WTC2305DS P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -3.5 AMPERES DRAIN SOURCE VOLTAGE -8 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <68m Ω@V GS =-4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package 1 2 SOT-23 Applications *Power Management in Notebook Computer *Portable Equipment *Battery Powered System Maximum Ratings(TA=25℃ Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage VDS -8 Gate-Source Voltage VGS ±8 ID -3.5 I DM -12 PD 225 mW TJ , Tstg -55~+150 ˚C Continuous Drain Current 3 ,(T A Pulsed Drain Current 1,2 Total Power Dissipation(T A =25˚C) Operating Junction and Storage Temperature Range Unit V A Device Marking WTC2305 = P5S WEITRON http://www.weitron.com.tw 1/4 24-Aug-09 WTC2305DS Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min V(BR)DSS -8 Typ Max - - Unit Static Drain-Source Breakdown Voltage VGS =0,I D =-250μA V Gate-Source Threshold Voltage VGS(Th) VDS =VGS ,I D =-250 μA Gate-Source Leakage C urrent VGS = ±8V Drain- Source Leakage Current(Tj=25˚C) VDS =-6.4V,V GS =0 -0.45 - -0.8 I GSS - - ±100 nA I DSS - - 1 μA R DS(o n) - 47 55 67 68 81 118 mΩ g fs - 8.5 - S I D(ON) -6 -3 - - A Drain-Source On-Resistance 2 VGS=-4.5V,ID=-3.5A VGS=-2.5V,ID=-3.0A VGS=-1.8V,ID=-2.0A Forward Transconductance VDS =-5.0V, ID =-3.5A On-State Drain Current2 VDS =-5V,V GS =-4.5V VDS =-5V,V GS =-2.5V Dynamic Turn-On Delay Time VDD = -4V, RL= 4Ω , ID = -1A, VGEN = -4.5V, RG = 6Ω td(on) 13 20 ns Turn-On Rise Time VDD = -4V, RL= 4Ω , ID = -1A, VGEN = -4.5V, RG = 6Ω tr 25 40 ns Turn-Off Delay Time VDD = -4V, RL= 4Ω , ID = -1A, VGEN = -4.5V, RG = 6Ω td(off) 55 80 ns Turn-Off Fall Time VDD = -4V, RL= 4Ω , ID = -1A, VGEN = -4.5V, RG = 6Ω tf 19 35 ns Input Capacitance VDS = -4V, VGS = 0V , f = 1.0 MHz Ciss 1245 pF Output Capacitance VDS = -4V, VGS = 0V , f = 1.0 MHz Coss 375 pF Reverse Transfer Capacitance VDS = -4V, VGS = 0V , f = 1.0 MHz Crss 210 pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = -1.6A, VGS = 0V IS -1.6 A VSD -1.2 V Note: 1. Pulse test: pulse width <= 300us, duty cycle<= 2% 2. Static parameters are based on package level with recommended wire-bonding 3. Guaranteed by design; not subject to production testing WEITRON http://www.weitron.com.tw 2/4 24-Aug-09 WTC2305DS Id DRAIN CURRENT(A) Id DRAIN CURRENT(A) TYPICAL ELECTRICAL CHARACTERISTICS Vds DRAIN-TO-SOURCE VOLTAGE(V) Figure 1. Transfer Characteristics Figure 2. On–Region Characteristics Rds(on) ON-RESISTANCE Rds(on) ON-RESISTANCE Vgs GATE-TO-SOURCE VOLTAGE(V) Id DRAIN CURRENT(A) Vgs GATE-TO-SOURCE VOLTAGE(V) Figure 3. On–Resistance versus Drain Current WEITRON http://www.weitron.com.tw Figure 4. On-Resistance vs. Gate-to-Source Voltage 3/5 24-Aug-09 WTC2305DS Figure 5. Gate Charge Figure 6. Capacitance Figure 7. On-Resistance Vs.Junction Temperature WEITRON http://www.weitron.com.tw 4/5 24-Aug-09 WTC2305DS SOT-23 Outline Dimension SOT-23 Dim A B C D E G H J K L M A B TOP VIEW C D E G H K J WEITRON http://www.weitron.com.tw L M 5/5 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 24-Aug-09