CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM4435AJPT CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * P-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 1 D D D D S S S G 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 4 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM4435AJPT Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous -8 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) -50 2500 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 50 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2005-02 RATING CHARACTERISTIC CURVES ( CHM4435AJPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min -30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = -250 µA -1 VGS=-10V, ID=-8A 17 20 VGS=-4.5V, ID=-5A 27 35 VDS = -15V, ID = -8A 13 mΩ S SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd t on Turn-On Time tr Rise Time t off Turn-Off Time tf Fall Time VDS=-15V, ID=-4.6A VGS=-5V 22 28 7 nC 8 V DD= -15V 12 I D = -1.0A , VGS = -10 V 6 18 110 140 35 70 RGEN= 6 Ω 24 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -2.1A , VGS = 0 V (Note 2) (Note 1) -2.1 A -1.2 V RATING CHARACTERISTIC CURVES ( CHM4435AJPT ) Typical Electrical Characteristics 30 25 20 25 C -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,8,7,6,5V -VGS=4V 15 10 -VGS=3V 5 24 18 12 6 -55 C TJ=125 C 10 1.0 0.5 1.5 2.0 2.5 3 4 5 6 Figure 2. Transfer Characteristics 4 2 0 5 10 15 20 25 30 2.2 1.9 ID=-8A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 Qg, Total Gate Charge (nC) TJ, Junction Temperature( C) Figure 3. Gate Charge Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 Figure 1. Output Characteristics 6 1.2 1 -VGS, Gate-to-Source Voltage (V) 8 1.3 0 3.0 -VDS, Drain-to-Source Voltage (V) VDS=-15V ID=-4.6A 0 VTH, Normalized Gate-Source Threshold Voltage 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) -VGS, Gate to Source Voltage (V) 0 0.0 -25 0 25 50 75 100 125 150 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature