CHENMKO ENTERPRISE CO.,LTD CHDTA113TUPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. (2) Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=1.0kΩ, Typ. ) (3) 1.3±0.1 CONSTRUCTION (1) * * * * 0.65 2.0±0.2 0.65 0.3±0.1 1.25±0.1 * One PNP transistors and bias of thin-film resistors in one package. MARKING * TU7 E CIRCUIT 0.8~1.1 0.05~0.2 0~0.1 0.1Min. B 2 2.0~2.45 1 TR R1 3 SC-70/SOT-323 Dimensions in millimeters C LIMITING VALUES In accordance with the Absolute Maxim um Rating System (IEC60134). SYMBOL PARAMETER VALUE CONDITIONS UNIT VCBO Coll ector -Base voltage -50 V VCEO Collector-Emitter voltage -50 V VEBO Emitter-Base voltage -5 V IC(Max.) Coll ector current -100 mA PD Power dissipation 200 mW TSTG Storage temperature −55 ∼ +150 O TJ Junction temperature −55 ∼ +150 O C 140 O C/W RθJ-S Thermal resistance , Note 1 Tamb ≤ 25 OC, Note 1 junction - soldering point Note 1. Transistor mounted on an FR4 printed-circuit board. C 2005-06 RATING CHARACTERISTIC ( CHDTA113TUPT ) CHARA CTERISTICS Tamb = 25 °C unless otherwise speciÞed. SY MBOL PARAMETER CONDITIONS MIN. MAX. UNIT -50.0 − − V -50.0 − − V − V BVCBO Collector-Base breakdown voltage BVCEO Collector-Emitter breakdown voltage IC= -1mA BVEBO Emitter-Base breakdown voltage IE= -50uA -5.0 − IC= -50uA TY P . − VCE(sat) Collector-Emitter Saturation voltage IC= -5mA; IB= -0.25mA − -0.3 V ICBO Collector-Base current VCB= -50V − − -0.5 uA IEBO Emitter-Base current VEB= -4V − − -0.5 uA hFE DC current gain IC= -1mA; VCE= -5.0V 100 250 600 R1 fT Input resistor Transition frequency 0.7 − 1.0 250 1.3 − Not e 1.Pulse test: tp≤300uS; δ ≤0.02. IE=5mA, VCB= -10.0V f=100MHz = KΩ MHz RATING CHARACTERISTIC CURVES ( CHDTA113TUPT ) Fig.1 DC current gain vs. collector current 1k DC CURRENT GAIN : hFE 500 VCE=-5V Ta=100OC 200 100 25OC O -40 C 50 20 10 5 2 1 -100 -500 −1m -5m -10m -50m -100m COLLECTOR CURRENT : IC (A) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Typical Electrical Characteristics Fig.2 Collector-emitter saturation voltage vs. collector current -1 lC/lB=10 -500m -200m -100m -50m 100OC 25OC -40 OC -20m -10m -5m -2m -1m -100u -500u -1m -5m -10m COLLECTOR CURRENT : IC (A) -50m -100m