Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Cost Effective Ceramic Microstrip Package Description Agilent’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42035 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 35 micro-X Package 2 AT-42035 Absolute Maximum Ratings [1] Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature[4] Units V V V mA mW °C °C Absolute Maximum 1.5 20 12 80 600 150 -65 to 150 Thermal Resistance [2,5]: θjc = 175°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 5.7 mW/°C for TC > 95°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol |S 21E |2 Parameters and Test Conditions[1] Units Min. Typ. 10.0 11.0 5.0 Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz f = 4.0 GHz dB f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz P1 dB Notes: 1. For this test, the emitter is grounded. 21.0 20.5 14.0 9.5 dB 2.0 3.0 13.5 10.0 dB GHz — µA µA pF Max. 8.0 30 150 0.28 270 0.2 2.0 3 AT-42035 Typical Performance, TA = 25°C 24 12 2.0 GHz 20 4.0 GHz P1dB 16 2.0 GHz 6V 16 4V P1dB 12 12 0 0 10 20 30 40 G1dB 8 4 50 16 G1 dB (dB) 4.0 GHz 4 4.0 GHz 0 10 20 IC (mA) 30 40 24 35 21 30 18 MSG MAG 15 |S21E|2 10 15 12 4 9 3 6 NFO 5 3 0 0 0.5 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 2 1 1.0 2.0 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. NFO (dB) GAIN (dB) 20 0 10 20 30 40 50 Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. GA 25 G1dB 12 IC (mA) Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 10 V 6V 4V 14 10 50 IC (mA) Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. GAIN (dB) 10 V 20 2.0 GHz 8 G1 dB (dB) |S21E|2 GAIN (dB) 16 24 P1 dB (dBm) 1.0 GHz P1 dB (dBm) 20 4 AT-42035 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .72 -46 28.3 26.09 152 0.5 .59 -137 20.9 11.13 102 1.0 .56 -171 15.4 5.91 80 1.5 .56 169 12.1 4.03 67 2.0 .58 155 9.7 3.06 55 2.5 .59 147 8.0 2.50 48 3.0 .61 137 6.5 2.10 38 3.5 .63 128 5.2 1.82 27 4.0 .63 117 4.0 1.60 17 4.5 .63 106 3.1 1.43 7 5.0 .64 93 2.3 1.30 -3 5.5 .67 79 1.5 1.19 -13 6.0 .72 70 0.6 1.07 -23 dB -37.0 -31.0 -28.2 -26.6 -24.2 -22.6 -20.8 -19.6 -18.0 -16.5 -15.4 -14.3 -13.4 S12 Mag. .014 .028 .039 .047 .062 .074 .092 .105 .126 .149 .169 .193 .215 Ang. 73 44 47 52 55 61 65 62 57 53 48 41 35 Mag. .92 .58 .51 .50 .48 .47 .46 .47 .49 .51 .52 .51 .46 S22 dB -42.0 -32.8 -28.2 -25.6 -23.2 -21.6 -20.0 -18.4 -17.0 -16.0 -14.9 -14.1 -13.2 S12 Mag. .008 .023 .039 .053 .069 .084 .101 .120 .141 .158 .179 .198 .219 Ang. 68 57 63 66 65 67 64 61 57 50 45 37 30 Mag. .77 .45 .42 .41 .41 .39 .38 .39 .41 .43 .44 .43 .38 Ang. -14 -27 -29 -33 -38 -42 -51 -63 -72 -80 -87 -94 -105 AT-42035 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA S21 Freq. S11 GHz Mag. Ang. dB Mag. Ang. 0.1 .50 -88 33.2 45.64 135 0.5 .52 -164 22.4 13.24 92 1.0 .53 174 16.6 6.75 76 1.5 .53 160 13.1 4.55 64 2.0 .55 148 10.8 3.45 53 2.5 .57 142 9.0 2.81 47 3.0 .59 134 7.5 2.37 37 3.5 .60 125 6.3 2.06 27 4.0 .60 116 5.2 1.81 17 4.5 .60 104 4.2 1.62 7 5.0 .61 92 3.4 1.47 -2 5.5 .64 79 2.6 1.35 -13 6.0 .69 70 1.7 1.21 -23 A model for this device is available in the DEVICE MODELS section. AT-42035 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz NFO dB 0.1 0.5 1.0 2.0 4.0 1.0 1.1 1.3 2.0 3.0 Γopt Mag .04 .04 .07 .20 .51 Ang 10 66 150 -178 -110 RN/50 0.13 0.12 0.12 0.12 0.36 S22 Ang. -22 -25 -26 -30 -36 -40 -49 -61 -71 -78 -84 -91 -102 5 35 micro-X Package Dimensions .085 2.15 4 EMITTER .083 DIA. 2.11 COLLECTOR 420 BASE 016 1 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 EMITTER .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. Obsoletes 5965-8911E October 31, 2001 5988-4734EN