TI TPD4E002

TPD4E002
www.ti.com
SLVS615D – JULY 2006 – REVISED JUNE 2010
QUAD LOW-CAPACITANCE ARRAY WITH ±15-kV ESD PROTECTION
Check for Samples: TPD4E002
FEATURES
APPLICATIONS
•
•
1
•
•
•
•
•
•
•
Four Unidirectional Voltage Suppression
Diodes for use in ESD Protection
I/O Breakdown Voltage, VBR = 6.1 V Min
Low I/O Capacitance (11 pF at 0 V)
Low I/O Leakage Current <100 nA
2.5-A Peak Pulse Current (8/20-ms Pulse)
No Power Supply Routing is Required since
there is no VDD Pin
Very Small Printed Circuit Board (PCB) Area
<2.6 mm2
ESD Protection Exceeds
– ±15-kV Human Body Model (HBM)
– ±15-kV IEC 61000-4-2 Contact Discharge
Where Transient Overvoltage Protection in
ESD-Sensitive Equipment is Required, Such
as:
– Computers
– Printers
– Communication Systems and Cellular
Phones
– Video Equipment
BENEFITS
•
•
•
High ESD Protection Level
High Integration
Suitable for High-Density Boards
DRL PACKAGE
(TOP VIEW)
IO1 1
5 IO4
GND 2
IO2 3
4 IO3
DESCRIPTION/ORDERING INFORMATION
The TPD4E002 is a monolithic array designed to protect up to four lines against ESD transients. Monolithic
circuit design allows superior matching between the channels and reduced crosstalk. This device is ideal for
applications where both reduced line capacitance and board space-saving are required.
ORDERING INFORMATION
PACKAGE (1)
TA
–40°C to 125°C
(1)
(2)
1.6 × 1.6 DRL
Reel of 4000
ORDERABLE PART NUMBER
TPD4E002DRLR
TPD4E002DRL2 (2)
TOP-SIDE MARKING
28S
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
The TPD4E002DRL2 is the same exact device as the TPD4E002DRL. This special orderable offers 180 degree shift in device
orientation in the reel compared to TI standard DRL package orientation in the reel. Refer to the tape and reel information section at the
end of this datasheet for the details on orientation information.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2010, Texas Instruments Incorporated
TPD4E002
SLVS615D – JULY 2006 – REVISED JUNE 2010
www.ti.com
Absolute Maximum Ratings
MIN
VPP
ESD discharge
TJ
Junction temperature
Tstg
Storage temperature range
Top
Operating temperature range
MAX
Human Body Model (HBM)
±15
IEC 61000-4-2 Contact Discharge
±15
UNIT
kV
125
°C
–55
150
°C
–40
125
°C
Peak pulse power
tp = 8/20 µs
35
W
Peak pulse current
tp = 8/20 µs
2.5
A
Thermal Resistance
PARAMETER
RqJA
2
Junction to ambient on printed circuit on recommended pad layout
Submit Documentation Feedback
VALUE
UNIT
220
°C/W
Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TPD4E002
TPD4E002
www.ti.com
SLVS615D – JULY 2006 – REVISED JUNE 2010
Electrical Characteristics
Tamb = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
UNIT
VBR
I/O Breakdown voltage
IR = 1 mA
IRM
I/O Leakage current
VRM = 3 V
aT
Voltage temperature coefficient
45
10–4/°C
C
I/O Capacitance per line
11
pF
2
Ω
Rd
(1)
Dynamic resistance
6.1
MAX
(1)
7.2
V
0.1
mA
Rd is measured under reverse breakdown condition with inrush current in the range 1Amps using pulse technique
TYPICAL CHARACTERISTICS
12.0
Capacitance (pF)
11.5
11.0
10.5
10.0
9.5
9.0
8.5
8.0
–40
0
25
70
85
125
Temperature (ºC)
Figure 1. I/O Capacitance vs Temperature
12.0
Capacitance (pF)
11.5
11.0
10.5
10.0
9.5
9.0
1
2
3
4
5
6
7
8
9
10
Frequency (Mhz)
Figure 2. I/O Capacitance vs Frequency (Typical Values)
Submit Documentation Feedback
Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TPD4E002
3
TPD4E002
SLVS615D – JULY 2006 – REVISED JUNE 2010
www.ti.com
TYPICAL CHARACTERISTICS (continued)
–110.0
–100.0
–90.0
–80.0
–70.0
–60.0
–50.0
–40.0
–30.0
IIN (mA)
–20.0
–10.0
0.00
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
110.0
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0 500m
0 –500m –1.0 –1.5
VIN (V)
Voltage (20 V/div)
Figure 3. Diode Current Across I/O Voltage (Typical Values)
Time (50 ns/div)
Figure 4. ESD Clamp Voltage At I/O Pins: IEC6100-4-2 15 kV Contact Discharge
4
Submit Documentation Feedback
Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TPD4E002
TPD4E002
www.ti.com
SLVS615D – JULY 2006 – REVISED JUNE 2010
3.0
30
2.5
25
2.0
20
Current (A)
1.5
15
1.0
10
PPP (W)
IPP (A)
TYPICAL CHARACTERISTICS (continued)
Power (W)
5
0.5
0.0
0
0
5
10
15
20
25 30 35
Time (µs)
40
45
50
Figure 5. Pulse Waveform (8/20 µs Pulse)
Submit Documentation Feedback
Copyright © 2006–2010, Texas Instruments Incorporated
Product Folder Link(s): TPD4E002
5
PACKAGE MATERIALS INFORMATION
www.ti.com
1-Jul-2010
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
TPD4E002DRLR
Package Package Pins
Type Drawing
SOT
DRL
5
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
4000
180.0
9.2
Pack Materials-Page 1
1.78
B0
(mm)
K0
(mm)
P1
(mm)
1.78
0.69
4.0
W
Pin1
(mm) Quadrant
8.0
Q3
PACKAGE MATERIALS INFORMATION
www.ti.com
1-Jul-2010
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TPD4E002DRLR
SOT
DRL
5
4000
202.0
201.0
28.0
Pack Materials-Page 2
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