCE VCC SUPPLY CURRENT tPD tPU ICC 50% 50% ISB Notes: 12. Device is continuously selected. OE, CE = VIL 13. .WE is HIGH for read cycle Page 5 of 10 WCFS0808C1E Write Cycle No. 1 (WE Controlled)[10, 15, 16] tWC ADDRESS CE tAW WE tHA tSA tPWE OE tSD tHD DATAIN VALID DATA I/O tHZOE Write Cycle No. 2 (CE Controlled)[10, 15, 16] tWC ADDRESS tSCE CE tSA tAW tHA WE tSD DATA I/O tHD DATA IN VALID Notes: 14. Address valid prior to or coincident with CE transition LOW. 15. Data I/O is high impedance if OE = VIH. 16. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state. Page 6 of 10 WCFS0808C1E Write Cycle No. 3 (WE Controlled OE LOW)[11, 16] tWC ADDRESS CE tAW tHA tSA WE tSD DATA I/O tHD DATAIN VALID tLZWE tHZWE NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4 NORMALIZED ICC,I SB 1.2 ICC 1.0 0.8 0.6 VIN =5.0V TA =25°C 0.4 0.2 1.2 1.0 0.8 0.6 VCC =5.0V VIN =5.0V 0.4 0.2 ISB 0.0 4.0 ICC 4.5 5.0 5.5 ISB 0.0 –55 6.0 1.6 1.4 NORMALIZED t AA 1.3 1.2 1.1 TA =25°C 1.0 1.4 1.2 1.0 VCC =5.0V 0.8 0.9 4.5 5.0 5.5 SUPPLY VOLTAGE (V) 120 100 80 VCC =5.0V TA =25°C 60 40 20 0 0.0 6.0 0.6 –55 25 125 AMBIENT TEMPERATURE (°C) 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE NORMALIZED t AA 125 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE AMBIENT TEMPERATURE (°C) SUPPLY VOLTAGE (V) 0.8 4.0 25 OUTPUT SINK CURRENT (mA) NORMALIZED ICC,I SB 1.4 OUTPUT SOURCE CURRENT (mA) Typical DC and AC Characteristics OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 140 120 100 80 60 VCC =5.0V TA =25°C 40 20 0 0.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) Page 7 of 10 WCFS0808C1E Typical DC and AC Characteristics (continued) TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 30.0 2.5 25.0 2.0 1.5 1.0 20.0 15.0 VCC =4.5V TA =25°C 10.0 1.00 VCC =5.0V TA =25°C VIN =0.5V 0.75 5.0 0.5 0.0 0.0 NORMALIZED I CC vs. CYCLE TIME 1.25 NORMALIZED I CC 3.0 DELTA t AA (ns) NORMALIZED I PO TYPICAL POWER-ON CURRENT vs. SUPPLY VOLTAGE 1.0 2.0 3.0 4.0 5.0 0.0 0 200 SUPPLY VOLTAGE (V) 400 600 800 1000 0.50 10 CAPACITANCE (pF) 20 30 40 CYCLE FREQUENCY (MHz) Truth Table CE WE OE Inputs/Outputs Mode Power H X X High Z Deselect/Power-Down Standby (ISB) L H L Data Out Read Active (ICC) L L X Data In Write Active (ICC) L H H High Z Deselect, Output Disabled Active (ICC) Ordering Information Speed (ns) 12 15 Ordering Code WCFS0808C1E-JC12 WCFS0808C1E-JC15 Package Name J J Package Type 28-Lead Molded SOJ 28-Lead Molded SOJ Operating Range Commercial Page 8 of 10 WCFS0808C1E Package Diagrams 28-Lead (300-Mil) Molded SOJ,J Page 9 of 10 WCFS0808C1E Document Title: WCFS0808C1E 32K x 8 Static RAM REV. Issue Date Orig. of Change Description of Change ** 4/16/2002 XFL New Datasheet Page 10 of 10