TI TRF3705

TRF3705
SLWS223A – AUGUST 2011 – REVISED OCTOBER 2011
www.ti.com
300-MHz to 4-GHz Quadrature Modulator
Check for Samples: TRF3705
FEATURES
DESCRIPTION
•
The TRF3705 is a low-noise direct quadrature
modulator, capable of converting complex modulated
signals from baseband or IF directly up to RF. The
TRF3705 is a high-performance, superior-linearity
device that is ideal to up-convert to RF frequencies of
300 MHz (1) through 4 GHz. The modulator is
implemented as a double-balanced mixer.
1
23
•
•
•
•
•
•
•
High Linearity:
– Output IP3: 30 dBm at 1850 MHz
Low Output Noise Floor: –160 dBm/Hz
78-dBc Single-Carrier WCDMA ACPR
at –10-dBm Channel Power
Unadjusted Carrier Suppression: –40 dBm
Unadjusted Sideband Suppression: –45 dBc
Single Supply: 3.3-V Operation
1-bit Gain Step Control
Fast Power-Up/Power-Down
The
RF
output
block
consists
of
a
differential-to-single-ended converter that is capable
of driving a single-ended 50-Ω load. The TRF3705
requires a 0.25-V common-mode voltage for optimum
linearity performance. The TRF3705 also provides a
fast power-down pin that can be used to reduce
power dissipation in TDD applications.
APPLICATIONS
The TRF3705 is available in an RGE-24 VQFN
package.
Cellular Base Station Transmitter
CDMA: IS95, UMTS, CDMA2000, TD-SCDMA
LTE (Long Term Evolution)
TDMA: GSM, EDGE/UWC-136
Multicarrier GSM (MC-GSM)
Wireless MAN Wideband Transceivers
GND
BBIM
BBIP
GND
GND
23
22
21
20
19
Appropriate matching network is required for optimal
performance at 300 MHz.
VCC
(1)
24
•
•
•
•
•
•
PD
1
18
VCC
GND
2
17
GND
LOP
3
16
RFOUT
S
0/90
12
GND
GND
13
11
6
GND
GC
10
GND
BBQP
14
9
5
BBQM
GND
8
GND
GND
15
7
4
GND
LOM
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
TRF3705
SLWS223A – AUGUST 2011 – REVISED OCTOBER 2011
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
AVAILABLE DEVICE OPTIONS (1)
PRODUCT
PACKAGELEAD
PACKAGE
DESIGNATOR
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
TRF3705
RGE-24
RGE
–40°C to +85°C
TRF3705IRGE
(1)
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
TRF3705IRGET
Tape and Reel, 250
TRF3705IRGER
Tape and Reel, 3000
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range (unless otherwise noted).
VALUE
UNIT
Supply voltage range (2)
–0.3 to +6
V
Digital I/O voltage range
–0.3 to VCC +0.5
V
Operating virtual junction temperature range, TJ
–40 to +150
°C
Operating ambient temperature range, TA
–40 to +85
°C
Storage temperature range, Tstg
ESD ratings
(1)
(2)
–65 to +150
°C
Human body model, HBM
4000
V
Charged device model, CDM
250
V
Machine model, MM
200
V
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.
RECOMMENDED OPERATING CONDITIONS
Over operating free-air temperature range (unless otherwise noted).
VCC
Power-supply voltage
MIN
NOM
MAX
3.15
3.3
3.6
MIN
TYP
MAX
UNIT
V
THERMAL CHARACTERISTICS
Over recommended operating free-air temperature range (unless otherwise noted).
