WTK9410 8 D S 7 D S 2 P b Lead(Pb)-Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON) RDS(ON)<5.5mΩ@VGS=10V RDS(ON)<6.2mΩ@VGS=4.5V RDS(ON)<8.0mΩ@VGS=2.5V * Rugged and Reliable. * SOP-8 Package. 1 SOP-8 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unite Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V ID 18 15 A Pulsed Drain Current(2) IDM 80 A Power Dissipation(TA =25°C) PD 2.5 W RθJA 50 °C/W Junction Temperature Range TJ +150 °C Storage Temperature Range Tstg -55 to +150 °C Continuous Drain Current(1) (TA =25°C) (TA =70°C) Maximax Junction-to-Ambient(1) Device Marking WTK9410 = 9410SC WEITRON http://www.weitron.com.tw 1/6 12-Mar-07 WTK9410 Electrical Characteristics (TA=25°C Unless otherwise noted) Static (2) Characteristic Symbol Min Typ Max Unit - - V 1.2 V Drain-Source Breakdown Voltage VGS=0V, ID=250µA V(BR)DSS 30 Gate-Source Threshold Voltage VDS=VGS, ID=250µA VGS(th) - Gate-Source Leakage Current VDS=0V, VGS=±12V IGSS - - ±100 nA Drain-Source Leakage Current @Tj=25C, VDS=30V,VGS=0V @Tj=70C, VDS=24V,VGS=0V IDSS - - 1 25 µA Drain-Source On-Resistance3 VGS=10V, ID=18A VGS=4.5V, ID=12A VGS=2.5V, ID=6A rDS(on) - - 5.5 6.2 8.0 mΩ Forward Transconductance VDS=10V, ID=12A gfs - 47 - S Input Capacitance VDS=25V,VGS=0V, f=1.0MHZ Ciss - 5080 8100 Output Capacitance VDS=25V,VGS=0V, f=1.0MHZ Coss - 660 - Reverse Transfer Capacitance VDS=25V,VGS=0V, f=1.0MHZ Crss - 400 - - Dynamic (3) WEITRON http://www.weitron.com.tw 2/6 pF 12-Mar-07 WTK9410 Electrical Characteristics (TA=25°C Unless otherwise noted) Symbol Min Typ Max Turn-On Delay Time VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω Td(on) - 16 - Rise Time VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω Tr - 12 - Turn-Off Time VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω Td(off) - 96 - Fall Time VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω Tf - 30 - Total Gate Charge3 VDS=24V, VGS=4.5V, ID=18A Qg - 59 95 Gate-Source Charge VDS=24V, VGS=4.5V, ID=18A Qgs - 10 - Gate-Drain Charge VDS=24V, VGS=4.5V, ID=18A Qgd - 23 - Characteristic Unit Switching nS nC Source-Drain Diode Characteristics Forward On Voltage3 VGS=0V,IS=18A VSD - - 1.2 V Reverse Recovery Time3 VGS=0V,IS=18A, dl/dt=100A/μs Trr - 43 - nS Reverse Recovery Charge VGS=0V,IS=18A, dl/dt=100A/μs Qrr - 39 - nC Note: 1. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad. 2. Pulse width limited by Max. junction temperature. 3. Pulse width ≤ 300us, duty cycle ≤ 2%. WEITRON http://www.weitron.com.tw 3/6 12-Mar-07 WTK9410 WEITRON http://www.weitron.com.tw WEITRON 4/6 12-Mar-07 WTK9410 WEITRON http://www.weitron.com.tw WEITRON 5/6 12-Mar-07 WTK9410 WEITRON SOP-8 Package Outline Dimensions Unit:mm 1 L θ E1 D 7(4X) e B A1 2A A C 7 (4X) eB SYMBOLS A A1 B C D E1 eB e L θ WEITRON http://www.weitron.com.tw MILLIMETERS MAX MIN 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27BSC 0.60 0.80 0° 8° 6/6 12-Mar-07