WEITRON BCX53-10

BCX53
PNP Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS ( TA=25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current Continuous
IC
-1.0
A
Total Device Dissipation TA=25°C
PD
500
mW
Junction Temperature Range
TJ
+150
˚C
Storage Temperature Range
Tstg
-55 to +150
˚C
Device Marking
BCX53=AH , BCX53-10=AK , BCX53-16=AL
OFF CHARACTERISTICS
Characteristics
Symbol
Min
Collector-Base Breakdown Voltage, IC = -100µA, IE = 0
V(BR)CBO
-
-100
V
Collector-Emitter Breakdown Voltage, IC = -10mA, IB = 0
V(BR)CEO
-
-80
V
Emitter-Base Breakdown Voltage, IE = -10µA, IC = 0
V(BR)EBO
-
-5.0
V
Collector Cut-off Current, VCB = -30V, IE = 0
ICBO
-
-0.1
µA
Emitter Cut-off Current, VEB = -5.0V, IC = 0
IEBO
-
-0.1
µA
W E IT R O N
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Max
Unit
12-Oct-06
BCX53
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Symbol
Min
Typ
Max
hFE1
63
63
100
-
250
160
250
VCE = -2.0V, IC = -5.0mA
hFE2
63
-
-
VCE = -2.0V, IC = -500mA
hFE3
40
-
-
Collector-Emitter Saturation Voltage
IC = -500mA, IB = -50mA
VCE(sat)
-
-
-0.5
V
Base-Emitter Voltage
VCE = -2.0V, IC = -500mA
VBE(ON)
-
-
-1.0
V
fT
50
-
-
MHz
Characteristics
Unit
ON CHARACTERISTICS
DC Current Gain
VCE = -2.0V, IC = -150mA
BCX53
BCX53-10
BCX53-16
TransitionFrequence
VCE = -5V, IC = -10mA, f = 100MHz
WEITRON
http://www.weitron.com.tw
2/3
-
12-Oct-06
BCX53
SOT-89 Outline Dimensions
E
G
H
B
K
Dim
A
B
C
D
E
G
H
J
K
L
A
C
J
unit:mm
D
L
WEITRON
http://www.weitron.com.tw
3/3
SOT-89
Min
Max
1.600
1.400
0.520
0.320
0.560
0.360
0.440
0.350
4.600
4.400
1.800
1.400
2.600
2.300
4.250
3.940
1.500TYP
3.100
2.900
12-Oct-06