Datasheet

AO4447A
30V P-Channel MOSFET
General Description
Product Summary
• The AO4447A uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.This
device is ideal for load switch and battery protection
applications.
VDS
ID (at VGS = -10V)
RDS(ON) (at VGS = -10V)
RDS(ON) (at VGS = -4.5V)
RDS(ON) (at VGS = -4V)
-30V
-17A
< 7mΩ
< 8mΩ
< 9mΩ
• RoHS and Halogen-Free Compliant
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
Rg
D
G
G
S
S
S
S
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
VGS
TA=25°C
TA=70°C
C
Power Dissipation B
L=0.1mH
TA=25°C
C
Junction and Storage Temperature Range
Rev.4.0: Sep. 2015
±20
V
ID
-13
IDM
-160
IAS
54
A
EAS
146
mJ
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
3.1
PD
TA=70°C
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient AD
Maximum Junction-to-Lead
Units
V
-17
Avalanche Current C
Avalanche energy
-30
Maximum
RθJA
RθJL
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-55 to 150
Typ
31
59
16
Max
40
75
24
°C
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4447A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID =-250µA, VGS = 0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS = 0V, VGS =±16V
VGS(th)
Gate Threshold Voltage
VDS =VGS ID =-250µA
-0.8
ID(ON)
On state drain current
VGS =-10V, VDS =-5V
-160
TJ = 55°C
TJ=125°C
5.5
7
A
VGS =-4V, ID =-13A
6.9
9
VDS =-5V, ID =-17A
70
Diode Forward Voltage
IS =-1A,VGS = 0V
IS
Maximum Body-Diode Continuous Current
-0.62
DYNAMIC PARAMETERS
Ciss
Input Capacitance
4580
VGS=0V, VDS=-15V, f=1MHz
mΩ
S
-1
V
-3
A
5500
pF
755
pF
564
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
V
8
VSD
Reverse Transfer Capacitance
-1.6
8.5
Forward Transconductance
Gate resistance
-1.3
7
gFS
Rg
µA
6.5
Static Drain-Source On-Resistance
Crss
±10
VGS =-4.5V, ID =-15A
RDS(ON)
110
Units
µA
-5
VGS =-10V, ID =-17A
Output Capacitance
Max
V
VDS =-30V, VGS = 0V
IDSS
Coss
Typ
pF
160
210
Ω
87
105
nC
41
nC
12.8
nC
Gate Drain Charge
17
nC
Turn-On DelayTime
180
ns
260
ns
1.2
µs
9.7
µs
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=-10V, VDS=-15V, ID=-17A
VGS=-10V, VDS=-15V
RL=-0.9Ω, RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=-17A, dI/dt=300A/µs
32
Qrr
Body Diode Reverse Recovery Charge IF=-17A, dI/dt=300A/µs
77
40
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board #REF!
with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: Sep. 2015
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Page 2 of 5
AO4447A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
160
-10V
140
-4V
VDS=-5V
-3.5V
-4.5V
120
80
60
80
-ID(A)
-ID (A)
100
-3V
40
60
40
125°C
20
VGS= -2.5V
20
25°C
0
0
0
1
2
3
4
5
0
2
3
4
-VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
10
Normalized On
On-Resistance
1.8
8
RDS(ON) (mΩ
Ω)
1
VGS=-4V
6
VGS=-4.5V
VGS=-10V
4
2
0
5
10
15
1.6
VGS= -10V
ID= -17A
1.4
VGS= -4.5V
ID= -15A
1.2
1.0
0.8
IF=-6.5A,
dI/dt=100A/µs
20
25
30
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
1E+02
20
ID= -17A
1E+01
16
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1E+00
12
1E-01
125°C
8
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
4
25°C
OUT OF SUCH APPLICATIONS OR USES OF 25°C
ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
1E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source
Figure 6: Body-Diode Characteristics(Note E)
Voltage(Note E)
Rev.4.0: Sep. 2015
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Page 3 of 5
AO4447A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7000
6000
10
-VGS (Volts)
8
Capacitance (pF)
VDS=-15V
ID= -17A
6
Ciss
5000
4000
3000
4
2000
2
1000
Coss
Crss
0
0
0
0
20
40
60
80
10µs
RDS(ON)
limited
25
30
1ms
10ms
1
100ms
DC
100
10
10s
TJ(Max)=150°C
TA=25°C
0.01
0.01
1000
Power (W)
-ID (Amps)
20
TJ(Max)=150°C
TA=25°C
100
0.1
1
IF=-6.5A,
10 dI/dt=100A/µs
100
1
0.00001
-VDS (Volts)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
15
10000
1000
0.1
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
5
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Rev.4.0: Sep. 2015
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Page 4 of 5
AO4447A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgs
Vds
+
VDC
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.4.0: Sep. 2015
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5