CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 100 Volts CHM310PT CURRENT 170 mAmpere APPLICATION * Servo motor control. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 CONSTRUCTION (1) 0.3~0.51 * N-Channel Enhancement 1.2~1.9 0.89~1.3 0.085~0.2 0~0.1 0.3~0.6 D (3) CIRCUIT 2.1~2.95 (1) G Dimensions in millimeters S (2) Absolute Maximum Ratings Symbol SC-59/SOT-346 TA = 25°C unless otherwise noted Parameter CHM310PT Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 170 ID mA - Pulsed (Note 1) 680 PD Maximum Power Dissipation (Note 1) TJ Operating Temperature Range -55 to 150 °C TSTG Storage Temperature Range -55 to 150 °C 417 °C/W 300 mW Note : 1. Part mounted on FR-4 board with recommended pad layout. 2. Short duration test pulse used to minimize self-heating effect Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2007-01 RATING CHARACTERISTIC CURVES ( CHM310PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 100 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V 100 nA I GSSF Gate-Body Leakage VGS = 20V,VDS = 0 V +50 nA I GSSR Gate-Body Leakage VGS = -20V, VDS = 0 V -50 nA 2.8 V ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 1 mA 0.8 VGS=4.5V, ID=170mA 5 9 VGS=10V, ID=170mA 4.5 6 VDS =10V, ID = 4.0A Ω mS 80 SWITCHING CHARACTERISTICS Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd VDS=10V, ID=0.22A VGS=10V 1.4 2 nC 0.15 0.2 t on Turn-On Time V DD= 30V tr Rise Time I D = 0.28A , VGS = 10 V 8 t off Turn-Off Time RGEN= 50 Ω 13 tf Fall Time 8 nS 16 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current 115 mA V SD Drain-Source Diode Forward Voltage I S = 115mA , VGS = 0 V 1.4 V RATING CHARACTERISTIC CURVES ( CHM310PT ) Typical Electrical Characteristics Figure 2. ID vs RDS(ON) Characteristics Figure 1. Output Characteristics 0.7 0.6 R DS(on) , NORMALIZED I D , DRAIN CURRENT (A) V G S =1 0 , 7 , 6 , 5 V 0.5 VG S =4 V 0.4 VG S =3 V 0.3 0.2 0.1 0 0 1.0 3.0 4.0 2.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 2.4 VG S =3 V 2.0 VG S =4 V 1.6 1.2 V G S =5 , 6 , 7 , 1 0 V 0.8 0.1 5.0 0.4 0.5 0.6 Figure 4. On-Resistance Variation with Temperature 2.2 1.2 VDS=VGS ID=250uA R DS(on) , NORMALIZED 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE 2.0 1.1 THRESHOLD VOLTAGE 0.3 ID , DRAIN CURRENT (A) Figure 3. Gate Threshold Variation with Temperature Vth , NORMALIZED GATE-SOURCE 0.2 VGS=10V ID=170mA 1.6 1.2 0.8 0.4 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150