AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AOL1401 is Pbfree (meets ROHS & Sony 259 specifications). AOL1401L is a Green Product ordering option. AOL1401 and AOL1401L are electrically identical. Ultra SO-8TM Top View VDS (V) = -38V ID = -85A RDS(ON) < 8.5mΩ (VGS = -10V) RDS(ON) < 10mΩ (VGS = -4.5V) ESD Rating: 3000V HBM Fits SOIC8 footprint ! D D Bottom tab connected to drain G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current G ID IDM C A -120 -9 IDSM 100 PD TC=100°C Junction and Storage Temperature Range 2.1 W 1.3 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Alpha & Omega Semiconductor, Ltd. V -12 TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B ±25 -62 TA=25°C TA=25°C Power Dissipation A Units V -85 TC=100°C TC=25°C Power Dissipation B Maximum -38 RθJA RθJC Typ 21 48 1 Max 25 60 1.5 Units °C/W °C/W °C/W AOL1401 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-30V, VGS=0V -38 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VGS=-10V, ID=-20A VDS=-5V, ID=-20A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Typ Max -2.2 -100 -500 ±1 ±10 -3.5 V TJ=55°C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-20A -1.5 -120 TJ=125°C VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, ID=-20A VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω IF=-20A, dI/dt=100A/µs IF=-20A, dI/dt=100A/µs Units 6.8 9.1 7.9 50 0.71 8.5 11 10 -1 14.5 nA µA µA V A mΩ mΩ S V A 3800 560 350 7.5 4560 61.2 30.8 11.88 15.4 13.5 17 97 43 30 29 74 37 nC nC nC nC ns ns ns ns 36 ns nC 9 pF pF pF Ω A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. Rev 0: September 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOL1401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 -14V -10V VDS=-5V 25 90 20 -4.5V -ID(A) -ID (A) -6V 60 125°C 15 10 -4V 25°C 30 5 Vgs=-3.5V 0 0 0 1 2 3 4 5 2 2.5 9 3.5 4 4.5 5 1.8 Normalized On-Resistance RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-10V 8 7 VGS=-20V 6 1.6 VGS=-20V ID=-20A 1.4 1.2 VGS=-10V ID=-20A 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+01 ID=-20A 1.0E+00 25 -IS (A) RDS(ON) (mΩ) 1.0E-01 20 125°C 15 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 10 25°C 1.0E-05 5 1.0E-06 0 0.0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 4.9 6 1.0 AOL1401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 4000 Capacitance (pF) -VGS (Volts) Ciss VDS=-20V ID=-20A 8 6 4 2 3000 2000 Coss Crss 1000 0 0 0 10 20 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 1000.0 TJ(Max)=175°C, T A=25°C 100µs 1ms 10.0 10ms 1.0 DC 100m 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TA=25°C 600 400 200 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note B) -VDS (Volts) ZθJC Normalized Transient Thermal Resistance 800 10µs RDS(ON) limited Power (W) -ID (Amps) 100.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=T on/T TJ,PK=T C+PDM.ZθJC.RθJC RθJC=1.5°C/W 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4.9 Alpha & Omega Semiconductor, Ltd. 6 100 AOL1401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 120 Power (W) Power Dissipation (W) 50 90 60 40 30 TA=25°C 20 30 10 0 0 25 50 75 100 125 150 0 0.01 175 TCASE (°C) Figure 12: Power De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-toAmbient (Note H) Current rating -ID(A) 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 100 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 0.001 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 4.9 Alpha & Omega Semiconductor, Ltd. 6 1000