CHENMKO ENTERPRISE CO.,LTD 2SB1132PT SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small flat package. ( SC-62/SOT-89 ) * High current gain. * Suitable for high packing density. 1.6MAX. 4.6MAX. * Low colloector-emitter saturation. * High saturation current capability. 0.4+0.05 0.8MIN. MARKING * HFE(P):P32 * HFE(Q):Q32 * HFE(R):BAR 4.6MAX. 2.5+0.1 1.7MAX. +0.08 0.45-0.05 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 1 1 Base 2 3 2 Collector ( Heat Sink ) CIRCUIT 3 Emitter 1 B 2 C 3 E SC-62/SOT-89 Dimensions in millimeters LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − -40 V collector-emitter voltage open base − -32 V VEBO emitter-base voltage open collector − -5 V IC collector current (DC) − -1 A PC Collector power dissipation − 0.5 V CBO collector-base voltage V CEO Note2 Tstg Tj storage temperature junction temperature W − 2 −55 +150 °C − 150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 2. When mounted on a 40X40X0.7 mm ceramic board. 2004-03 RATING CHARACTERISTIC ( 2SB1132PT) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL PARAMETER CONDITIONS Typ. MAX. UNIT uA uA V -32 − − − − -0.5 -0.5 − − V -5 − − V VCE=-3V , IC=-0.1A 82 − 390 collector-emitter saturation voltage IC/IB=-500mA/-50mA − -200 -500 Cob collector output capacitance IE = 0; VCB = -10V ; f = 1 MH z − 20 30 pF fT transition frequency IE = 50 mA; VCE = - 5 V ; f = 30 MHz − 150 − MHz MIN. BVCBO BVCEO VEB=-4V VCB=-20V IC =-50uA − − -40 collector-emitter breakdown voltage IC =-1mA BVEBO emitter-base breakdown voltage IE =-50uA hFE DC current transfer ratio VCEsat IEBO ICBO emitter cutoff current collector cut-off current collector-base breakdown voltage Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2. hFE: Classification P: 82 to 180, Q: 120 to 270, R: 180 to 390 mV RATING CHARACTERISTIC CURVES ( 2SB1132PT ) fig2.Collector-emitter saturation voltage VS. collector current fig1.DCcurrent gain VS. collector current (1) 1000 -1 O Ta=25 C hFE-DC CURRENT GAIN hFE-DC CURRENT GAIN -0.5 500 VCE=-3V -1V 200 100 50 -1 -2 -5 -10 -20 -50 -100 O Ta=25 C IC/IB=10 -0.2 -0.1 -0.05 -0.02 -0.01 -1 -2 -5 -200 -500 -1000 IC - COLLECTO CURRENT (mA) 200 100 50 20 -10 -20 -100 -50 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHZ) O Ta=25 C VCE=-5V -5 100 20 10 -0.5 -2.0 -1.5 -1.0 -0.5 -100 IB=0mA O -0.4 -0.8 -1.2 -5 -10 -20 characteristics -2.5 -200 0 -2 fig6.Grounded emitter propagation -300 0 -1 COLLECTOR TO BASE VOLTAGE : VCB (V) -1.6 Ta=25 C -2.0 COLLECTOR-EMITTERVOLTAGE : VCE(V) COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : Ic (mA) -3.0 O Ta=25 C f=1MHZ IE=0A 50 fig5.Grounded emitter output characteristics -3.5 -4.0 -400 -4.5 -5.0 -50 -100 -200 -500 -1000 -2000 fig4.Collector output capacitance VS. collector-base voltage EMITTER CURRENT : IE (mA) -500 -20 I C - COLL ECTOR CURRENT (mA) fig3.Gain bandwidth product VS. emitter current -1 -2 -10 -500 -200 -100 -50 -20 -10 -5 -2 -1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 COLLECTOR-EMITTERVOLTAGE : VCE(V) -1.6