AO4488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4488/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications. AO4488 and AO4488L are electrically identical. -RoHS Compliant -AO4488L is Halogen Free VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V) S D S D S D G D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage 30 VGS ±20 Gate-Source Voltage TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current ID IDM B Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation A G TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. 17 12 IAR 50 EAR 375 TJ, TSTG Symbol t ≤ 10s Steady State Steady State 15 80 PD TA=70°C 20 RθJA RθJL V A mJ 3.1 1.7 2.0 1.1 -55 to 150 Typ 31 59 16 Units V Max 40 75 24 W °C Units °C/W °C/W °C/W www.aosmd.com AO4488 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V 1 TJ = 55°C 5 Gate-Body leakage current VDS = 0V, VGS = ±16V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 1.0 ID(ON) On state drain current VGS = 10V, VDS = 5V 80 TJ=125°C Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime 4.6 6.4 VDS = 5V, ID = 20A 72 0.69 5450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A V A 6.5 DYNAMIC PARAMETERS Ciss Input Capacitance Crss 3.8 5.2 IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current Coss 3 5.3 VSD IS 1.7 VGS = 4.5V, ID = 18A Forward Transconductance µA ±10 VGS = 10V, ID = 20A gFS Units V VDS = 30V, VGS = 0V Static Drain-Source On-Resistance Max 30 IGSS RDS(ON) Typ mΩ S 1 V 3 A 6800 pF 760 pF 540 pF 1 1.5 Ω 84 112 nC 42 56 nC 12 nC Gate Drain Charge 21 nC Turn-On DelayTime 13 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 9.8 ns 49 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 42 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 31 16 ns 56 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA 0 curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev1: Feb 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 80 10V 70 4V 60 3.5V 125°C 20 ID(A) 50 ID (A) VDS= 5V 25 4.5V 40 30 15 25°C 10 20 3V 10 5 -40°C VGS= 2.5V 0 0 0 1 2 3 4 5 0 1 6 VGS= 4.5V Normalized On-Resistance RDS(ON) (mΩ) 3 4 1.6 5.5 5 4.5 VGS= 10V 4 3.5 3 0 4 1.2 VGS= 4.5V ID= 18A 1.0 0.8 0.6 16 20 IF12 =-6.5A, dI/dt=100A/µs 8 VGS= 10V ID= 20A 1.4 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 16 1E+01 14 ID= 20A 1E+00 12 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 1E-01 10 IS (A) 125°C 1E-02 8 25°C 125°CAND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED 1E-03 6 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF4SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT 25°C TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 -40°C 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. -40°C 1E-05 10 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AO4488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10 VDS= 15V ID= 20A 8000 Capacitance (pF) VGS (Volts) 8 6 4 4000 Coss 2 2000 0 0 0 10 20 30 40 50 60 70 80 90 10 15 20 25 30 1000 100µs 1ms 1 10ms 100ms 0.1 0.1 1 10 DC 1 1E-04 0.001 0.01 I =-6.5A, dI/dt=100A/µs 10 100 F 1 VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=59°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s TJ(Max)=150°C TA=25°C 0.01 0.01 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited Power (W) ID (Amps) 5 VDS (Volts) Figure 8: Capacitance Characteristics 100 ZθJA Normalized Transient Thermal Resistance Crss 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 Ciss 6000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com