PARAMETER (1)
RθJA
Thermal resistance, junction-to-ambient
RθJC
Thermal resistance, junction-to-board
(1)
2
TEST CONDITIONS
High-K board, still air
UNIT
29.4
°C/W
18.6
°C/W
Determined using JEDEC standard JESD-51 with high-K board
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SLWS223A – AUGUST 2011 – REVISED OCTOBER 2011
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THERMAL INFORMATION
TRF3705
THERMAL METRIC (1)
RGE (VQFN)
UNITS
24 PINS
θJA
Junction-to-ambient thermal resistance
38.4
θJCtop
Junction-to-case (top) thermal resistance
42.5
θJB
Junction-to-board thermal resistance
16.6
ψJT
Junction-to-top characterization parameter
0.9
ψJB
Junction-to-board characterization parameter
16.6
θJCbot
Junction-to-case (bottom) thermal resistance
6.6
(1)
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
ELECTRICAL CHARACTERISTICS: GENERAL
Over recommended operating conditions; at power supply = 3.3 V and TA = +25°C, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DC PARAMETERS
ICC
TA = +25°C, device on (PD = low)
306
mA
TA = +25°C, device off (PD = high)
35
μA
LO low frequency
300
MHz
LO high frequency
4000
Total supply current
LO INPUT
fLO
–10
LO input power
MHz
0
+15
dBm
0.25
0.5
V
BASEBAND INPUTS
VCM
I and Q input dc common-mode
voltage
BW
1-dB input frequency bandwidth
ZI
1000
MHz
8
kΩ
Parallel capacitance
4.6
pF
Turn on time
PD = low to 90% final output power
0.2
μs
Turn off time
PD = high to initial output power –30 dB
0.2
μs
Input impedance
Resistance
POWER ON/OFF
DIGITAL INTERFACE
VIH
PD high-level input voltage
VIL
PD low-level input voltage
2
V
0.8
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V
3
TRF3705
SLWS223A – AUGUST 2011 – REVISED OCTOBER 2011
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ELECTRICAL CHARACTERISTICS
Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm,
single-ended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output
matching circuit, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 400 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
–4.7
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
–1.9
dB
GC set low
–0.7
dBm
GC set high
2.1
dBm
GC set low
8.5
dBm
GC set high
9.1
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
26.0
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
25.4
dBm
Measured at fLO + (fBB1± fBB2), GC set low
60.2
dBm
Measured at fLO + (fBB1± fBB2), GC set high
61.9
dBm
–57.4
dBc
–51.6
dBm
Measured at 2 ● LO
–50
dBm
Measured at 3 ● LO
–49
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–166.7
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 ● fBB)
–67
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 ● fBB)
–64
dBc
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
0.2
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
3.0
dB
GC set low
4.2
dBm
GC set high
7.0
dBm
GC set low
13.3
dBm
GC set high
13.9
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
31.5
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
30.8
dBm
Measured at fLO + (fBB1± fBB2), GC set low
73.6
dBm
Measured at fLO + (fBB1± fBB2), GC set high
80.5
dBm
fLO = 750 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
–45.2
dBc
–45.7
dBm
Measured at 2 ● LO
–46
dBm
Measured at 3 ● LO
–53.5
dBm
–159.9
dBm/Hz
Measured at LO frequency
CF
Unadjusted carrier feedthrough
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 ● fBB)
–70
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 ● fBB)
–66
dBc
4
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SLWS223A – AUGUST 2011 – REVISED OCTOBER 2011
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ELECTRICAL CHARACTERISTICS (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm,
single-ended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output
matching circuit, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 900 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
0.3
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
3.1
dB
GC set low
4.3
dBm
GC set high
7.1
dBm
GC set low
13.2
dBm
GC set high
13.7
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
31.7
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
30.9
dBm
Measured at fLO + (fBB1± fBB2), GC set low
71.5
dBm
Measured at fLO + (fBB1± fBB2), GC set high
75.3
dBm
–43.8
dBc
–48.5
dBm
Measured at 2 ● LO
–53
dBm
Measured at 3 ● LO
–50
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–157.9
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 ● fBB)
–80
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 ● fBB)
–65
dBc
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
–0.1
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
2.5
dB
GC set low
3.9
dBm
GC set high
6.5
dBm
GC set low
13.2
dBm
GC set high
13.6
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
32.1
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
30.3
dBm
Measured at fLO + (fBB1± fBB2), GC set low
60.8
dBm
Measured at fLO + (fBB1± fBB2), GC set high
62.0
dBm
fLO = 1840 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
–43.4
dBc
–42.4
dBm
Measured at 2 ● LO
–41
dBm
Measured at 3 ● LO
–53
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–158.8
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 ● fBB)
–69
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 ● fBB)
–80
dBc
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TRF3705
SLWS223A – AUGUST 2011 – REVISED OCTOBER 2011
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ELECTRICAL CHARACTERISTICS (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm,
single-ended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output
matching circuit, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 2140 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
0.1
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
2.9
dB
GC set low
4.1
dBm
GC set high
6.9
dBm
GC set low
13.1
dBm
GC set high
13.5
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
28.6
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
27.6
dBm
Measured at fLO + (fBB1± fBB2), GC set low
65.5
dBm
Measured at fLO + (fBB1± fBB2), GC set high
68.2
dBm
–45.6
dBc
–39.3
dBm
Measured at 2 ● LO
–37
dBm
Measured at 3 ● LO
–46
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–160.0
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 ● fBB)
–61
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 ● fBB)
–60
dBc
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
–0.8
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
2.0
dB
GC set low
3.2
dBm
GC set high
5.6
dBm
GC set low
12.5
dBm
GC set high
12.8
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
28.0
dBm
FfBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
27.2
dBm
Measured at fLO + (fBB1± fBB2), GC set low
67.9
dBm
Measured at fLO + (fBB1± fBB2), GC set high
66.4
dBm
–52.9
dBm
–37.8
dBm
Measured at 2 ● LO
–41
dBm
Measured at 3 ● LO
–42
fLO = 2600 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–160.6
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 ● fBB)
–67
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 ● fBB)
–59
dBc
6
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dBm/Hz
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ELECTRICAL CHARACTERISTICS (continued)
Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm,
single-ended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output
matching circuit, unless otherwise noted.
