CHENMKO CHT100PT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
CHT100PT
CURRENT 1.1 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-59/SOT-346
FEATURE
* Small surface mounting type. (SC-59/SOT-346)
* High density cell design for low R DS(ON).
* Suitable for high packing density.
* Rugged and reliable.
* High saturation current capability.
* Voltage controlled small signal switch.
(2)
0.95
(3)
1.7~2.1
2.7~3.1
0.95
(1)
0.3~0.51
CONSTRUCTION
1.2~1.9
* N-Channel Enhancement
MARKING
0.89~1.3
* T100
0.085~0.2
D
CIRCUIT
0~0.1
0.3~0.6
3
2.1~2.95
1G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
ID
Dimensions in millimeters
2
SC-59/SOT-346
TA = 25°C unless otherwise noted
CHT100PT
Units
30
V
Gate-Source Voltage - Continuous
±20
V
Maximum Drain Current - Continuous
±1.1
A
- Pulsed
± 4.4
A
500
mW
-55 to 150
°C
PD
Maximum Power Dissipation
TJ,TSTG
Operating and Storage Temperature Range
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
250
K/W
2004-03
RATING CHARACTERISTIC CURVES ( CHT100PT )
Electrical Characteristics T
Symbol
A
= 25°C unless otherwise noted
Parameter
Conditions
Min
30
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
V
TC=125°C
1
µA
10
µA
IGSSF
Gate - Body Leakage, Forward
VGS = 12 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -12 V, VDS = 0 V
-100
nA
3.0
V
ON CHARACTERISTICS
(Note 1)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 A
0.17
VGS = 10 V, ID = 1.0 A
0.24
gFS
Forward Transconductance
VDS = 10V, ID = 1.0 µA
VDS = 10 V , ID = 500 m A
1
1.3
Ω
2.4
S
5.5
nC
DYNAMIC CHARACTERISTICS
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ton
Turn-On Time
tr
toff
Turn-Off Time
tf
VDS = 24 V, VGS = 10 V,
I D = 1.0 A
0.8
1.3
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
pF
150
90
30
VDD = 10 V
ID = 500 mA, VGS = 5.0 V,
RGEN = 50 Ω
10
VDD = 10 V
ID = 500 mA, VGS = 5.0 V,
RGEN = 50 Ω
25
nS
15
nS
45
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
540
mA
ISM
Maximum Pulsed Drain-Source Diode Forward Current
4.0
A
VSD
Drain-Source Diode Forward
Voltage
1.2
V
VGS = 0 V, IF = 1.0 A
RATING CHARACTERISTIC CURVES ( CHT100PT )
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Temperature
3.0
3.0
R DS(ON) , NORMALIZED
VGS = 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.0
1.0
2.5V
0
0
1
2
3
4
V DS , DRAIN-SOURCE VOLTAGE (V)
5
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
4.0
V GS = 4.5V
2.0
I D = 500m A
1.0
V GS = 10V
I D = 1000m A
0
-5 0
-2 5
0
25
50
75
100
T J , JUNCTION T EMPERATURE (°C)
125
150