WEITRON WTC2301_10

WTC2301
P-Channel Enhancement
Mode Power MOSFET
DRAIN CURRENT
3 DRAIN
-2.3 AMPERES
P b Lead(Pb)-Free
DRAIN SOURCE VOLTAGE
-20 VOLTAGE
1
GATE
2
Features:
SOURCE
3
*Super High Dense Cell Design For Low R DS(ON)
R DS(ON) <100mΩ@V GS =-4.5V
*Rugged and Reliable
*Simple Drive Requirement
*SOT-23 Package
1
2
SOT-23
Applications
*Power Management in Notebook Computer
*Portable Equipment
*Battery Powered System
Maximum Ratings(TA=25℃
Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current 3
ID
-2.3
A
I DM
-8
A
PD
0.9
0.57
W
Maximum Junction-ambient 3
R θJA
140
˚C /W
Maximum Junction-case
R θJC
100
˚C /W
Ambient Temperature
Ta
150
˚C
Case Temperature
Tc
150
˚C
Operating Junction Temperature Range
TJ
150
˚C
Storage Temperature Range
T stg
-55~+150
˚C
Pulsed Drain Current
1,2
Total Po wer Dis sipation(T A =25˚C)
(T A =75˚C)
Unit
V
Device Marking
WTC2301 = 01
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1/6
Rev.D 29-Mar-10
WTC2301
Electrical Characteristics (TA = 25℃
Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
V(BR)DSS
-20
-
-
Unit
Static
Drain-Source Breakdown Voltage
VGS =0,I D =-250μA
V
Gate-Source Threshold Voltage
VGS(Th)
-0.45
-
-0.95
I GSS
-
-
±100
nA
I DSS
-
-
-1
μA
R DS(o n)
-
69
83
100
150
mΩ
g fs
-
6.5
-
S
Input Capacitance
VGS =0V,VDS =-6V,f=1.0MHz
C iss
-
882.51
-
Output Capacitance
VGS =0V,VDS =-6V,f=1.0MHz
C oss
-
145.54
-
Reverse Transfer Capacitance
VGS =0V,VDS =-6V,f=1.0MHz
C rss
-
97.26
-
VDS =VGS ,I D =-250 μA
Gate-Source L eakage C urrent
VGS = ±8 V
Drain- Sou rce Leakage Current(Tj=25˚C)
VDS =-9.6V,V GS =0
Drain-Source On-Resistance 2
VGS =-4.5V,I D=-2.8A
VGS =-2.5V,I D=-2.0A
Forward Transconductance
VDS =-5.0 V, ID =-4.0A
Dynamic
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pF
Rev.D 29-Mar-10
WTC2301
Switching
Turn-on Delay Time 2
t d (on)
-
17.28
-
Rise Time
VDD=-6V,VGEN =-4.5V,I D=-1A,R L =6 Ω ,R G =6Ω
tr
-
3.73
-
Turn-off De lay Time
VDD=-6V,VGEN =-4.5V,I D=-1A,R L =6 Ω ,R G =6Ω
t d (off)
-
36.05
-
VDD=-6V,VGEN =-4.5V,I D=-1A,R L =6 Ω ,R G =6Ω
tf
-
6.19
-
Total Gate Charge 2
VDS =-6.0V,VGS =-4.5V,I D=-2.8A
Qg
-
15.23
-
Gate-Source C harge
VDS =-6.0V,VGS =-4.5V,I D=-2.8A
Q gs
-
5.49
-
Gate-Drain C hange
VDS =-6.0V,VGS =-4.5V,I D=-2.8A
Q gd
-
2.74
-
VSD
-
-0.8
- 1.2
V
IS
-
-
- 2.4
A
VDD=-6V,VGEN =-4.5V,I D=-1A,R L =6 Ω ,R G =6Ω
ns
Fall Time
nC
Source-Drain Diode Characteristics
Forward On Voltage 2
VGS =0V,IS =-0.75A, Tj=25 C
Continuous Source Current(Body Diode)
Note: 1. Pulse width limited by Max, junction temperature.
2. pulse width≦300μs, duty cycle≦2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad.
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3/6
Rev.D 29-Mar-10
WTC2301
Typical Electrical Characteristics
20
Vds=5V
16
25°C
Id , DRAIN CUR RENT(A)
Id DRAIN CURRENT(A )
18
14
12
10
8
6
4
2
0
18
14
Vgs=2V
12
10
8
6
Vgs=1.5V
4
2
0
0
0.5
1
1.5
2
Vgs, GA TE-TO-SOURCE VOLTAGE(V)
2.
5
0
0.5
Figure 1. Transfer Characteristics
0.5
0.45
0.4
0.35
Vgs=1.5V
0.3
0.25
0.2
Vgs=2V
0.15
0.1
0.05
Vgs=2.5V
0
0
1
2
3
4
5
Id- Drain curren t
6
7
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1.5
2
2.5
3
3.5
4
Vds ,DRAIN-TO-S OURCE VOLTA GE(V)
4.5
5
0.5
0.45
0.4
0.35
0.3
0.25
Id=3.5A
0.2
0.15
0.1
0.05
0
0
8
Figure 3. On–Resistance versus Drain Current
WEITRON
1
Figure 2. On–Region Characteristics
Rds(on) -On-Resista nce(Ω)
Rds(on) -On-Resistance(Ω)
Vgs=2.5V
25°C
16
2
4
6
Vgs-Gate-to- Source Voltag e(V)
8
Figure 4. On-Resistance vs. Gate-to-Source Voltage
4/6
Rev.D 29-Mar-10
WTC2301
Typical Electrical Characteristics
12
1800
1600
10
Ca pa ci ta nc e
1400
Vgs(V)
8
6
4
1200
Ciss
1000
800
600
Coss
400
2
200
Crss
0
0
0
5
10
15
20
25
0
30
1
2
3
Figure 5. Gate Charge
5
6
7
Figure 6. Capacitance
120
0
-0.1
100
-0.2
80
VGS(TH)(V)
Rd s( on ) (m R )
4
V ds
Qgs(nC)
VGS=-4.5V ID=2A
60
40
-0.3
-0.4
-0.5
-0.6
ID=250uA
-0.7
-0.8
20
-0.9
0
-50
0
50
100
-1
-50
150
o
Temp( C)
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50
100
150
Temp( o C)
Figure 8. Vth Vs.Junction Temperature
Figure 7. On-Resistance Vs.Junction Temperature
WEITRON
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5/6
Rev.D 29-Mar-10
WTC2301
SOT-23 Outline Dimension
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
A
B
TOP VIEW
C
D
E
G
H
K
J
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L
M
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Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
Rev.D 29-Mar-10