CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHT100PT CURRENT 1.1 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low R DS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 (1) 0.3~0.51 CONSTRUCTION 1.2~1.9 * N-Channel Enhancement MARKING 0.89~1.3 * T100 0.085~0.2 D CIRCUIT 0~0.1 0.3~0.6 3 2.1~2.95 1G S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGSS ID Dimensions in millimeters 2 SC-59/SOT-346 TA = 25°C unless otherwise noted CHT100PT Units 30 V Gate-Source Voltage - Continuous ±20 V Maximum Drain Current - Continuous ±1.1 A - Pulsed ± 4.4 A 500 mW -55 to 150 °C PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 250 K/W 2004-03 RATING CHARACTERISTIC CURVES ( CHT100PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V V TC=125°C 1 µA 10 µA IGSSF Gate - Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -12 V, VDS = 0 V -100 nA 3.0 V ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 A 0.17 VGS = 10 V, ID = 1.0 A 0.24 gFS Forward Transconductance VDS = 10V, ID = 1.0 µA VDS = 10 V , ID = 500 m A 1 1.3 Ω 2.4 S 5.5 nC DYNAMIC CHARACTERISTICS Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance ton Turn-On Time tr toff Turn-Off Time tf VDS = 24 V, VGS = 10 V, I D = 1.0 A 0.8 1.3 VDS = 10 V, VGS = 0 V, f = 1.0 MHz pF 150 90 30 VDD = 10 V ID = 500 mA, VGS = 5.0 V, RGEN = 50 Ω 10 VDD = 10 V ID = 500 mA, VGS = 5.0 V, RGEN = 50 Ω 25 nS 15 nS 45 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 540 mA ISM Maximum Pulsed Drain-Source Diode Forward Current 4.0 A VSD Drain-Source Diode Forward Voltage 1.2 V VGS = 0 V, IF = 1.0 A RATING CHARACTERISTIC CURVES ( CHT100PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Temperature 3.0 3.0 R DS(ON) , NORMALIZED VGS = 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.0 1.0 2.5V 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 4.0 V GS = 4.5V 2.0 I D = 500m A 1.0 V GS = 10V I D = 1000m A 0 -5 0 -2 5 0 25 50 75 100 T J , JUNCTION T EMPERATURE (°C) 125 150