CHENMKO ENTERPRISE CO.,LTD CHT2907APT SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage (Max.=60V) . * High saturation current capability. * Voltage controlled small signal switch. .019 (0.50) .041 (1.05) .033 (0.85) * Small surface mounting type. (SOT-23) * High current (Max.=600mA). * Suitable for high packing density. .066 (1.70) .110 (2.80) .082 (2.10) (1) .119 (3.04) .018 (0.30) FEATURE (3) (2) CONSTRUCTION .103 (2.64) .086 (2.20) MARKING .028 (0.70) .020 (0.50) .045 (1.15) .033 (0.85) C (3) CIRCUIT .007 (0.177) * 2F- .002 (0.05) .055 (1.40) .047 (1.20) * PNP Switching Transistor (1) B E (2) SOT-23 Dimensions in inches and (millimeters) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − -60 V VCEO collector-emitter voltage open base − -60 V VEBO emitter-base voltage open collector − -5 V IC collector current (DC) − -600 mA ICM peak collector current − -800 mA IBM peak base current − -200 mA Ptot total power dissipation − 350 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 2002-7 RATING CHARACTERISTIC CURVES ( CHT2907APT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 357 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICBO PARAMETER collector cut-off current CONDITIONS MIN. MAX. UNIT IE = 0; VCB = -60 V − -10 nA IC = 0; VCB = -60 V; Tj = 125 OC − -10 uA IEBO emitter cut-off current IC = 0; VEB = 5 V − -10 nA hFE DC current gain IC = -0.1 mA; VCE = -10V; note 1 35 − IC = -1.0 mA; VCE = -10V IC = -10 mA; VCE =- 10V 50 75 − − IC = -10 mA; VCE = -10V;Ta = -55OC 35 − IC = -150 mA; VCE = -10V 100 300 IC = -150 mA; VCE = -1.0V 50 − IC = -500 mA; VCE = -10V 40 − collector-emitter saturation voltage IC = -150 mA; IB = -15 m A − -400 mV IC = -500 mA; IB = -50 m A − -1.6 V base-emitter saturation voltage IC = -150 mA; IB = -15 mA -0.6 -1.3 V IC = -500 mA; IB = -50 mA − -2.6 V VCEsat VBEsat Cc collector capacitance IE = ie = 0; VCB = - 5 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = ic = 0; VBE = -500 mV; f = 1 MHz − 30 pF fT transition frequency IC = -20 mA; VCE = - 2 0 V; f = 100 MHz 200 − MHz F noise figure IC = 100 µA; VCE = - 5 V; RS = 1 kΩ; − f = 1.0 kHz 4 dB Switching times (between 10% and 90% levels); − 35 ns − 10 ns rise time − 40 ns toff turn-off time − 100 ns ts storage time − 80 ns tf fall time − 30 ns ton turn-on time td delay time tr Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. ICon = -150 mA; IBon = -15mA; IBoff = −15 mA RATING CHARACTERISTIC CURVES ( CHT2907APT ) Total power dissipation Ptot = f (TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF 360 mW 300 Ccb 5 P tot 270 240 210 10 1 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -1 °C 150 TS 5 10 0 5 10 1 5 10 2 10 2 mA 5 10 3 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V 10 3 Ptot max 5 Ptot DC D= tp T V VCB 10 3 MHz tp fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 ΙC RATING CHARACTERISTIC CURVES ( CHT2907APT ) Saturation voltage IC = f (VBEsat , VCEsat) Delay time t d = f (IC) hFE = 10 Rise time tr = f (IC) 10 3 10 3 ns mA ΙC V CE 10 2 t r, t d V BE VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V 5 tr 5 10 2 10 1 td 5 5 10 0 5 10 -2 10 -1 0 0.2 0.4 0.6 0.8 1.0 1.2 V 10 1 0 10 1.6 5 10 1 5 10 2 mA 5 10 3 ΙC VBE sat , VCE sat Storage time tstg = f (IC) Fall time t f = f (IC) 10 3 t stg 10 3 ns tf 5 ns VCC = 30 V 5 h FE = 20 h FE = 10 10 2 5 10 2 h FE = 10 5 h FE = 20 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 ΙC 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 ΙC RATING CHARACTERISTIC CURVES ( CHT2907APT ) DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE 5 150 OC 25 OC 10 2 -50 OC 5 10 1 -1 10 10 0 10 1 10 2 ΙC mA 10 3 RATING CHARACTERISTIC CURVES ( CHT2907APT ) Test circuits Delay and rise time -30 V Input Z 0 = 50ohmS t r < 2ns 200ohmS Osc. t r < 5 ns 1k 0 -16 V 50ohmS 200 ns Storage and fall time -6 V +15 V Input Z 0 = 50ohmS t r < 2 ns 1k 1k 0 -30 V 50ohmS 200 ns Oscillograph: R > 100ohmS , C < 12pF, tr < 5ns 37ohmS Osc. t r < 5 ns