Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Hermetic, Gold-ceramic Microstrip Package Description Hewlett-Packard’s AT-41410 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41410 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different functions. The 14 emitter finger 5965-8923E interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50␣ Ω at 1 GHz , makes this device easy to use as a low noise amplifier. The AT-41410 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 4-104 100 mil Package AT-41410 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 60 500 200 -65 to 200 Units V V V mA mW °C °C Thermal Resistance [2,4]: θjc = 170°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 5.9 mW/°C for TC > 115°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz f = 4.0 GHz dB 12.0 6.5 P1 dB f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA 19.0 18.5 14.0 9.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA fT Gain Bandwidth Product: VCE = 8 V, IC = 25 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz Notes: 1. For this test, the emitter is grounded. 4-105 dB dB 13.0 GHz — µA µA pF 1.3 1.6 3.0 18.5 14.0 10.0 1.9 8.0 30 150 0.2 270 0.2 1.0 AT-41410 Typical Performance, TA = 25°C GA 18 15 20 2.0 GHz 4.0 GHz P1dB 16 8 9 6 6 4 NF50 Ω 3 NFO 0 0.5 1.0 2.0 2 2.0 GHz 12 G1 dB (dB) 12 NF (dB) 0 3.0 4.0 5.0 8 10 30 40 0 GAIN (dB) GA 4.0 GHz 8 4.0 GHz 6 4 2.0 GHz 2 0 20 30 20 30 40 IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. 40 IC (mA) Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 20 1.0 GHz 16 30 10 10 35 NFO (dB) GAIN (dB) 20 40 12 3 2 IC (mA) 2.0 GHz 0 4 4V 6V 10 V 1 0 Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 16 NFO 12 4.0 GHz G1dB FREQUENCY (GHz) 10 4V GA 13 NFO 4 Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 14 10 V 6V 14 MSG 25 20 15 |S21E|2 MAG 10 |S21E|2 GAIN (dB) GAIN (dB) 15 16 GAIN (dB) 21 11 2.0 GHz 8 4.0 GHz 4 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. 4-106 0 0 10 20 30 40 IC (mA) Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 24 P1 dB (dBm) 24 AT-41410 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .61 -40 27.7 24.38 159 0.5 .60 -127 22.2 12.83 110 1.0 .60 -163 17.1 7.12 86 1.5 .60 179 13.8 4.89 71 2.0 .61 165 11.4 3.72 59 2.5 .61 157 9.7 3.04 52 3.0 .62 149 8.2 2.56 42 3.5 .63 140 7.0 2.23 31 4.0 .62 130 5.9 1.96 20 4.5 .61 120 4.9 1.76 10 5.0 .61 106 4.0 1.59 -1 5.5 .62 94 3.2 1.45 -11 6.0 .66 82 2.4 1.31 -22 dB -40.0 -30.4 -28.2 -27.5 -26.0 -24.7 -23.9 -22.3 -21.3 -20.4 -18.9 -18.3 -17.5 S12 Mag. .010 .030 .039 .042 .050 .058 .064 .077 .086 .095 .113 .121 .133 Ang. 75 40 35 45 42 46 50 48 44 41 38 33 30 Mag. .94 .62 .50 .46 .45 .44 .44 .46 .48 .50 .52 .52 .51 S22 dB -39.2 -33.6 -30.4 -28.2 -25.8 -24.4 -23.1 -21.9 -20.5 -19.3 -18.5 -17.6 -16.8 S12 Mag. .011 .021 .030 .039 .051 .060 .070 .080 .094 .108 .119 .131 .144 Ang. 64 43 53 58 55 55 58 54 53 45 41 34 29 Mag. .87 .49 .43 .41 .41 .40 .40 .42 .44 .46 .49 .49 .47 Ang. -13 -33 -38 -42 -48 -52 -58 -68 -78 -85 -91 -97 -105 AT-41410 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .45 -69 31.4 37.17 150 0.5 .58 -153 23.3 14.63 101 1.0 .59 -178 17.7 7.68 81 1.5 .60 169 14.3 5.21 68 2.0 .60 157 11.9 3.94 56 2.5 .61 151 10.1 3.20 50 3.0 .62 144 8.6 2.70 40 3.5 .63 135 7.4 2.35 30 4.0 .62 126 6.3 2.07 19 4.5 .61 116 5.3 1.85 9 5.0 .61 103 4.5 1.67 -2 5.5 .63 91 3.6 1.52 -12 6.0 .67 80 2.8 1.37 -22 A model for this device is available in the DEVICE MODELS section. AT-41410 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.2 1.2 1.3 1.6 3.0 Γopt Mag .12 .10 .06 .26 .46 Ang 4 23 49 172 -133 4-107 RN/50 0.17 0.17 0.16 0.16 0.26 S22 Ang. -18 -33 -35 -40 -45 -49 -56 -66 -76 -84 -90 -96 -104 100 mil Package Dimensions .040 1.02 4 EMITTER .020 .508 BASE COLLECTOR 3 1 2 .004 ± .002 .10 ± .05 EMITTER .100 2.54 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .030 .76 4-108