2SC3838 - Weitron

2SC3838
High-Frequency Amplifier Transistor
NPN Silicon
COLLECTOR
3
3
P b Lead(Pb)-Free
1
1
BASE
2
2
EMITTER
SOT-23
MAXIMUM RATINGS (Ta=25ºC)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
11
20
Unit
V
V
V
mA
3.0
50
THERMAL CHARACTERISTICS
Characteristics
Collector Power Dissipation
TA =25°C
Junction and Storage, Temperature
Symbol
PD
TJ, Tstg
Value
200
Unit
mW
-55 to +150
°C
Device Marking
2SC3838=AD
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage(I C =1mA)
BVCEO
11
-
V
Collector-Base Breakdown Voltage(I C =10µA )
BVCBO
20
-
V
Emitter-Base Breakdown Voltage(IE =10 µA)
BVEBO
3.0
-
V
Collector Cutoff Current(VCB =10V)
ICBO
-
0.5
µA
Emitter Cutoff Current(VEB =2V)
IEBO
-
0.5
µA
WEITRON
http://www.weitron.com.tw
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14-Mar-2013
2SC3838
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
Symbol
Characteristics
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain
VCE=10V ,IC= 5mA
hFE
56
-
180
-
Transition Frequency
VCE=10V ,IE = -10mA, f=500MHz
fT
1.4
3.2
-
GHz
VCE(sat)
-
-
0.5
V
Cob
-
0.8
1.5
pF
rbb`Cc
-
4
12
ps
NF
-
3.5
-
dB
Collector-Emitter Saturation Voltage
IC=10 mA, IB=5mA
Output Capacitance
VCB =10V, I E =0A, f=1MHz
Collector-Base Time Constant
VCB =10V, I C=10mA, f=31.8MHz
Noise Factor
VCE =6V, IC=2mA, f=500MHz, Rg=50Ω
WEITRON
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14-Mar-2013
2SC3838
SOT-23 Package OutlineDimensions
Unit:mm
A
B
TOP V I EW
E
G
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
H
K
J
WEITRON
http://www.weitron.com.tw
L
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
M
3/3
14-Mar-2013