BC847S Dual General Purpose Transistor NPN Silicon 1 2 3 6 5 1 P b Lead(Pb)-Free 4 3 SOT -363(SC-88) 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Unit V V V mA Value 45 50 6 200 Symbol VCEO VCBO VEBO IC Thermal Characteristics Symbol Characteristics Max Unit Total Device Dissipation TA=25 C PD 200 mW Junction Temperature TJ +150 °C Storage Temperature Tstg -55 to +150 °C Device Marking BC847S=1C Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC=10mA , I B=0) V(BR)CEO 45 - V Collector-Base Breakdown Voltage (IC=10 µA ,IE=0) V(BR)CBO 50 - V Emitter-Base Breakdown Voltage (IE=10 µA , IC=0) V(BR)EBO 6 - V Off Characteristics WEITRON http://www.weitron.com.tw 1/3 05-Feb-07 BC847S Electrical Characteristics (T A=2 5 C unles s otherwis e noted) (Countinued) Max Symbol Min TYP hFE 110 - 630 - C ollector-Emitter Saturation Voltage ( I C= 10 mA , I B = 0.5mA ) ( I C= 100mA , I B = 5 mA ) VCE(sat) - - 0.25 0.65 V B ase-Emitter ( VCE = 5 V ( VCE = 5 V VBE(sat) - - 0.7 0.77 V fT - 200 - MHz Cobo - 2 - pF Characteristics Unit On Characteristics DC Current Gain ( I C= 2 mA , VCE = 5 V ) Saturation Voltage , IC = 2mA ) , IC =10 mA) Small-signal Characteristics Current-Gain-Bandwidth Product ( VCE = 5 V , IC = 20 mA , f=100MHz) Output Capacitance (VCB = 10 V , IE =0, f=1 MHz) WEITRON http://www.weitron.com.tw 2/3 05-Feb-07 BC847S SOT-363 Package Outline Dimensions Unit:m m A 6 5 SOT-363 4 B C 1 2 D 3 E H K J WEITRON http://www.weitron.com.tw L M 3/3 Dim A B C D E H J K L M M in M ax 0.10 0.30 1.15 1.35 2.00 2.20 0.65 R EF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 05-Feb-07