Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0␣ GHz 10.0 dB Typical G1 dB at 4.0␣ GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0␣ GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Hermetic Gold-ceramic Microstrip Package Description Hewlett-Packard’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42070 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many 5965-8912E different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50␣ Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42070 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 4-164 70 mil Package AT-42070 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 80 600 200 -65 to 200 Units V V V mA mW °C °C Electrical Specifications, TA = 25°C Symbol Thermal Resistance [2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 110°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Parameters and Test Conditions[1] Units Min. Typ. Max. f = 2.0 GHz f = 4.0 GHz dB 10.5 11.5 5.5 f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 35 mA P1 dB Note: 1. For this test, the emitter is grounded. 4-165 21.0 20.5 15.0 10.0 dB 1.9 3.0 14.0 10.5 dB GHz — µA µA pF 8.0 30 150 0.28 270 0.2 2.0 AT-42070 Typical Performance, TA = 25°C 24 2.0 GHz 12 2.0 GHz 20 4.0 GHz P1dB 16 6V 16 4V P1dB 12 12 0 0 10 20 30 40 4.0 GHz 8 4 50 16 G1dB 0 10 G1 dB (dB) 4.0 GHz 4 20 IC (mA) 30 40 24 35 21 30 18 GA MAG 15 |S21E|2 15 12 4 9 3 10 6 5 3 2 NFO 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 0 0.5 1 1.0 2.0 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 4-166 NFO (dB) GAIN (dB) 20 12 0 10 20 30 40 50 Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. MSG 25 6V 4V G1dB IC (mA) Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 10 V 14 10 50 IC (mA) Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. GAIN (dB) 10 V 20 2.0 GHz 8 G1 dB (dB) |S21E|2 GAIN (dB) 16 24 P1 dB (dBm) 1.0 GHz P1 dB (dBm) 20 AT-42070 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .70 -49 28.5 26.56 154 0.5 .69 -137 21.5 11.85 105 1.0 .69 -165 16.0 6.34 85 1.5 .68 -179 12.7 4.33 72 2.0 .69 169 10.3 3.26 62 2.5 .69 164 8.5 2.64 56 3.0 .70 157 6.9 2.22 48 3.5 .70 151 5.6 1.91 39 4.0 .69 144 4.5 1.68 30 4.5 .68 137 3.5 1.50 22 5.0 .68 128 2.7 1.37 14 5.5 .68 117 2.0 1.26 5 6.0 .70 107 1.2 1.15 -3 dB -36.0 -29.6 -27.2 -27.4 -25.6 -25.4 -23.8 -22.4 -21.4 -20.4 -19.4 -18.3 -17.6 S12 Mag. .016 .033 .044 .043 .052 .054 .065 .076 .085 .096 .107 .121 .132 Ang. 77 34 29 37 42 46 52 51 55 49 50 45 44 Mag. .91 .50 .40 .38 .37 .37 .39 .41 .43 .46 .48 .48 .48 S22 dB -40.0 -34.4 -29.6 -28.0 -27.3 -23.8 -22.8 -21.4 -20.2 -19.3 -18.0 -17.2 -16.4 S12 Mag. .010 .019 .033 .040 .053 .065 .072 .086 .097 .109 .126 .138 .152 Ang. 50 46 51 59 59 65 65 59 60 54 50 46 40 Mag. .77 .34 .28 .27 .27 .28 .28 .30 .33 .36 .38 .39 .38 Ang. -18 -41 -44 -48 -54 -55 -63 -71 -77 -83 -87 -91 -98 AT-42070 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .52 -95 33.4 46.52 139 0.5 .66 -163 23.1 14.33 95 1.0 .67 179 17.3 7.36 80 1.5 .67 169 13.9 4.97 69 2.0 .68 160 11.4 3.74 60 2.5 .69 157 9.6 3.04 55 3.0 .69 151 8.1 2.55 47 3.5 .69 145 6.8 2.20 39 4.0 .68 139 5.7 1.93 20 4.5 .67 132 4.7 1.74 22 5.0 .67 123 4.0 1.59 13 5.5 .67 113 3.2 1.46 5 6.0 .69 103 2.5 1.34 -4 A model for this device is available in the DEVICE MODELS section. AT-42070 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.0 1.1 1.5 1.9 3.0 Γopt Mag .05 .06 .10 .23 .45 Ang 15 75 126 172 -145 4-167 RN/50 0.13 0.13 0.12 0.11 0.17 S22 Ang. -29 -42 -41 -44 -51 -53 -62 -72 -80 -85 -90 -94 -102 70 mil Package Dimensions .040 1.02 4 EMITTER .020 .508 BASE COLLECTOR 3 1 2 .004 ± .002 .10 ± .05 EMITTER .070 1.70 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 4-168