2SC3838 High-Frequency Amplifier Transistor NPN Silicon COLLECTOR 3 3 P b Lead(Pb)-Free 1 1 BASE 2 2 EMITTER SOT-23 MAXIMUM RATINGS (Ta=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 11 20 Unit V V V mA 3.0 50 THERMAL CHARACTERISTICS Characteristics Collector Power Dissipation TA =25°C Junction and Storage, Temperature Symbol PD TJ, Tstg Value 200 Unit mW -55 to +150 °C Device Marking 2SC3838=AD ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage(I C =1mA) BVCEO 11 - V Collector-Base Breakdown Voltage(I C =10µA ) BVCBO 20 - V Emitter-Base Breakdown Voltage(IE =10 µA) BVEBO 3.0 - V Collector Cutoff Current(VCB =10V) ICBO - 0.5 µA Emitter Cutoff Current(VEB =2V) IEBO - 0.5 µA WEITRON http://www.weitron.com.tw 1/3 14-Mar-2013 2SC3838 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Symbol Characteristics Min TYP Max Unit ON CHARACTERISTICS DC Current Gain VCE=10V ,IC= 5mA hFE 56 - 180 - Transition Frequency VCE=10V ,IE = -10mA, f=500MHz fT 1.4 3.2 - GHz VCE(sat) - - 0.5 V Cob - 0.8 1.5 pF rbb`Cc - 4 12 ps NF - 3.5 - dB Collector-Emitter Saturation Voltage IC=10 mA, IB=5mA Output Capacitance VCB =10V, I E =0A, f=1MHz Collector-Base Time Constant VCB =10V, I C=10mA, f=31.8MHz Noise Factor VCE =6V, IC=2mA, f=500MHz, Rg=50Ω WEITRON http://www.weitron.com.tw 2/3 14-Mar-2013 2SC3838 SOT-23 Package OutlineDimensions Unit:mm A B TOP V I EW E G Dim A B C D E G H J K L M C D H K J WEITRON http://www.weitron.com.tw L Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 M 3/3 14-Mar-2013