BDV67A, B, C, D NPN SILICON DARLINGTONS POWER TRANSISTORS The BDV67 is epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. The complementary is BDV66A, B, C, D. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current IB Base Current PT Power Dissipation TJ Junction Temperature TS Storage Temperature BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B IC BDV67C BDV67D BDV67A BDV67B ICM BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B @ Tmb = 25° C BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D COMSET SEMICONDUCTORS Value Unit 80 100 120 150 100 120 140 160 V V 5.0 V 16 A 20 0.5 A 200 Watts 150 °C -65 to +150 1/5 BDV67A, B, C, D THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to Mounting Base BDV67A BDV67B BDV67C BDV67D Value Unit 0.625 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO IEBO Ratings Test Condition(s) Collector Cutoff Current Emitter Cutoff Current VCE=40 V BDV67A - - VCE=50 V BDV67B - - VCE=60 V BDV67C - - VCE=75 V BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D - - VBE=5 V Tj=25°C, VCB= VCBO ICBO Min Typ Mx Unit Collector-Base Cutoff Current Tj=150°C, VCB= VCBO COMSET SEMICONDUCTORS - 3 mA 5.0 mA 1 - mA 5 2/5 BDV67A, B, C, D Symbol Ratings Test Condition(s) hFE DC Current Gain VCE=3 V, IC=1 A VCE=3 V, IC=10 A VCE=3 V, IC=16 A VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=40 mA VBE Base-Emitter Voltage(1&2) VCE=3 V, IC=10 A VF Diode forward voltage IF=10 A Cc IE=0 A, VCB=10V ton Switching times VCC=12V, IC=-10 A IB1=-IB2=0.04 A toff fhfe VCE=-3 V, IC=-5 A BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D BDV67A BDV67B BDV67C BDV67D Min Typ M Unit x 1000 - 3000 1000 - - - - 2 V - - 2,5 V - - 3 V - 300 - pF - 1 µs - 3.5 - - 60 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit COMSET SEMICONDUCTORS 3/5 kHz BDV67A, B, C, D MECHANICAL DATA CASE TO-3P (TO247) Pin 1 : Pin 2 : Pin 3 : Base Collector Emitter COMSET SEMICONDUCTORS 4/5 BDV67A, B, C, D Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice COMSET SEMICONDUCTORS 5/5