Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT Description Agilent’s AT-41485 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT41485 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an interme- diate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω at 900 MHz, makes this device easy to use as a low noise amplifier. The AT-41485 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 85 Plastic Package 2 AT-41485 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW °C °C Absolute Maximum[1] 1.5 20 12 60 500 150 -65 to 150 Thermal Resistance [2,4]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.5 mW/°C for TC > 73°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol |S 21E |2 Parameters and Test Conditions Units Min. Typ. Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 1.0 GHz f = 2.0 GHz dB 17.5 11.5 f = 2.0 GHz dBm 18.5 G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz 1.4 1.7 3.0 18.5 13.5 9.5 fT Gain Bandwidth Product: VCE = 8 V, IC = 25 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz P1 dB Notes: 1. For this test, the emitter is grounded. dB 17.5 GHz — µA µA pF Max. 1.8 8.0 30 150 0.25 270 0.2 1.0 3 AT-41485 Typical Performance, TA = 25°C 24 GA 18 8 9 6 6 4 NF50 Ω 3 NFO 0 0.5 1.0 2.0 2 P1dB 2.0 GHz 12 G1 dB (dB) 12 0 3.0 4.0 5.0 10 30 40 0 4.0 GHz 4 2 0 20 30 40 IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 6 2.0 GHz 10 30 40 IC (mA) Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 1.0 GHz 16 MSG |S21E|2 GAIN (dB) GAIN (dB) GA 4.0 GHz 20 20 30 0 10 35 2.0 GHz 3 2 IC (mA) 12 GAIN (dB) 20 40 NFO 4 4V 6V 10 V 1 0 Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 16 8 4V 12 NFO FREQUENCY (GHz) 10 GA 13 4.0 GHz 8 G1dB 4 Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. 14 10 V 6V 14 2.0 GHz 4.0 GHz 16 NF (dB) GAIN (dB) 15 15 20 25 20 MAG 15 |S21E|2 10 12 2.0 GHz 8 4.0 GHz 4 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. 0 0 10 20 30 40 IC (mA) Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 21 16 GAIN (dB) P1 dB (dBm) 24 4 AT-41485 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. 0.1 .74 -40 28.2 25.80 0.5 .61 -126 21.9 12.46 1.0 .57 -161 16.6 6.80 1.5 .57 -180 13.4 4.67 2.0 .58 166 11.0 3.55 2.5 .59 160 9.3 2.92 3.0 .61 150 7.7 2.42 3.5 .62 142 6.4 2.09 4.0 .62 134 5.3 1.84 4.5 .62 125 4.3 1.65 5.0 .63 115 3.5 1.50 5.5 .65 103 2.7 1.37 6.0 .69 92 1.8 1.24 Ang. 156 108 87 75 64 59 50 41 32 24 15 6 -4 dB -35.6 -29.2 -27.9 -25.7 -24.5 -23.3 -21.9 -20.8 -19.5 -18.4 -17.2 -16.1 -15.3 S12 Mag. .017 .035 .040 .052 .060 .068 .080 .091 .106 .120 .138 .157 .172 Ang. 81 44 38 47 54 58 63 61 59 57 54 49 46 Mag. .93 .57 .46 .43 .41 .40 .39 .41 .42 .43 .44 .43 .40 S22 S12 Mag. .009 .023 .032 .043 .059 .065 .082 .092 .107 .125 .140 .160 .175 Ang. 57 52 63 60 64 71 68 67 65 63 56 50 47 Mag. .85 .47 .41 .39 .38 .36 .35 .37 .39 .40 .41 .40 .37 Ang. -14 -31 -33 -34 -38 -39 -46 -54 -62 -67 -73 -78 -86 AT-41485 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC = 25 mA S21 Freq. S11 GHz Mag. Ang. dB Mag. 0.1 .55 -68 32.0 40.01 0.5 .58 -153 23.1 14.20 1.0 .58 -177 17.4 7.39 1.5 .58 169 14.0 5.01 2.0 .60 158 11.6 3.78 2.5 .60 153 9.8 3.09 3.0 .63 147 8.1 2.55 3.5 .64 140 6.9 2.21 4.0 .64 133 5.8 1.94 4.5 .64 125 4.8 1.74 5.0 .64 115 4.0 1.58 5.5 .66 105 3.2 1.45 6.0 .70 94 2.4 1.32 Ang. 146 99 82 71 61 58 48 39 31 23 14 5 -5 dB -40.9 -32.7 -29.8 -27.3 -24.6 -23.7 -21.7 -20.7 -19.4 -18.1 -17.1 -15.9 -15.1 A model for this device is available in the DEVICE MODELS section. AT-41485 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.3 1.3 1.4 1.7 3.0 Γopt Mag .12 .10 .06 .25 .48 Ang 5 25 50 172 -131 RN/50 0.17 0.17 0.16 0.16 0.24 S22 Ang. -19 -29 -28 -30 -36 -39 -47 -56 -64 -71 -78 -82 -91 5 85 Plastic Package Dimensions .020 .51 EMITTER 4 0.143 ± 0.015 3.63 ± 0.38 1 BASE COLLECTOR 2 EMITTER .060 ± .010 1.52 ± .25 3 414 45° .085 2.15 5° TYP. .07 0.43 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .286 ± .030 7.36 ± .76 .006 ± .002 .15 ± .05 www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies 5965-8926E (11/99)