AGILENT AT

Up to 6 GHz Low Noise
Silicon␣ Bipolar Transistor
Technical Data
AT-41435
Features
• Low Noise Figure:
1.7 dB Typical at 2.0␣ GHz
3.0 dB Typical at 4.0␣ GHz
• High Associated Gain:
14.0 dB Typical at 2.0␣ GHz
10.0 dB Typical at 4.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Cost Effective Ceramic
Microstrip Package
Description
Hewlett-Packard’s AT-41435 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41435 is housed in a cost
effective surface mount 100 mil
micro-X package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
5965-8925E
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50 Ω at 1 GHz, makes
this device easy to use as a low
noise amplifier.
The AT-41435 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
4-114
35 micro-X Package
AT-41435 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature[4]
Absolute
Maximum[1]
1.5
20
12
60
500
200
-65 to 200
Units
V
V
V
mA
mW
°C
°C
Thermal Resistance [2,5]:
θjc = 200°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5 mW/°C for TC > 100°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit. After a device has been soldered into a
circuit, it may be safely stored up to 200°C.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ. Max.
|S21E|2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
f = 4.0 GHz
dB
11.5
6.0
P1 dB
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dBm
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 25 mA
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
19.0
18.5
14.0
9.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
hFE
ICBO
IEBO
CCB
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
Note:
1. For this test, the emitter is grounded.
4-115
dB
dB
13.0
GHz
—
µA
µA
pF
1.3
1.7
3.0
18.5
14.0
10.0
2.0
8.0
30
150
0.2
270
0.2
1.0
AT-41435 Typical Performance, TA = 25°C
GA
15
20
2.0 GHz
4.0 GHz
16
8
9
6
6
4
NF50 Ω
3
NFO
0
0.5
1.0
2.0
2
P1dB
2.0 GHz
0
3.0 4.0 5.0
8
G1dB
4V
6V
10 V
1
0
10
20
30
40
0
MSG
4.0 GHz 6
4
2.0 GHz
2
0
40
IC (mA)
Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
NFO (dB)
8
|S21E|2 GAIN (dB)
4.0 GHz
30
40
IC (mA)
16
30
20
30
20
GA
10
20
35
12
0
10
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
40
2.0 GHz
3
2
IC (mA)
GAIN (dB)
GAIN (dB)
12
4.0 GHz
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
16
NFO
GA
13
4
FREQUENCY (GHz)
10
10 V
6V
4V
14
NFO
4
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
14
15
12
G1 dB (dB)
12
NF (dB)
GAIN (dB)
18
16
25
20
MAG
15
|S21E|2
10
1.0 GHz
12
2.0 GHz
8
4.0 GHz
4
5
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
4-116
0
0
10
20
30
40
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
NFO (dB)
21
GAIN (dB)
24
P1 dB (dBm)
24
AT-41435 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.80
-32
28.0
24.99
157
0.5
.50
-110
21.8
12.30
108
1.0
.40
-152
16.6
6.73
85
1.5
.38
-176
13.3
4.63
71
2.0
.39
166
11.0
3.54
60
2.5
.41
156
9.3
2.91
53
3.0
.44
145
7.9
2.47
43
3.5
.46
137
6.7
2.15
33
4.0
.46
127
5.6
1.91
23
4.5
.47
116
4.7
1.72
13
5.0
.49
104
4.0
1.58
3
5.5
.52
91
3.3
1.45
-7
6.0
.59
81
2.5
1.34
-17
dB
-39.2
-29.6
-26.2
-24.0
-21.9
-20.4
-18.8
-17.5
-16.0
-15.0
-13.9
-13.0
-12.1
S12
Mag.
.011
.033
.049
.063
.080
.095
.115
.133
.153
.178
.201
.224
.247
Ang.
82
52
56
59
58
61
61
58
53
50
47
40
36
Mag.
.93
.61
.51
.48
.46
.44
.43
.43
.45
.46
.48
.47
.43
S22
dB
S12
Mag.
Ang.
Mag.
Ang.
-40.0
-31.4
-27.1
-23.5
-21.6
-19.6
-18.3
-16.8
-15.6
-14.6
-13.7
-12.6
-11.8
.010
.027
.044
.067
.083
.105
.122
.144
.165
.185
.207
.233
.257
83
60
67
66
63
63
64
59
55
50
45
39
33
.84
.50
.45
.43
.41
.39
.38
.39
.40
.42
.43
.42
.37
-18
-26
-26
-30
-34
-38
-47
-57
-67
-75
-81
-89
-101
Ang.
-12
-28
-30
-32
-37
-40
-48
-58
-68
-75
-82
-89
-101
AT-41435 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.63
.39
.36
.36
.38
.40
.43
.45
.46
.46
.47
.51
.58
-50
-137
-171
171
156
149
140
132
122
112
101
89
79
31.8
22.9
17.2
13.9
11.5
9.8
8.3
7.2
6.1
5.2
4.4
3.7
3.0
39.08
13.97
7.28
4.94
3.76
3.08
2.61
2.28
2.02
1.82
1.66
1.54
1.41
146
99
80
68
58
52
43
33
23
14
4
-5
-15
A model for this device is available in the DEVICE MODELS section.
AT-41435 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
NFO
dB
0.1
0.5
1.0
2.0
4.0
1.2
1.2
1.3
1.7
3.0
Γopt
Mag
.12
.10
.05
.30
.54
Ang
3
14
28
-154
-118
4-117
RN/50
0.17
0.17
0.17
0.16
0.35
S22
35 micro-X Package Dimensions
.085
2.15
4
EMITTER
.083 DIA.
2.11
COLLECTOR
016
BASE
1
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
EMITTER
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
4-118