2SC4081 General Purpose Transistor NPN Silicon COLLECTOR 3 3 P b Lead(Pb)-Free 1 1 BASE 2 2 EMITTER FEATURES Excellent hFE linearity Complements the 2A1576A SOT-323(SC-70) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current -Continuous IC 150 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to +150 ℃ Parameter ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA,IC=0 7 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=7V,IC=0 0.1 μA DC current gain hFE(1) VCE=6V,IC=1mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking WEIT RON htt p://www. weit r o n.com.tw 120 560 IC=50mA,IB=5mA 0.4 VCE=12V,IC=2mA,f=30MHz VCB12V,IE=0,f=1MHz V 180 MHz 3.5 pF hFE(1) Q R S 120-270 180-390 270-560 BQ BR BS 1/3 10-Jul-08 WEITRON 2SC4081 WEIT R ON h tt p :// w w w . w eit r o n . c o m . tw 2/3 10-Jul-08 WEITRON 2SC4081 WEIT RON htt p://www. weit r o n.c om.tw 3/3 10-Jul-08