CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts CHM4269JPT CURRENT 6.1 Ampere CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel & P-Channel Enhancement in the package .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) SO-8 Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) TA = 25°C unless otherwise noted Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 40 -40 V VGSS Gate-Source Voltage ±20 ±20 V 6.1 -5.2 20 -20 Maximum Drain Current - Continuous ID A - Pulsed (Note 3) PD Maximum Power Dissipation at Ta=25°C TJ TSTG 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W 2007-06 ELECTRICAL CHARACTERISTIC ( CHM4269JPT ) N-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min 40 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 40 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 1 VGS=10V, ID=6A 32 VGS=4.5V, ID=5A 46 VDS =5V, ID = 6A 3 mΩ S Dynamic Characteristics Ciss 1050 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 20V, VGS = 0V, f = 1.0 MHz 155 pF 95 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge VDS=20V, ID=6A VGS=10V 20.5 27 nC 3.5 4.0 t on Turn-On Time V DD= 20V 14 30 tr Rise Time I D = 6A , VGS = 10 V 10 20 t off Turn-Off Time RGEN= 3 Ω 17 35 tf Fall Time 18 35 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 1.0A , VGS = 0 V (Note 2) (Note 1) 1.0 A 1.0 V ELECTRICAL CHARACTERISTIC ( CHM4269JPT ) P-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min -40 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -40 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -1 VGS=-10V, ID=-5A 43 VGS=-4.5V, ID=-2A 65 VDS = -5V , ID = -4.8A 3 mΩ S Dynamic Characteristics Ciss 1115 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -20V, VGS = 0V, f = 1.0 MHz 205 pF 120 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge VDS=-20V, ID=-5A VGS=-10V 20 26 nC 3.3 4.1 t on Turn-On Time V DD= -20V 12 25 tr Rise Time I D = -5A , VGS = -10 V 5 10 t off Turn-Off Time RGEN= 3 Ω 40 80 tf Fall Time 10 20 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.0A , VGS = 0 V (Note 2) (Note 1) -1.0 A -1.0 V RATING CHARACTERISTIC CURVES ( CHM4269JPT ) N-Channel Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 30 20 16 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 24 V G S =10,5,4.5V 18 VG S =4.0V 12 6 12 8 TJ=125°C VG S =3.5V 0 0 TJ=-55°C 0 4.0 3.0 2.0 1.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 2.0 4.0 4.5 VGS=6V ID=10A R DS(on) , NORMALIZED 8 6 4 2 0 0 4 8 12 16 Qg , TOTAL GATE CHARGE (nC) 20 24 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 3.5 2.2 VDS=20V ID=8A THRESHOLD VOLTAGE 3.0 Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge Vth , NORMALIZED GATE-SOURCE 2.5 VGS , GATE-TO-SOURCE VOLTAGE (V) 10 1.3 TJ=25°C 4 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200 RATING CHARACTERISTIC CURVES ( CHM4269JPT ) P-Channel Typical Electrical Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics 30 25 VG S =-10,-6,-5,-4.5V 20 -I D , DRAIN CURRENT (A) -I D , DRAIN CURRENT (A) 24 VG S =-4.0V 18 12 VG S =-3.5V 6 15 10 TJ=125°C TJ=-55°C VG S =-3.0V 0 0 1.0 4.0 2.0 3.0 -VDS , DRAIN-TO-SOURCE VOLTAGE (V) 0 5.0 1.5 R DS(on) , NORMALIZED 6 4 2 0 4 8 12 Qg , TOTAL GATE CHARGE (nC) 16 20 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE -VGS , GATE TO SOURCE VOLTAGE (V) VGS=-5V ID=-10A 1.9 8 0 THRESHOLD VOLTAGE 5.0 2.2 VDS=-20V ID=-5A Vth , NORMALIZED GATE-SOURCE 3.0 4.0 2.0 -VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge 10 1.3 TJ=25°C 5 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200