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
fLO = 3500 MHz
G
POUT
P1dB
IP3
Voltage gain
Output power
Output compression point
Output IP3
IP2
Output IP2
SBS
Unadjusted sideband suppression
Output RMS voltage over input I (or Q) RMS
voltage, GC set low
–1.0
dB
Output RMS voltage over input I (or Q) RMS
voltage, GC set high
1.8
dB
GC set low
3.0
dBm
GC set high
5.8
dBm
GC set low
12.1
dBm
GC set high
12.3
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low
23.8
dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high
25.3
dBm
Measured at fLO + (fBB1± fBB2), GC set low
47.8
dBm
Measured at fLO + (fBB1± fBB2), GC set high
48.6
dBm
–45.2
dBm
–31.6
dBm
Measured at 2 ● LO
–30
dBm
Measured at 3 ● LO
–53
Measured at LO frequency
CF
Unadjusted carrier feedthrough
–160.6
dBm
Output noise floor
DC only to BB inputs; 10-MHz offset from LO
dBm/Hz
HD2BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(2 ● fBB)
–54
dBc
HD3BB
Baseband harmonics
Measured with ±1-MHz tone at 0.5 VPP each
at fLO ±(3 ● fBB)
–50
dBc
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DEVICE INFORMATION
VCC
GND
BBIM
BBIP
GND
GND
24
23
22
21
20
19
RGE PACKAGE
VQFN-24
(TOP VIEW)
PD
1
18
VCC
GND
2
17
GND
LOP
3
16
RFOUT
Thermal Pad
GND
GND
12
13
GND
6
11
GC
GND
GND
10
14
BBQP
5
9
GND
BBQM
GND
8
15
GND
4
7
LOM
PIN FUNCTIONS
PIN
NO.
8
NAME
I/O
DESCRIPTION
1
PD
I
Power-down digital input (high = device off)
2
GND
I
Ground
3
LOP
I
Local oscillator input
4
LOM
I
Local oscillator input
5
GND
I
Ground
Gain control digital input (high = high gain)
6
GC
I
7
GND
—
8
GND
I
Ground
Ground or leave unconnected
9
BBQM
I
In-quadrature input
10
BBQP
I
In-quadrature input
11
GND
I
Ground
12
GND
I
Ground
13
GND
I
Ground
14
GND
I
Ground
15
GND
I
Ground
16
RFOUT
O
RF output
17
GND
I
Ground
18
VCC
I
Power supply
19
GND
I
Ground
20
GND
I
Ground
21
BBIP
I
In-phase input
22
BBIM
I
In-phase input
23
GND
I
Ground
24
VCC
I
Power supply
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TYPICAL CHARACTERISTICS: Single-Tone Baseband
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude =
1-VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
space
10
9
8
7
6
5
4
3
TA = −40°C
TA = 25°C
TA = 85°C
Output Power (dBm)
2
1
0
−1
−2
OUTPUT POWER vs LO FREQUENCY (fLO) AND SUPPLY
VOLTAGE
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
2
1
0
−1
−2
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G003
Figure 1.
Figure 2.
OUTPUT POWER vs LO FREQUENCY (fLO) OVER LO
DRIVE LEVEL
OUTPUT POWER vs LO FREQUENCY (fLO) AND GAIN
SELECT SETTING
10
9
8
7
6
5
4
3
2
1
0
−1
−2
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
Gain Control = Off
Gain Control = On
0
500
G004
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G005
Figure 3.
Figure 4.
OUTPUT POWER vs LO FREQUENCY (fLO) AND
TEMPERATURE AT VCM = 0.5 V
OUTPUT POWER vs BASEBAND VOLTAGE AT 2140 MHz
15
VCM = 0.5 V
TA = −40°C
TA = 25°C
TA = 85°C
LO Frequency = 2140 MHz
10
Output Power (dBm)
9
8
7
6
5
4
3
2
1
0
−1
−2
10
9
8
7
6
5
4
3
2
1
0
−1
−2
10
Output Power (dBm)
10
9
8
7
6
5
4
3
G002
Output Power (dBm)
Output Power (dBm)
Output Power (dBm)
OUTPUT POWER vs LO FREQUENCY (fLO) AND
TEMPERATURE
5
0
−5
−10
−15
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
−20
0.01
G066
Figure 5.
0.1
1
Baseband Voltage Single−Ended (Vpp)
10
G001
Figure 6.
