Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Cost Effective Ceramic Microstrip Package Description Hewlett-Packard’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41435 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter 5965-8925E finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω at 1 GHz, makes this device easy to use as a low noise amplifier. The AT-41435 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 4-114 35 micro-X Package AT-41435 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature[4] Absolute Maximum[1] 1.5 20 12 60 500 200 -65 to 200 Units V V V mA mW °C °C Thermal Resistance [2,5]: θjc = 200°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 5 mW/°C for TC > 100°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 200°C. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz f = 4.0 GHz dB 11.5 6.0 P1 dB f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA 19.0 18.5 14.0 9.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA fT Gain Bandwidth Product: VCE = 8 V, IC = 25 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz Note: 1. For this test, the emitter is grounded. 4-115 dB dB 13.0 GHz — µA µA pF 1.3 1.7 3.0 18.5 14.0 10.0 2.0 8.0 30 150 0.2 270 0.2 1.0 AT-41435 Typical Performance, TA = 25°C GA 15 20 2.0 GHz 4.0 GHz 16 8 9 6 6 4 NF50 Ω 3 NFO 0 0.5 1.0 2.0 2 P1dB 2.0 GHz 0 3.0 4.0 5.0 8 G1dB 4V 6V 10 V 1 0 10 20 30 40 0 MSG 4.0 GHz 6 4 2.0 GHz 2 0 40 IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 8 |S21E|2 GAIN (dB) 4.0 GHz 30 40 IC (mA) 16 30 20 30 20 GA 10 20 35 12 0 10 Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 40 2.0 GHz 3 2 IC (mA) GAIN (dB) GAIN (dB) 12 4.0 GHz Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 16 NFO GA 13 4 FREQUENCY (GHz) 10 10 V 6V 4V 14 NFO 4 Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 14 15 12 G1 dB (dB) 12 NF (dB) GAIN (dB) 18 16 25 20 MAG 15 |S21E|2 10 1.0 GHz 12 2.0 GHz 8 4.0 GHz 4 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. 4-116 0 0 10 20 30 40 IC (mA) Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 21 GAIN (dB) 24 P1 dB (dBm) 24 AT-41435 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .80 -32 28.0 24.99 157 0.5 .50 -110 21.8 12.30 108 1.0 .40 -152 16.6 6.73 85 1.5 .38 -176 13.3 4.63 71 2.0 .39 166 11.0 3.54 60 2.5 .41 156 9.3 2.91 53 3.0 .44 145 7.9 2.47 43 3.5 .46 137 6.7 2.15 33 4.0 .46 127 5.6 1.91 23 4.5 .47 116 4.7 1.72 13 5.0 .49 104 4.0 1.58 3 5.5 .52 91 3.3 1.45 -7 6.0 .59 81 2.5 1.34 -17 dB -39.2 -29.6 -26.2 -24.0 -21.9 -20.4 -18.8 -17.5 -16.0 -15.0 -13.9 -13.0 -12.1 S12 Mag. .011 .033 .049 .063 .080 .095 .115 .133 .153 .178 .201 .224 .247 Ang. 82 52 56 59 58 61 61 58 53 50 47 40 36 Mag. .93 .61 .51 .48 .46 .44 .43 .43 .45 .46 .48 .47 .43 S22 dB S12 Mag. Ang. Mag. Ang. -40.0 -31.4 -27.1 -23.5 -21.6 -19.6 -18.3 -16.8 -15.6 -14.6 -13.7 -12.6 -11.8 .010 .027 .044 .067 .083 .105 .122 .144 .165 .185 .207 .233 .257 83 60 67 66 63 63 64 59 55 50 45 39 33 .84 .50 .45 .43 .41 .39 .38 .39 .40 .42 .43 .42 .37 -18 -26 -26 -30 -34 -38 -47 -57 -67 -75 -81 -89 -101 Ang. -12 -28 -30 -32 -37 -40 -48 -58 -68 -75 -82 -89 -101 AT-41435 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .63 .39 .36 .36 .38 .40 .43 .45 .46 .46 .47 .51 .58 -50 -137 -171 171 156 149 140 132 122 112 101 89 79 31.8 22.9 17.2 13.9 11.5 9.8 8.3 7.2 6.1 5.2 4.4 3.7 3.0 39.08 13.97 7.28 4.94 3.76 3.08 2.61 2.28 2.02 1.82 1.66 1.54 1.41 146 99 80 68 58 52 43 33 23 14 4 -5 -15 A model for this device is available in the DEVICE MODELS section. AT-41435 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.2 1.2 1.3 1.7 3.0 Γopt Mag .12 .10 .05 .30 .54 Ang 3 14 28 -154 -118 4-117 RN/50 0.17 0.17 0.17 0.16 0.35 S22 35 micro-X Package Dimensions .085 2.15 4 EMITTER .083 DIA. 2.11 COLLECTOR 016 BASE 1 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 EMITTER .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 4-118