AOSMD AON4407L

AON4407L
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON4407L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch.
VDS (V) = -12V
ID = -9 A
(VGS = -4.5V)
RDS(ON) < 20mΩ (VGS = -4.5V)
RDS(ON) < 25mΩ (VGS = -2.5V)
RDS(ON) < 31mΩ (VGS = -1.8V)
-RoHS Compliant
-Halogen Free
ESD Protected!
D
DFN 3x2
Top View
Bottom View
Pin 1
D
D
D
D
D
D
G
S
Rg
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation B
C
TA=25°C
Junction and Storage Temperature Range
t ≤ 10s
Steady State
Steady State
Alpha & Omega Semiconductor, Ltd.
A
-60
2.5
W
1.6
TJ, TSTG
Symbol
AD
V
-7
PD
TA=70°C
A
±8
-9
ID
IDM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
-12
Units
V
Maximum
RθJA
RθJL
-55 to 150
Typ
42
74
25
Max
50
90
30
°C
Units
°C/W
°C/W
°C/W
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AON4407L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-12
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.35
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-60
TJ=55°C
VGS=-4.5V, ID=-9A
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
-0.85
V
A
20
25
mΩ
VGS=-1.8V, ID=-7.5A
24
31
mΩ
VGS=-1.5V, ID=-7A
29
38
mΩ
-1
V
-2.5
A
2100
pF
VDS=-5V, ID=-9A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance
µA
VGS=-2.5V, ID=-8.5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Crss
±10
20
Forward Transconductance
Output Capacitance
-0.5
µA
26
gFS
Coss
-5
22
VSD
IS
Units
16.5
TJ=125°C
Static Drain-Source On-Resistance
Max
V
VDS=-12V, VGS=0V
IDSS
RDS(ON)
Typ
45
-0.53
1740
VGS=0V, VDS=-6V, f=1MHz
mΩ
S
334
pF
200
VGS=0V, VDS=0V, f=1MHz
1.3
1.7
pF
kΩ
19
23
nC
VGS=-4.5V, VDS=-6V, ID=-9A
4.5
nC
Qgd
Gate Drain Charge
5.3
nC
tD(on)
Turn-On DelayTime
240
ns
tr
Turn-On Rise Time
580
7
ns
µs
4.2
µs
VGS=-4.5V, VDS=-6V, RL=0.67Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-9A, dI/dt=100A/µs
22
Qrr
Body Diode Reverse Recovery Charge IF=-9A, dI/dt=100A/µs
17
27
ns
nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board
with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0: Aug 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON4407L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
-4.5V
50
-2.5V
40
40
-2V
-ID(A)
-ID (A)
VDS=-5V
50
-3V
30
30
20
20
VGS=-1.5V
10
125°C
10
25°C
0
0
0
1
2
3
4
0
5
45
1
1.5
2
2.5
3
35
VGS=-2.5V
30
VGS=-1.8V
25
20
15
Normalized On-Resistance
1.6
VGS=-1.5V
40
RDS(ON) (mΩ)
0.5
-VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
VGS=-4.5V
10
0
2
4
6
8
10
1.5
VGS=-4.5V
ID=-9A
1.4
1.3
1.2
VGS=-1.8V
ID=-7.5A
1.1
1.0
VGS=-1.5V
ID=-7A
0.9
0.8
I12
dI/dt=100A/µs
14 16
18 20
F=-6.5A,
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage(Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
1E+01
50
ID=-9A
45
1E+00
1E-01
35
125°C
-IS (A)
RDS(ON) (mΩ)
40
30
1E-02
125°C
25°C
25
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER
1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL
20
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04 THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF 15
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10
1E-05
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
Alpha & Omega Semiconductor, Ltd.
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
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AON4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
4.5
VDS=-6V
ID=-9A
4
2400
-VGS (Volts)
3
2.5
2
1.5
Ciss
2000
Capacitance (pF)
3.5
1600
1200
Coss
800
1
0.5
400
0
0
Crss
0
4
8
12
16
20
0
2
-Qg (nC)
Figure 7: Gate-Charge Characteristics
4
6
10µs
RDS(ON)
limited
1
100mss
DC
0.1
Power (W)
-ID (Amps)
12
TJ(Max)=150°C
TA=25°C
1ms
10ms
10s
TJ(Max)=150°C
TA=25°C
0.01
0.01
0.1
I =-6.5A,
dI/dt=100A/µs
10
100
F
1
-VDS (Volts)
10
1
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
1000
100
10
8
-VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Alpha & Omega Semiconductor, Ltd.
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AON4407L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t off
t on
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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