AGILENT AT

Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
AT-41410
Features
• Low Noise Figure:
1.6 dB Typical at 2.0␣ GHz
3.0 dB Typical at 4.0␣ GHz
• High Associated Gain:
14.0 dB Typical at 2.0␣ GHz
10.0 dB Typical at 4.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Hermetic, Gold-ceramic
Microstrip Package
Description
Hewlett-Packard’s AT-41410 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41410 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different
functions. The 14 emitter finger
5965-8923E
interdigitated geometry yields an
intermediate sized transistor with
impedances that are easy to match
for low noise and moderate power
applications. This device is designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near 50␣ Ω
at 1 GHz , makes this device easy
to use as a low noise amplifier.
The AT-41410 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
4-104
100 mil Package
AT-41410 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Absolute
Maximum[1]
1.5
20
12
60
500
200
-65 to 200
Units
V
V
V
mA
mW
°C
°C
Thermal Resistance [2,4]:
θjc = 170°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.9 mW/°C for TC > 115°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ. Max.
|S21E|2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
f = 4.0 GHz
dB
12.0
6.5
P1 dB
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dBm
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 25 mA
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
19.0
18.5
14.0
9.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
hFE
ICBO
IEBO
CCB
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
Notes:
1. For this test, the emitter is grounded.
4-105
dB
dB
13.0
GHz
—
µA
µA
pF
1.3
1.6
3.0
18.5
14.0
10.0
1.9
8.0
30
150
0.2
270
0.2
1.0
AT-41410 Typical Performance, TA = 25°C
GA
18
15
20
2.0 GHz
4.0 GHz
P1dB
16
8
9
6
6
4
NF50 Ω
3
NFO
0
0.5
1.0
2.0
2
2.0 GHz
12
G1 dB (dB)
12
NF (dB)
0
3.0 4.0 5.0
8
10
30
40
0
GAIN (dB)
GA
4.0 GHz
8
4.0 GHz
6
4
2.0 GHz
2
0
20
30
20
30
40
IC (mA)
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
40
IC (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
20
1.0 GHz
16
30
10
10
35
NFO (dB)
GAIN (dB)
20
40
12
3
2
IC (mA)
2.0 GHz
0
4
4V
6V
10 V
1
0
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
16
NFO
12
4.0 GHz
G1dB
FREQUENCY (GHz)
10
4V
GA
13
NFO
4
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
14
10 V
6V
14
MSG
25
20
15
|S21E|2
MAG
10
|S21E|2 GAIN (dB)
GAIN (dB)
15
16
GAIN (dB)
21
11
2.0 GHz
8
4.0 GHz
4
5
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
4-106
0
0
10
20
30
40
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
NFO (dB)
24
P1 dB (dBm)
24
AT-41410 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.61
-40
27.7
24.38
159
0.5
.60
-127
22.2
12.83
110
1.0
.60
-163
17.1
7.12
86
1.5
.60
179
13.8
4.89
71
2.0
.61
165
11.4
3.72
59
2.5
.61
157
9.7
3.04
52
3.0
.62
149
8.2
2.56
42
3.5
.63
140
7.0
2.23
31
4.0
.62
130
5.9
1.96
20
4.5
.61
120
4.9
1.76
10
5.0
.61
106
4.0
1.59
-1
5.5
.62
94
3.2
1.45
-11
6.0
.66
82
2.4
1.31
-22
dB
-40.0
-30.4
-28.2
-27.5
-26.0
-24.7
-23.9
-22.3
-21.3
-20.4
-18.9
-18.3
-17.5
S12
Mag.
.010
.030
.039
.042
.050
.058
.064
.077
.086
.095
.113
.121
.133
Ang.
75
40
35
45
42
46
50
48
44
41
38
33
30
Mag.
.94
.62
.50
.46
.45
.44
.44
.46
.48
.50
.52
.52
.51
S22
dB
-39.2
-33.6
-30.4
-28.2
-25.8
-24.4
-23.1
-21.9
-20.5
-19.3
-18.5
-17.6
-16.8
S12
Mag.
.011
.021
.030
.039
.051
.060
.070
.080
.094
.108
.119
.131
.144
Ang.
64
43
53
58
55
55
58
54
53
45
41
34
29
Mag.
.87
.49
.43
.41
.41
.40
.40
.42
.44
.46
.49
.49
.47
Ang.
-13
-33
-38
-42
-48
-52
-58
-68
-78
-85
-91
-97
-105
AT-41410 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.45
-69
31.4
37.17
150
0.5
.58
-153
23.3
14.63
101
1.0
.59
-178
17.7
7.68
81
1.5
.60
169
14.3
5.21
68
2.0
.60
157
11.9
3.94
56
2.5
.61
151
10.1
3.20
50
3.0
.62
144
8.6
2.70
40
3.5
.63
135
7.4
2.35
30
4.0
.62
126
6.3
2.07
19
4.5
.61
116
5.3
1.85
9
5.0
.61
103
4.5
1.67
-2
5.5
.63
91
3.6
1.52
-12
6.0
.67
80
2.8
1.37
-22
A model for this device is available in the DEVICE MODELS section.
AT-41410 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
NFO
dB
0.1
0.5
1.0
2.0
4.0
1.2
1.2
1.3
1.6
3.0
Γopt
Mag
.12
.10
.06
.26
.46
Ang
4
23
49
172
-133
4-107
RN/50
0.17
0.17
0.16
0.16
0.26
S22
Ang.
-18
-33
-35
-40
-45
-49
-56
-66
-76
-84
-90
-96
-104
100 mil Package Dimensions
.040
1.02
4
EMITTER
.020
.508
BASE
COLLECTOR
3
1
2
.004 ± .002
.10 ± .05
EMITTER
.100
2.54
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.030
.76
4-108