2SD1766 TRANSISTOR (NPN) FEATURES z Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) z Complements to 2SB1188 SOT-89 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 2. COLLECTOR 1 2 3. EMITTER 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 μA Emitter cut-off current IEBO VEB=4V, IC=0 1 μA DC current gain hFE(1) VCE=3V, IC=500mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking JinYu 390 IC=2A, IB=0.2A 0.8 V VCE=5V, IC=50mA, f=100MHz 100 MHz VCB=10V, IE=0, f=1MHz 30 pF hFE(1) P Q R 82-180 120-270 180-390 DBP DBQ DBR １ semiconductor 82 www.htsemi.com 2SD1766 ２ JinYu semiconductor www.htsemi.com