Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 9.0 GHz Typical fT Description Hewlett-Packard’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz , makes this device easy to use as a low noise amplifier. Chip Outline The AT-42000 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. The recommended assembly procedure is gold-eutectic die attach at 400oC and either wedge or ball bonding using 0.7 mil gold wire. See APPLICATIONS section, “Chip Use”. 4-149 5965-8909E AT-42000 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 80 600 200 -65 to 200 Units V V V mA mW °C °C Part Number Ordering Information Part Number Devices Per Tray AT-42000-GP4 100 Thermal Resistance [2,4]: θjc = 70°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface = 25°C. 3. Derate at 14.3 mW/°C for TMounting Surface > 158°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions[1] Units Min. Typ. Max. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz f = 4.0 GHz dB 11.5 5.5 P1 dB f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA 21.0 20.5 15.0 10.0 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[2]: VCB = 8 V, f = 1 MHz Notes: 1. RF performance is determined by packaging and testing 10 devices per wafer. 2. For this test, the emitter is grounded. 4-150 dB 1.9 3.0 14.0 10.5 dB GHz — µA µA pF 9.0 30 150 0.23 270 0.2 2.0 AT-42000 Typical Performance, TA = 25°C 24 20 4.0 GHz P1dB 16 20 10 V 20 1.0 GHz 6V 16 4V P1dB 12 16 |S21E|2 GAIN (dB) 2.0 GHz P1 dB (dBm) 2.0 GHz G1dB 4.0 GHz 8 0 10 20 30 40 16 10 V 14 6V 4V 0 10 IC (mA) 4.0 GHz 20 30 40 0 50 0 10 20 12 40 50 Figure 3. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 13 30 IC (mA) IC (mA) Figure 1. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 24 35 21 30 18 GA 10 V 11 6V 10 4V 9 8 7 GAIN (dB) |S21E|2 GAIN (dB) 4 G1dB 10 50 8 12 MSG 25 GAIN (dB) 4 G1 dB (dB) G1 dB (dB) 12 2.0 GHz 12 20 MAG 15 |S21E|2 10 20 30 40 50 IC (mA) Figure 4. Insertion Power Gain vs. Collector Current and Voltage. f = 2.0 GHz. 12 4 9 3 10 6 5 3 0 0 15 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 4-151 0 0.5 2 NFO 1 1.0 2.0 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 6. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. NFO (dB) P1 dB (dBm) 24 AT-42000 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .70 -50 28.0 25.19 155 0.5 .67 -136 20.9 11.04 108 1.0 .66 -166 15.7 6.08 90 1.5 .66 -173 12.1 4.02 86 2.0 .66 179 9.8 3.09 82 2.5 .67 170 7.8 2.46 74 3.0 .67 165 6.3 2.08 68 3.5 .70 157 5.1 1.80 61 4.0 .70 151 3.9 1.56 57 4.5 .71 145 2.9 1.40 51 5.0 .73 138 1.9 1.24 41 5.5 .74 132 1.2 1.15 36 6.0 .76 129 0.2 1.02 32 dB -37.7 -30.5 -28.9 -28.2 -27.5 -26.0 -24.7 -23.4 -21.8 -20.7 -19.3 -17.2 -16.3 S12 Mag. .013 .030 .036 .039 .042 .050 .058 .068 .081 .092 .109 .138 .154 Ang. 71 43 47 52 57 66 72 77 82 86 87 88 87 Mag. .92 .57 .50 .48 .47 .47 .47 .47 .48 .50 .51 .51 .53 S22 dB -40.9 -34.4 -30.5 -27.7 -25.4 -23.6 -22.1 -20.6 -19.7 -18.3 -17.5 -16.5 -15.7 S12 Mag. .009 .019 .030 .041 .054 .066 .079 .093 .104 .121 .133 .149 .164 Ang. 65 58 70 76 79 82 82 84 86 86 85 86 85 Mag. .79 .42 .38 .38 .38 .38 .38 .39 .40 .41 .42 .41 .44 Ang. -14 -27 -24 -23 -23 -23 -26 -28 -30 -34 -38 -50 -56 AT-42000 Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .49 -96 33.0 44.61 143 0.5 .62 -163 22.8 13.87 98 1.0 .63 179 17.2 7.25 86 1.5 .63 171 13.5 4.74 78 2.0 .65 163 11.2 3.62 72 2.5 .65 159 9.3 2.90 67 3.0 .68 154 7.8 2.44 60 3.5 .67 148 6.5 2.12 57 4.0 .69 144 5.3 1.83 51 4.5 .70 139 4.4 1.65 47 5.0 .70 137 3.3 1.46 43 5.5 .72 131 2.7 1.36 38 6.0 .74 128 1.7 1.22 34 A model for this device is available in the DEVICE MODELS section. AT-42000 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.0 1.1 1.5 1.9 3.0 Γopt Mag .04 .05 .09 .23 .47 Ang 13 69 127 171 -154 4-152 RN/50 0.13 0.13 0.12 0.11 0.14 S22 Ang. -24 -26 -22 -23 -25 -27 -29 -32 -34 -40 -44 -48 -55 AT-42000 Chip Dimensions 30 µm DIA 1.18 mil Base Pad 90 µm 3.54 mil 305 µm 12 mil Emitter Pad 305 µm 12 mil Note: Die thickness is 5 to 6 mil. 4-153