ETC AT-42035-BLK

Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42035
Features
• High Output Power:
21.0 dBm Typical P1 dB at 2.0 GHz
20.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB
Compression:
14.0 dB Typical G1 dB at 2.0 GHz
9.5 dB Typical G1 dB at 4.0 GHz
• Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Cost Effective Ceramic
Microstrip Package
Description
Agilent’s AT-42035 is a general
purpose NPN bipolar transistor
that offers excellent high
frequency performance. The
AT-42035 is housed in a cost
effective surface mount 100 mil
micro-X package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near
50 Ω up to 1 GHz, makes this
device easy to use as a low noise
amplifier.
The AT-42035 bipolar transistor is
fabricated using Agilent’s 10 GHz fT
Self-Aligned-Transistor (SAT)
process. The die is nitride passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
35 micro-X Package
2
AT-42035 Absolute Maximum Ratings [1]
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature[4]
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
1.5
20
12
80
600
150
-65 to 150
Thermal Resistance [2,5]:
θjc = 175°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 5.7 mW/°C for TC > 95°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult
to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications, TA = 25°C
Symbol
|S 21E
|2
Parameters and Test Conditions[1]
Units
Min.
Typ.
10.0
11.0
5.0
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
f = 4.0 GHz
dB
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dBm
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
dB
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
hFE
ICBO
IEBO
CCB
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
P1 dB
Notes:
1. For this test, the emitter is grounded.
21.0
20.5
14.0
9.5
dB
2.0
3.0
13.5
10.0
dB
GHz
—
µA
µA
pF
Max.
8.0
30
150
0.28
270
0.2
2.0
3
AT-42035 Typical Performance, TA = 25°C
24
12
2.0 GHz
20
4.0 GHz
P1dB
16
2.0 GHz
6V
16
4V
P1dB
12
12
0
0
10
20
30
40
G1dB
8
4
50
16
G1 dB (dB)
4.0 GHz
4
4.0 GHz
0
10
20
IC (mA)
30
40
24
35
21
30
18
MSG
MAG
15
|S21E|2
10
15
12
4
9
3
6
NFO
5
3
0
0
0.5
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
2
1
1.0
2.0
0
3.0 4.0 5.0
FREQUENCY (GHz)
Figure 5. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10 mA.
NFO (dB)
GAIN (dB)
20
0
10
20
30
40
50
Figure 3. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
GA
25
G1dB
12
IC (mA)
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
40
10 V
6V
4V
14
10
50
IC (mA)
Figure 1. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
GAIN (dB)
10 V
20
2.0 GHz
8
G1 dB (dB)
|S21E|2 GAIN (dB)
16
24
P1 dB (dBm)
1.0 GHz
P1 dB (dBm)
20
4
AT-42035 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.72
-46
28.3
26.09
152
0.5
.59
-137
20.9
11.13
102
1.0
.56
-171
15.4
5.91
80
1.5
.56
169
12.1
4.03
67
2.0
.58
155
9.7
3.06
55
2.5
.59
147
8.0
2.50
48
3.0
.61
137
6.5
2.10
38
3.5
.63
128
5.2
1.82
27
4.0
.63
117
4.0
1.60
17
4.5
.63
106
3.1
1.43
7
5.0
.64
93
2.3
1.30
-3
5.5
.67
79
1.5
1.19
-13
6.0
.72
70
0.6
1.07
-23
dB
-37.0
-31.0
-28.2
-26.6
-24.2
-22.6
-20.8
-19.6
-18.0
-16.5
-15.4
-14.3
-13.4
S12
Mag.
.014
.028
.039
.047
.062
.074
.092
.105
.126
.149
.169
.193
.215
Ang.
73
44
47
52
55
61
65
62
57
53
48
41
35
Mag.
.92
.58
.51
.50
.48
.47
.46
.47
.49
.51
.52
.51
.46
S22
dB
-42.0
-32.8
-28.2
-25.6
-23.2
-21.6
-20.0
-18.4
-17.0
-16.0
-14.9
-14.1
-13.2
S12
Mag.
.008
.023
.039
.053
.069
.084
.101
.120
.141
.158
.179
.198
.219
Ang.
68
57
63
66
65
67
64
61
57
50
45
37
30
Mag.
.77
.45
.42
.41
.41
.39
.38
.39
.41
.43
.44
.43
.38
Ang.
-14
-27
-29
-33
-38
-42
-51
-63
-72
-80
-87
-94
-105
AT-42035 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA
S21
Freq.
S11
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.50
-88
33.2
45.64
135
0.5
.52
-164
22.4
13.24
92
1.0
.53
174
16.6
6.75
76
1.5
.53
160
13.1
4.55
64
2.0
.55
148
10.8
3.45
53
2.5
.57
142
9.0
2.81
47
3.0
.59
134
7.5
2.37
37
3.5
.60
125
6.3
2.06
27
4.0
.60
116
5.2
1.81
17
4.5
.60
104
4.2
1.62
7
5.0
.61
92
3.4
1.47
-2
5.5
.64
79
2.6
1.35
-13
6.0
.69
70
1.7
1.21
-23
A model for this device is available in the DEVICE MODELS section.
AT-42035 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
NFO
dB
0.1
0.5
1.0
2.0
4.0
1.0
1.1
1.3
2.0
3.0
Γopt
Mag
.04
.04
.07
.20
.51
Ang
10
66
150
-178
-110
RN/50
0.13
0.12
0.12
0.12
0.36
S22
Ang.
-22
-25
-26
-30
-36
-40
-49
-61
-71
-78
-84
-91
-102
5
35 micro-X Package Dimensions
.085
2.15
4
EMITTER
.083 DIA.
2.11
COLLECTOR
420
BASE
016
1
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
EMITTER
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5965-8911E
October 31, 2001
5988-4734EN