NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD Ratings Value Unit V V V mA @ Tamb = 25° 60 60 6 50 0.36 @ Tcase= 25° 1.2 Watts @ Tcase<100° 0.68 200 °C -65 to +200 °C Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation TJ Junction Temperature TStg Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction-ambient 486 °C/ W RthJ-c Thermal Resistance, Junction-case 146 °C/ W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO (*) VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=45 V, IE=0 VCB=45 V, IE=0, Tj=150°C VBE=5.0 V, IC=0 IC=10 mA, IB=0 IC=10 µA, IE=0 IE=10 µA, IC=0 COMSET SEMICONDUCTORS Min Typ Mx Unit 60 60 6 - 10 10 10 1/3 nA µA nA V V V NPN 2N2484 Symbol hFE (*) Ratings Test Condition(s) IC=1 µA, VCE =5 V IC=10 µA, VCE =5 V IC=100 µA, VCE =5 V IC=500 µA, VCE =5 V IC=1mA, VCE =5 V IC=10 mA, VCE =5 V IC=10 µA, VCE =5 V DC Current Gain Tamb = -55° VCE(SAT) VBE Collector-Emitter saturation Voltage Base-Emitter Voltage Symbol fT Ratings Transition frequency hfe Small signal current gain CCBO Collector-Base Capacitance CEBO Emitter-Base Capacitance NF Noise figure IC=1 mA, IB=0.1 mA IC=100 µA, VCE =5 V Test Condition(s) IC=50 µA, VCE= 5 V f= 5 MHz IC=500 µA, VCE= 5 V f= 30 MHz IC=1 mA, VCE=5.0 V f= 1 KHz IE= 0 ,VCB=5 V f = 1MHz IC= 0 ,VEB=0.5 V f = 1MHz f = 100 Hz IC= 0 f = 1 kHz VCE=5.0 V f = 10 kHz Rg = 10 kΩ f = 10 to 10000 Hz Min Typ Mx Unit 30 100 175 200 250 - 200 290 375 430 450 430 500 800 20 - - 0.5 0.2 0.35 0.57 0.7 V Min Typ Mx Unit 15 20 - 60 78 - 150 400 900 - - 3.5 6 pF - 3.5 6 pF - 4 1.8 0.6 10 3 2 dB - 1.8 3 MHz (*) Pulse conditions : tp < 300 µs, δ =1% COMSET SEMICONDUCTORS - 2/3 NPN 2N2484 MECHANICAL DATA CASE TO-18 DIMENSIONS mm A B D E F G H I L Pin 1 : Pin 2 : Pin 3 : 12,7 0,49 5,3 4,9 5,8 2,54 1,2 1,16 45° inches 0,5 0,019 0,208 0,193 0,228 0,1 0,047 0,045 45° Emitter Base Collector Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3