WTM5551 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER Features: 1 2 3 SOT-89 * Switching and amplification in high Voltage Applications such as Telephony. * Low Current(Max. 600mA) * High Voltage(Max. 180V) Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otheerwise Noted) Symbol Value Unit Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCEO 160 V Collector to Base Voltage VEBO 6 V Rating Collector Current IC 0.6 A Total Device Disspation TA=25°C PD 0.5 W RθJA 104 ˚C/W Junction Temperature Tj +150 ˚C Storage Temperature Tstg -65 to +150 ˚C Thermal Resistance WEITRON http://www.weitron.com.tw 1/4 18-Nov-05 WTM5551 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=100µA, IE=0 BVCBO 180 - - V Collector-Emitter Breakdown Voltage IC=1mA, IB=0 BVCEO 160 - - V Emitter-Base Breakdown Voltage IE=10µA, IC=0 BVEBO 6.0 - - V Collector Cut-Off Current VCB=120V, IE=0 ICBO - - 50 nA Emitter-Cut-Off Current VEB=4V, IC=0 IEBO - - 50 nA - ON CHARACTERISTICS DC Current Gain VCE=5V, IC=1mA VCE=5V, IC=-10mA VCE=5V, IC=50mA hFE(1) hFE(2) hFE(3) 80 80 30 - 250 - Collector-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA VCE(sat) - - 0.15 0.2 V Collector-Emitter Saturation Voltage IC=10mA, IB=1mA IC=50mA, IB=5mA VBE(sat) - - 1.0 1.0 V fT 100 - 300 MHz Output Capacitance VCB=10V, IE=0, f=1MHz Cob - - 6.0 pF Noise Figure VCE=5V, IC=0.2mA, f=10Hz to 15.7KHz, Rs=10Ω NF - - 8.0 dB DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, IC=10mA, f=100MHz DEVICE MARKING Marking WEITRON http://www.weitron.com.tw 1G6 2/4 18-Nov-05 WTM5551 12 70µA 10 150 TA=25°C DC CURRENT GAIN : hFE COLLECTOR CURRENT IC(mV) Typical Characteristic 60µA 50µA 8 40µA 6 30µA 4 20µA 10µA 2 0 0 5 10 15 20 25 30 35 40 VCE=5V 140 120 100 80 60 TA=25°C 1 45 10 100 COLLECTOR CURRENT : IC(A) COLLECTOR-EMITTER VOLTAGE VCE(V) Fig.2 DC current gain vs. collector current Fig.1 Collector current vs. Collector-emitter voltage COLLECTOR-EMITTER VOLTAGE VCE(V) 1.0 0.9 0.8 IC=1.0mA 10mA 30mA 100mA 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 BASE CURRENT : IB(mA) Fig.3 Collector-emitter voltage vs. Base current WEITRON http://www.weitron.com.tw 3/4 18-Nov-05 WTM5551 SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 4/4 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 18-Nov-05