BCX53 PNP Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5.0 V Collector Current Continuous IC -1.0 A Total Device Dissipation TA=25°C PD 500 mW Junction Temperature Range TJ +150 ˚C Storage Temperature Range Tstg -55 to +150 ˚C Device Marking BCX53=AH , BCX53-10=AK , BCX53-16=AL OFF CHARACTERISTICS Characteristics Symbol Min Collector-Base Breakdown Voltage, IC = -100µA, IE = 0 V(BR)CBO - -100 V Collector-Emitter Breakdown Voltage, IC = -10mA, IB = 0 V(BR)CEO - -80 V Emitter-Base Breakdown Voltage, IE = -10µA, IC = 0 V(BR)EBO - -5.0 V Collector Cut-off Current, VCB = -30V, IE = 0 ICBO - -0.1 µA Emitter Cut-off Current, VEB = -5.0V, IC = 0 IEBO - -0.1 µA W E IT R O N h t t p : / / w w w . w e i t r o n . c o m . tw 1/3 Max Unit 12-Oct-06 BCX53 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Symbol Min Typ Max hFE1 63 63 100 - 250 160 250 VCE = -2.0V, IC = -5.0mA hFE2 63 - - VCE = -2.0V, IC = -500mA hFE3 40 - - Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA VCE(sat) - - -0.5 V Base-Emitter Voltage VCE = -2.0V, IC = -500mA VBE(ON) - - -1.0 V fT 50 - - MHz Characteristics Unit ON CHARACTERISTICS DC Current Gain VCE = -2.0V, IC = -150mA BCX53 BCX53-10 BCX53-16 TransitionFrequence VCE = -5V, IC = -10mA, f = 100MHz WEITRON http://www.weitron.com.tw 2/3 - 12-Oct-06 BCX53 SOT-89 Outline Dimensions E G H B K Dim A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 3/3 SOT-89 Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900 12-Oct-06