WT-208DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge(ESD) protection application 1-2 T ation applies to N/P/N-Type silicon Zener diode chip(Vertical) Device NO:WT-208DV06 2. Structure: 2-1. Planar type : Silicon Diode. 2-2. Electrodes : Top side : Aluminum Alloy.(Cathode). Back side : Gold Layer(Cathode). 3. Size: 3-1. 3-2. 3-3. 3-4. Chip size : 8.5 mils x 8.5 mils (215 µm x 215 µm ). Chip thickness : 4.0 ± 1.0 mils (100 ± 25.4 µm ). Bonding pad : 5.7 mils x 5.7 mils (145 µm x 145 µm) . Pattern drawing : Refer to the attached drawing. 4. Electrical Characteristics (Ta=25 C) Parameter Leakage Current Zener Voltage Electrostatic Discharge Symbol Condition Min. Typ. Max. Unit IR VR=4V VR=5V - - 100 500 nA 5.5 - 7.2 5.3 - 7.2 8.0 - - Vzf(Forward) Vzr(Reverse) ESD Iz =5mA HBM MIL-STD 883 V KV Note: 1. Parallel with one LED 2. Single pad (one wire bonding applied only) 3. Double direction Zener diode protection 5. Drawing: 6. Protection Circuit: Bonding pad Top side (Top View) LED N P Protection Zener N Back Side Bonding pad WEITRON TECHNOLOGY CO., LTD. TEL:886-2-29148158 FAX:886-2-29106796 Http://www.weitron.com.tw * The yield is high up to 98%. Rev.E 24-Dec-09