TPD4E002 www.ti.com SLVS615D – JULY 2006 – REVISED JUNE 2010 QUAD LOW-CAPACITANCE ARRAY WITH ±15-kV ESD PROTECTION Check for Samples: TPD4E002 FEATURES APPLICATIONS • • 1 • • • • • • • Four Unidirectional Voltage Suppression Diodes for use in ESD Protection I/O Breakdown Voltage, VBR = 6.1 V Min Low I/O Capacitance (11 pF at 0 V) Low I/O Leakage Current <100 nA 2.5-A Peak Pulse Current (8/20-ms Pulse) No Power Supply Routing is Required since there is no VDD Pin Very Small Printed Circuit Board (PCB) Area <2.6 mm2 ESD Protection Exceeds – ±15-kV Human Body Model (HBM) – ±15-kV IEC 61000-4-2 Contact Discharge Where Transient Overvoltage Protection in ESD-Sensitive Equipment is Required, Such as: – Computers – Printers – Communication Systems and Cellular Phones – Video Equipment BENEFITS • • • High ESD Protection Level High Integration Suitable for High-Density Boards DRL PACKAGE (TOP VIEW) IO1 1 5 IO4 GND 2 IO2 3 4 IO3 DESCRIPTION/ORDERING INFORMATION The TPD4E002 is a monolithic array designed to protect up to four lines against ESD transients. Monolithic circuit design allows superior matching between the channels and reduced crosstalk. This device is ideal for applications where both reduced line capacitance and board space-saving are required. ORDERING INFORMATION PACKAGE (1) TA –40°C to 125°C (1) (2) 1.6 × 1.6 DRL Reel of 4000 ORDERABLE PART NUMBER TPD4E002DRLR TPD4E002DRL2 (2) TOP-SIDE MARKING 28S For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. The TPD4E002DRL2 is the same exact device as the TPD4E002DRL. This special orderable offers 180 degree shift in device orientation in the reel compared to TI standard DRL package orientation in the reel. Refer to the tape and reel information section at the end of this datasheet for the details on orientation information. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2006–2010, Texas Instruments Incorporated TPD4E002 SLVS615D – JULY 2006 – REVISED JUNE 2010 www.ti.com Absolute Maximum Ratings MIN VPP ESD discharge TJ Junction temperature Tstg Storage temperature range Top Operating temperature range MAX Human Body Model (HBM) ±15 IEC 61000-4-2 Contact Discharge ±15 UNIT kV 125 °C –55 150 °C –40 125 °C Peak pulse power tp = 8/20 µs 35 W Peak pulse current tp = 8/20 µs 2.5 A Thermal Resistance PARAMETER RqJA 2 Junction to ambient on printed circuit on recommended pad layout Submit Documentation Feedback VALUE UNIT 220 °C/W Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): TPD4E002 TPD4E002 www.ti.com SLVS615D – JULY 2006 – REVISED JUNE 2010 Electrical Characteristics Tamb = 25°C PARAMETER TEST CONDITIONS MIN TYP UNIT VBR I/O Breakdown voltage IR = 1 mA IRM I/O Leakage current VRM = 3 V aT Voltage temperature coefficient 45 10–4/°C C I/O Capacitance per line 11 pF 2 Ω Rd (1) Dynamic resistance 6.1 MAX (1) 7.2 V 0.1 mA Rd is measured under reverse breakdown condition with inrush current in the range 1Amps using pulse technique TYPICAL CHARACTERISTICS 12.0 Capacitance (pF) 11.5 11.0 10.5 10.0 9.5 9.0 8.5 8.0 –40 0 25 70 85 125 Temperature (ºC) Figure 1. I/O Capacitance vs Temperature 12.0 Capacitance (pF) 11.5 11.0 10.5 10.0 9.5 9.0 1 2 3 4 5 6 7 8 9 10 Frequency (Mhz) Figure 2. I/O Capacitance vs Frequency (Typical Values) Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): TPD4E002 3 TPD4E002 SLVS615D – JULY 2006 – REVISED JUNE 2010 www.ti.com TYPICAL CHARACTERISTICS (continued) –110.0 –100.0 –90.0 –80.0 –70.0 –60.0 –50.0 –40.0 –30.0 IIN (mA) –20.0 –10.0 0.00 10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0 110.0 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 500m 0 –500m –1.0 –1.5 VIN (V) Voltage (20 V/div) Figure 3. Diode Current Across I/O Voltage (Typical Values) Time (50 ns/div) Figure 4. ESD Clamp Voltage At I/O Pins: IEC6100-4-2 15 kV Contact Discharge 4 Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): TPD4E002 TPD4E002 www.ti.com SLVS615D – JULY 2006 – REVISED JUNE 2010 3.0 30 2.5 25 2.0 20 Current (A) 1.5 15 1.0 10 PPP (W) IPP (A) TYPICAL CHARACTERISTICS (continued) Power (W) 5 0.5 0.0 0 0 5 10 15 20 25 30 35 Time (µs) 40 45 50 Figure 5. Pulse Waveform (8/20 µs Pulse) Submit Documentation Feedback Copyright © 2006–2010, Texas Instruments Incorporated Product Folder Link(s): TPD4E002 5 PACKAGE MATERIALS INFORMATION www.ti.com 1-Jul-2010 TAPE AND REEL INFORMATION *All dimensions are nominal Device TPD4E002DRLR Package Package Pins Type Drawing SOT DRL 5 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 4000 180.0 9.2 Pack Materials-Page 1 1.78 B0 (mm) K0 (mm) P1 (mm) 1.78 0.69 4.0 W Pin1 (mm) Quadrant 8.0 Q3 PACKAGE MATERIALS INFORMATION www.ti.com 1-Jul-2010 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPD4E002DRLR SOT DRL 5 4000 202.0 201.0 28.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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