CHENMKO ENTERPRISE CO.,LTD CHT32CZPT SURFACE MOUNT PNP SILICON Transistor VOLTAGE 100 Volts CURRENT 3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 * Suitable for high packing density. * High saturation current capability. 6.50+0.20 0.90+0.05 3.5+0.2 7.0+0.3 3.00+0.10 CONSTRUCTION 0.9+0.2 2.0+0.3 * PNP SILICON Transistor 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.27+0.05 0.01~0.10 0.70+0.10 4.60+0.1 1 1 Base CIRCUIT 3 2 2 Emitter C (3) 3 Collector ( Heat Sink ) (1) B E (2) SC-73/SOT-223 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − VCEO collector-emitter voltage open base − VEBO emitter-base voltage open collector − IC collector current (DC) − -5.0 -3 ICM Peak Collector Current − -6.0 A Ptot total power dissipation − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 -100 -100 V V V A Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 RATING CHARACTERISTIC CURVES ( CHT32CZPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICEO collector cut-off current VCE= -60 V − -300 uA IEBO emitter cut-off current VEB=-5.0V − -1 mA hFE DC current gain IC = -1.0A; VCE = -4V IC = -3.0A; VCE = -4V 25 10 − 100 VCEsat collector-emitter saturation voltage IC=-3.0A,IB=-375mA − -1.2 V VBEON base-emitter saturation voltage IC =- 3.0A; VCE = -4V − -1.8 V fT transition frequency IC = -500mA; VCE = 1 0 V; f = 10 MHz 3.0 − MHz