WTC2302 N-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 2.3 AMPERES 3 DRAIN P b Lead(Pb)-Free DRAIN SOUCE VOLTAGE 20 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V *Rugged and Reliable *Simple Drive Requirement *SOT-23 Package Maximum Ratings(TA=25℃ 1 2 SOT-23 Unless Otherwise Specified) Rating Symbol Value Drain-Source Voltage V DS 20 Gate-Source Voltage VG S ±8 ID 2.3 A Pulsed Drain Current 1, 2 IDM 8 A Total Power Dissipation (TA =25°C ) PD 0.9 W R θJA 145 °C /W -55~+150 °C Continuous Drain Current 3 (T A Maximum Junction-ambient 3 Operating Junction and Storage Temperature Range T J , T s tg Unit V Device Marking WTC2302 = N02 WEITRON http://www.weitron.com.tw 1/6 Rev.B 24-Aug-09 WTC2302 Electrical Characteristics (TA = 25℃ Unless otherwise noted) Characteristic Symbol Min Typ Max V(BR)DSS 20 - - Unit Static Drain-Source Breakdown Voltage VGS=0,ID=-10μA V Gate-Source Threshold Voltage VDS=VGS,ID=250μA Gate-Source Leakage Current VGS= ±8V Drain-Source Leakage Current(Tj=25℃) VDS=9.6V,VGS=0 VGS(Th) 0.6 - 1.2 IGSS - - ±100 nA IDSS - - -1 μA - 40 50 60 115 mΩ gfs - 6.5 - S Ciss - 427.12 - Coss - 80.56 - Crss - 57 - Drain-Source On-Resistance RDS(on) VGS=4.5V,ID=2.8A VGS=2.5V,ID=2.0A Forward Transconductance VDS=5V,ID=4.0A Dynamic Input Capacitance VGS=0V,VDS=6V,f=1.0MHz Output Capacitance VGS=0V,VDS=6V,f=1.0MHz Reverse Transfer Capacitance VGS=0V,VDS=6V,f=1.0MHz WEITRON http://www.weitron.com.tw 2/6 pF Rev.B 24-Aug-09 WTC2302 Switching Turn-on Delay Time2 td(on) - 6.16 - Rise Time VDD=6V,VGEN =4.5V,I D =1.0A,RL =6Ω,RG=6Ω tr - 7.56 - Turn-off Delay Time VDD=6V,VGEN =4.5V,I D =1.0A,RL =6Ω,RG=6Ω td (off) - 16.61 - Fall Time VDD=6V,VGEN =4.5V,I D =1.0A,RL =6Ω,RG=6Ω tf - 4.07 - Qg - 3.69 - Gate-Source Charge VDS=6V,VGS=4.5V,ID=2.8A Qgs - 0.7 - Gate-Drain Change VDS=6V,VGS=4.5V,ID=2.8A Qgd - 1.06 - VSD - - 1.2 V IS - - 1.6 A VDD=6V,VGEN =4.5V,I D =1.0A,RL =6Ω,RG=6Ω ns Total Gate Charge2 VDS=6V,VGS=4.5V,ID=2.8A nC Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=-1.6A Continuous Source Current(Body Diode) Note: 1. Pulse width limited by Max, junction temperature. 2. pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on min, copper pad. WEITRON http://www.weitron.com.tw 3/6 Rev.B 24-Aug-09 WTC2302 TYPICAL ELECTRICAL CHARACTERISTICS 20 Vds=5V 14 Id , DRA IN CU RR EN T(A ) Id DR AIN C URR EN T( A) 16 25°C 12 10 8 6 4 2 0 18 25°C 14 12 Vgs=2V 10 8 6 Vgs=1.5V 4 2 0 0 0.5 1 1.5 2 Vg s, G ATE -T O- SOU RC E VOL TA GE (V) 2.5 0 0.5 Figure 1. Transfer Characteristics 500 450 400 350 300 250 200 150 100 50 0 1 1.5 2 2.5 3 3.5 4 Vd s, DR AIN -T O- SOU RC E V OL TA GE( V) 4.5 5 Figure 2. On–Region Characteristics 350 Rds-On-Resistance(mR) rDS(on)-On-Resistance(mR) Vgs=2.5V 16 VGS=1.8V VGS=2.5V VGS=4.5V 0 1 2 3 4 5 ID-Drain Current(A) 6 7 http://www.weitron.com.tw 250 200 150 ID=3.5A 100 50 0 8 0 1 2 3 4 5 6 7 8 Vgs-Gate-to-Source Voltage(V) Figure 3. On–Resistance versus Drain Current WEITRON 300 Figure 4. On-Resistance vs. Gate-to-Source Voltage 4/6 Rev.B 24-Aug-08 WTC2302 TYPICAL ELECTRICAL CHARACTERISTICS 700 10 600 Capacita nce 12 Vgs(V) 8 6 4 2 Ciss 500 400 300 Coss 200 Crss 100 0 0 0 2 4 6 Qgs(nC) 8 10 0 12 1 2 4 5 6 Figure 6. Capacitance Figure 5. Gate Charge 70 1.2 60 1 ID=250uA 50 40 Vgs(th)(V) Rds(on)(mR) 3 Vd s VGS=4.5V ID=2A 30 20 0.8 0.6 0.4 0.2 10 0 -50 0 -50 0 50 Temp(ºC) 100 150 http://www.weitron.com.tw 50 Temp(ºC) 100 150 Figure 8. Vth Vs.Junction Temperature Figure 7. On-Resistance Vs.Junction Temperature WEITRON 0 5/6 Rev.B 24-Aug-09 WTC2302 SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 6/6 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 Rev.B 24-Aug-09