2N7002K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead(Pb)-Free 1 GATE DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE * * Gate Pretection Diode SOURCE 2 Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for all commercialindustrial applications. 3 1 2 SOT-23 Features: *Simple Drive Requirement *Small Package Outline Maximum Ratings(TA=25℃ Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage V DS 60 Gate-Source Voltage VG S ±20 Continuous Drain Current 3,V GS @10V(TA ID ,V GS @10V(TA Pulsed Drain Current 1, 2 Unit V 640 500 mA I DM 950 PD 1.38 W R θJA 90 ˚C/W Operating Junction Temperature Range TJ +150 ˚C Storage Temperature Range Tstg -55~+150 ˚C Gate−Source ESD Rating (HBM, Method 3015) ESD 2500 V Tota l Po wer Dis s ipation(T A =25˚C ) Maximum Junction-ambient 3 Device Marking 2N7002K = RK WEITRON http:www.weitron.com.tw 1/6 Rev.A 07-Aug-08 2N7002K Electrical Characteristics (TA = 25°C Unless otherwise noted) Characteristic Symbol Min Typ Max V (BR)DSS 60 - - Unit Static Drain-Source Breakdown Voltage V G S =0, ID =250μA V Gate-Source Threshold Voltage V DS =V G S , ID =250 μA Gate-Source Leakage Current V G S = ± 20 V V G S(Th) 1.0 - 3.0 IG S S - - ±10 - - 1 Drain-Source Leakage Current(Tj=25˚C) V DS =60V,VG S =0 μA IDS S Drain-Source Leakage Current(Tj=70˚C) µA - - 100 R DS(on) - - 2 4 Ω g fs - 600 - mS Input Capacitance VGS=0V, VDS=25V, f=1.0MHz Ciss - 32 50 Output Capacitance VGS=0V, VDS=25V, f=1.0MHz Coss - 8 - Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1.0MHz Crss - 6 - V DS =48V,V G S =0 Drain-Source On-Resistance V G S =10V,I D =500mA V G S =4.5V,I D =200mA Forward Transconductance V DS =10V, I D =600mA Dynamic WEITRON http:www.weitron.com.tw 2/6 pF 21-Nov-06 2N7002K Switching Turn-on Delay Time2 VDS=30V,VGS=10V,ID=600mA,RD=52Ω,RG=3.3Ω t d(on) - 12 - Rise Time VDS=30V,VGS=10V,ID=600mA,RD=52Ω,RG=3.3Ω tr - 10 - Turn-off Delay Time VDS=30V,VGS=10V,ID=600mA,RD=52Ω,RG=3.3Ω t d (off ) - 59 - Fall Time VDS=30V,VGS=10V,ID=600mA,RD=52Ω,RG=3.3Ω tf - 29 - Total Gate Charge2 VDS=50V,VGS=4.5V,ID=600mA Qg - 1 1.6 Gate-Source Charge VDS=50V,VGS=4.5V,ID=600mA Q gs - 0.5 - Gate-Drain Change VDS=50V,VGS=4.5V,ID=600mA Q gd - 0.5 - VSD - - 1.2 ns nC Source-Drain Diode Characteristics Forward On Voltage 2 VGS =0V, IS =200mA V Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad. WEITRON http:www.weitron.com.tw 3/6 21-Nov-06 2N7002K WEITRON http://www.weitron.com.tw 4/6 21-Nov-06 2N7002K WEITRON http://www.weitron.com.tw 5/6 21-Nov-06 2N7002K SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 6/6 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 21-Nov-06