AVAGO AT-42086-TR2G

AT-42086
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Data Sheet
Avago’s AT-42086 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.
The AT-42086 is housed in a low cost surface mount .085"
diameter plastic package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 20 emitter finger interdigitated geometry
yields a medium sized transistor with impedances that are
easy to match for low noise and medium power applications. Applications include use in wireless systems as an
LNA, gain stage, buffer, oscillator, and mixer. An optimum
noise match near 50Ω up to 1 GHz, makes this device easy
to use as a low noise amplifier.
The AT-42086 bipolar transistor is fabricated using Avago’s
10 GHz fT Self-Aligned-Transistor (SAT) process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by
the use of ion-implantation, self-alignment techniques,
and gold metalization in the fabrication of this device.
Features
• High Output Power:
20.5 dBm Typical P1 dB at 2.0 GHz
• High Gain at 1 dB Compression:
13.5 dB Typical G1 dB at 2.0 GHz
• Low Noise Figure:
1.9 dB Typical NFO at 2.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical fT
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available
• Lead-free Option Available
86 Plastic Package
Pin Connections
EMITTER
4
420
Description
BASE
1
COLLECTOR
3
2
EMITTER
AT-42086 Absolute Maximum Ratings
Symbol
Parameter
Units
Absolute
Maximum[1]
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
80
PT
Power Dissipation [2,3]
mW
500
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance [2]:
θjc = 140°C/W
Notes:
1. Permanent damage may occur if any
of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.1 mW/°C for TC > 80°C.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Min.
Typ.
15.0
16.5
10.5
4.5
|S 21E| 2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
P1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
f = 2.0 GHz
f= 4.0 GHz
dBm
20.5
20.0
G1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
f = 4.0 GHz
dB
13.5
9.0
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
f = 2.0 GHz
f = 4.0 GHz
dB
1.9
3.5
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
f = 4.0 GHz
dB
13.0
9.0
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
GHz
8.0
hFE
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
—
Collector Cutoff Current; VCB = 8 V
µA
0.2
IEBO
Emitter Cutoff Current; VEB = 1 V
µA
2.0
CCB
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
pF
1. For this test, the emitter is grounded.
30
150
Max.
ICBO
Note:
2
Units
0.32
270
AT-42086 Typical Performance, TA = 25°C
20
20
2.0 GHz
G1 dB (dB)
25
12
2.0 GHz
8
GAIN (dB)
P1dB
20
MAG
15
|S21E|2
4.0 GHz
G1dB
8
MSG
30
4.0 GHz
12
10
4
4.0 GHz
5
4
0
0
0
10
20
30
40
50
0
IC (mA)
21
GA
12
4
9
3
6
2
NFO
3
1
1.0
2.0
3.0
0
4.0 5.0
FREQUENCY (GHz)
Figure 4. Noise Figure and Associated Gain vs.
Frequency. VCE = 8 V, IC = 10 mA.
NFO (dB)
15
0
0.5
20
30
40
50
Figure 2. Insertion Power Gain vs. Collector Current
and Frequency. VCE = 8 V.
24
18
10
IC (mA)
Figure 1. Output Power and 1 dB Compressed Gain vs.
Collector Current and Frequency. VCE = 8 V.
GAIN (dB)
35
16
16
3
40
1.0 GHz
2.0 GHz
|S21E|2 GAIN (dB)
P1 dB (dBm)
24
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
AT-42086 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.68
.63
.63
.65
.66
.69
.71
.73
.75
.78
.80
.82
.85
-48
-141
-176
164
151
142
132
123
115
108
101
95
89
28.0
20.9
15.4
12.0
9.5
7.8
6.2
4.8
3.6
2.6
1.6
0.6
-0.2
25.12
11.07
5.87
3.98
2.99
2.44
2.04
1.74
1.51
1.34
1.20
1.08
0.97
153
102
80
65
53
45
34
24
14
5
-4
-12
-21
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
-36.0
-29.9
-27.4
-26.0
-23.9
-23.1
-21.6
-19.7
-18.3
-17.2
-16.0
-14.8
-14.0
.016
.032
.043
.050
.064
.070
.084
.104
.122
.138
.159
.182
.200
65
42
43
46
52
53
54
53
51
50
46
40
35
.91
.54
.43
.40
.38
.36
.34
.33
.30
.31
.31
.32
.34
-15
-30
-30
-34
-40
-46
-54
-67
-80
-94
-110
-129
-148
dB
S12
Mag.
Ang.
Mag.
Ang.
-37.7
-32.6
-28.7
-24.8
-23.0
-21.0
-19.7
-18.4
-17.3
-15.9
-15.2
-14.3
-13.4
.013
.023
.037
.057
.071
.089
.104
.121
.136
.161
.174
.193
.213
65
57
62
64
61
56
58
55
49
46
43
36
31
.77
.39
.33
.31
.29
.26
.25
.24
.20
.21
.21
.22
.25
-25
-28
-27
-31
-37
-45
-53
-65
-80
-95
-115
-136
-156
AT-42086 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
.48
.57
.59
.61
.63
.68
.68
.71
.73
.76
.78
.81
.84
-94
-168
168
154
143
137
127
118
111
104
98
91
85
32.8
22.4
16.5
13.0
10.5
8.7
7.0
5.7
4.5
3.5
2.4
1.6
0.7
43.62
13.21
6.69
4.48
3.36
2.72
2.25
1.92
1.69
1.49
1.32
1.20
1.08
137
92
75
62
51
43
33
24
14
5
-3
-12
-20
AT-42086 Noise Parameters: VCE = 8 V, IC = 10 mA
4
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
RN/50
0.1
0.5
1.0
2.0
4.0
1.0
1.1
1.5
1.9
3.5
.04
.03
.06
.25
.58
8
62
168
-146
-100
0.13
0.12
0.12
0.12
0.52
S22
Ordering Information
86 Plastic Package Dimensions
Part Numbers
No. of Devices
Comments
AT-42086-BLKG
100
Bulk
AT-42086-TR1G
1000
7" Reel
AT-42086-TR2G
4000
13" Reel
0.51 ± 0.13
(0.020 ± 0.005)
4
45°
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
1
2
1.52 ± 0.25
(0.060 ± 0.010)
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
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Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes 5989-2656EN
AV02-1460EN - August 8, 2008