APTGF30H60T3G Full - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 19 Q2 22 7 23 8 CR2 26 Q3 11 10 CR4 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Q4 4 27 3 29 31 30 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 42 30 100 ±20 140 Tj = 125°C 60A@500V TC = 25°C TC = 80°C TC = 25°C Unit V July, 2006 CR3 CR1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF30H60T3G – Rev 1 Q1 18 VCES = 600V IC = 30A @ Tc = 80°C APTGF30H60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Tj = 25°C Tj = 125°C T VGE =15V j = 25°C IC = 30A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20V, VCE = 0V Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Min Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge 250 500 2.45 VR=600V IF = 15A VR = 400V di/dt =200A/µs www.microsemi.com µA V V nA Max Unit pF nC ns 32 12 90 ns 21 0.3 mJ 0.8 Typ Max Unit V Tj = 25°C Tj = 125°C Tc = 80°C IF = 15A IF = 30A IF = 15A Unit 6 400 600 DC Forward Current Diode Forward Voltage Typ 1350 193 120 99 10 60 30 12 80 Max 15 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 2.0 2.2 4 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 30A R G = 6.8Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 30A R G = 6.8Ω VGE = 15V Tj = 125°C VBus = 400V IC = 30A Tj = 125°C R G = 6.8Ω Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 1.7 VGE = 15V VBus = 300V IC =30A Fall Time Tf Typ VGE = 0V VCE = 600V Zero Gate Voltage Collector Current VCE(on) Min 150 500 Tj = 125°C 15 1.6 1.9 1.4 Tj = 25°C 40 Tj = 125°C Tj = 25°C 150 95 Tj = 125°C 520 µA A 1.8 V July, 2006 ICES Test Conditions ns nC 2-6 APTGF30H60T3G – Rev 1 Symbol Characteristic APTGF30H60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.9 2.0 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF30H60T3G – Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTGF30H60T3G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 100 250µs Pulse Test < 0.5% Duty cycle T J=-55°C Ic, Collector Current (A) 90 TJ=25°C 60 TJ=125°C 30 0 250µs Pulse Test < 0.5% Duty cycle TJ =25°C 50 25 TJ =125°C 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 75 50 25 TJ=125°C T J=25°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 6 Ic=60A 5 4 3 Ic=30A 2 1 Ic=15A 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) VCE=300V 12 VCE=480V 10 8 6 4 2 0 0 20 40 60 80 100 120 Gate Charge (nC) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 14 10 On state Voltage vs Gate to Emitter Volt. 8 VCE=120V IC = 30A T J = 25°C 16 On state Voltage vs Junction Temperature 4 3.5 Ic=60A 3 2.5 Ic=30A 2 1.5 Ic=15A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 16 -50 Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 60 Ic, DC Collector Current (A) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 50 40 30 July, 2006 VCE, Collector to Emitter Voltage (V) 0 T J=-55°C VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 4 Gate Charge 18 100 Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 75 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 4-6 APTGF30H60T3G – Rev 1 Ic, Collector Current (A) 120 APTGF30H60T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 50 40 VGE = 15V 30 Tj = 125°C V CE = 400V R G = 6.8Ω 20 10 0 10 20 30 40 50 60 125 100 VGE=15V, TJ=125°C V GE=15V, TJ=25°C 75 50 VCE = 400V RG = 6.8Ω 25 70 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current V CE = 400V RG = 6.8Ω 30 40 50 60 70 40 30 20 20 Current Fall Time vs Collector Current 50 tf, Fall Time (ns) tr, Rise Time (ns) 50 40 10 ICE, Collector to Emitter Current (A) V GE=15V, TJ=125°C 30 TJ = 125°C 20 TJ = 25°C 10 10 0 0 V CE = 400V, V GE = 15V, RG = 6.8Ω 0 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) TJ=125°C, V GE=15V 0.5 0.25 0 0 10 20 30 40 50 60 2 V CE = 400V V GE = 15V RG = 6.8Ω 1.5 TJ = 125°C 1 0.5 0 70 0 ICE, Collector to Emitter Current (A) 10 20 30 40 50 60 70 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 1 70 0.75 Eon, 30A 0.5 VCE = 400V VGE = 15V TJ= 125°C 0.25 60 50 40 30 20 July, 2006 Eoff, 30A IC , Collector Current (A) Switching Energy Losses (mJ) 70 10 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 100 200 300 400 500 600 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APTGF30H60T3G – Rev 1 Eon, Turn-On Energy Loss (mJ) 0.75 10 20 30 40 50 60 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 1 V CE = 400V RG = 6.8Ω 0 70 APTGF30H60T3G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 280 VCE = 400V D = 50% R G = 6.8Ω 240 200 TJ = 125°C TC= 75°C 160 120 hard switching 40 0 0 50 ZCS ZVS 80 VCE, Collector to Emitter Voltage (V) 10 20 30 40 50 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.7 0.6 0.5 0.4 0.3 0.9 0.7 0.5 0.3 0.2 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 July, 2006 0.9 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF30H60T3G – Rev 1 Thermal Impedance (°C/W) 1