CHENMKO CHT5946PT

CHENMKO ENTERPRISE CO.,LTD
CHT5946PT
SURFACE MOUNT
NPN Silicon Transistor
VOLTAGE 50Volts
CURRENT 5 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-59/SOT-346
FEATURE
* Surface mount package. (SC-59/SOT-346)
* Suitable for high packing density.
(2)
CONSTRUCTION
0.95
(3)
1.7~2.1
*NPN Silicon Transistor
2.7~3.1
0.95
(1)
0.3~0.51
1.2~1.9
0.89~1.3
0.085~0.2
0~0.1
0.3~0.6
C (3)
CIRCUIT
2.1~2.95
(1) B
E(2)
SC-59/SOT-346
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
80
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
5
A
−
300
total power dissipation
Tamb ≤ 25 °C; note 1
mW
Ptot
Tamb ≤ 25 °C; note 2
−
625
mW
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
− 40
150
°C
Tamb
operating ambient temperature
−55
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2. Maximum power dissipation is calcuming that the device is mounted on
a ceramic substrate measuring 15x15x0.6mm
V
2005-11
RATING CHARACTERISTIC CURVES ( CHT5946PT )
THERMAL CHARACTERISTICS
VALUE
UNIT
Rth j-a
SYMBOL
thermal resistance from junction to ambien
PARAMETER
note 2
CONDITIONS
200
° C/W
Rth j-c
thermal resistance from junction to case
note 2
115
° C/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
VCB = 80V,IE=0
−
0.5
uA
ICEO
collector cut-off current
VCE=40V,IB=0
−
0.5
uA
IEBO
emitter cut-off current
VEB=6V ,IC=0
−
0.5
uA
hFE
DC current gain
IC = 10 mA; VCE = 2V
IC = 500 mA; VCE =2V
200
600
200
560
VCE(sat)
collector-emitter saturation
voltage
IC = 1 0 00 mA; IB = 50 m A
IC = 2 0 00 mA; IB = 100 m A
−
−
0.14
0.24
V
V
VBE(sat)
base-emitter saturation voltage
IC = 2 0 00 mA; IB = 50 m A
−
1.0
V
Cob
collector output capacitance
IE = 0 ; VCB = 1 0 V; f = 1 M H Z
15(typ)
−
pF
fT
transition frequency
IC = -500 mA; VCE = 1 0 V;
400(typ)
−
MHz
Note :
Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHT5946PT )
DC Current Gain vs Collector Current
Collector Emitter Saturation Voltage vs cOllector Current
10000
VCE(sat)䇭䋺䇭COLLECTOR
EMITTER SATURATION
VOLTAGE ( mV )
hFE䇭䋺䇭DC CURRENT GAIN
1000
100
10
0.01
0.1
1
IC/IB = 20
1000
100
10
0.01
10
0.1
1
10
IC䇭䋺䇭COLLECTOR CURRENT ( A )
IC䇭䋺䇭COLLECTOR CURRENT ( A )
Transistion Frequencyvs Emitter Current
Base Emitter Saturation Voltage vs cOllector Current
1000
fT䇭䋺䇭TRANSITION FREQUENCY
( MHz )
VBE(sat)䇭䋺䇭BASE EMITTER
SATURATION VOLTAGE ( mV )
10000
IC/IB = 50
1000
100
0.01
0.1
1
VCE = 10V
100
10
0.01
10
0.1
Output Capactance vs Reverse Biae Voltage
Power Dissipation vs Operating Ambient Temperature
800
1000
f = 1MHz
700
Power Dissipation (mW)
Cob䇭䋺䇭OUTPUT CAPACITANCE
( pF )
1
IE䇭䋺䇭EMITTER CURRENT ( -A )
IC䇭䋺䇭COLLECTOR CURRENT ( A )
100
10
600
500
400
300
200
100
0
1
0
0.1
1
10
VCB䇭䋺䇭REVERSE BIAS VOLTAGE ( V )
100
20
40
60
80
100
120
Operating Ambient Temperature ( °C)
140
160