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TYPICAL CHARACTERISTICS: Single-Tone Baseband (continued)
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude =
1-VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
space
17
16
15
14
13
12
11
10
TA = −40°C
TA = 25°C
TA = 85°C
P1dB (dBm)
9
8
7
6
5
P1dB vs LO FREQUENCY (fLO) AND SUPPLY VOLTAGE
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
17
16
15
14
13
12
11
10
9
8
7
6
5
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
500
1000
G006
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G007
Figure 7.
Figure 8.
P1dB vs LO FREQUENCY (fLO) AND LO DRIVE LEVEL
P1dB vs LO FREQUENCY (fLO) AND GAIN SELECT
SETTING
17
16
15
14
13
12
11
10
9
8
7
6
5
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
P1dB (dBm)
P1dB (dBm)
P1dB (dBm)
P1dB vs LO FREQUENCY (fLO) AND TEMPERATURE
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
17
16
15
14
13
12
11
10
9
8
7
6
5
4000
Gain Control = Off
Gain Control = On
0
500
1000
G008
1500 2000 2500
Frequency (MHz)
Figure 9.
3000
3500
4000
G009
Figure 10.
P1dB vs LO FREQUENCY (fLO) AND TEMPERATURE AT VCM = 0.5 V
P1dB (dBm)
17
16
15
14
13
12
11
10
9
8
7
6
5
VCM = 0.5 V
0
500
1000
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G010
Figure 11.
10
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TYPICAL CHARACTERISTICS: Two-Tone Baseband
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
space
OIP3 vs LO FREQUENCY (fLO) AND SUPPLY VOLTAGE
TA = −40°C
TA = 25°C
TA = 85°C
OIP3 (dBm)
36
34
32
30
28
26
24
22
20
18
16
14
12
10
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
36
34
32
30
28
26
24
22
20
18
16
14
12
10
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
500
1000
G011
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G012
Figure 12.
Figure 13.
OIP3 vs LO FREQUENCY (fLO) AND LO DRIVE LEVEL
OIP3 vs LO FREQUENCY (fLO) AND GAIN SELECT
SETTING
36
34
32
30
28
26
24
22
20
18
16
14
12
10
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
OIP3 (dBm)
OIP3 (dBm)
OIP3 (dBm)
OIP3 vs LO FREQUENCY (fLO) AND TEMPERATURE
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
36
34
32
30
28
26
24
22
20
18
16
14
12
10
Gain Control = Off
Gain Control = On
0
500
1000
G013
1500 2000 2500
Frequency (MHz)
Figure 14.
3000
3500
4000
G015
Figure 15.
OIP3 (dBm)
OIP3 vs LO FREQUENCY (fLO) AND TEMPERATURE AT VCM = 0.5 V
36
34
32
30
28
26
24
22
20
18
16
14
12
10
VCM = 0.5 V
0
500
1000
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G014
Figure 16.
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TYPICAL CHARACTERISTICS: Two-Tone Baseband (continued)
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
space
OIP2 vs LO FREQUENCY (fLO) AND SUPPLY VOLTAGE
OIP2 (dBm)
TA = −40°C
TA = 25°C
TA = 85°C
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
500
1000
G016
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G017
Figure 17.
Figure 18.
OIP2 vs LO FREQUENCY (fLO) AND LO DRIVE LEVEL
OIP2 vs LO FREQUENCY (fLO) AND GAIN SELECT
SETTING
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
OIP2 (dBm)
OIP2 (dBm)
OIP2 (dBm)
OIP2 vs LO FREQUENCY (fLO) AND TEMPERATURE
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
Gain Control = Off
Gain Control = On
0
500
1000
G018
1500 2000 2500
Frequency (MHz)
Figure 19.
3000
3500
4000
G020
Figure 20.
OIP2 (dBm)
OIP2 vs LO FREQUENCY (fLO) AND TEMPERATURE AT VCM = 0.5 V
105
100
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
VCM = 0.5 V
0
500
1000
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G019
Figure 21.
12
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TYPICAL CHARACTERISTICS: Two-Tone Baseband (continued)
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
space
Unadjusted Carrier Feedthrough (dBm)
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
UNADJUSTED CARRIER FEEDTHROUGH vs LO
FREQUENCY (fLO) AND SUPPLY VOLTAGE
TA = −40°C
TA = 25°C
TA = 85°C
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
500
1000
G021
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G022
Figure 23.
UNADJUSTED CARRIER FEEDTHROUGH vs LO
FREQUENCY (fLO) AND LO DRIVE LEVEL
UNADJUSTED CARRIER FEEDTHROUGH vs LO
FREQUENCY (fLO) AND GAIN SELECT SETTING
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
Unadjusted Carrier Feedthrough (dBm)
Figure 22.
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
Gain Control = Off
Gain Control = On
0
500
1000
G023
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G025
Figure 24.
Figure 25.
UNADJUSTED CARRIER FEEDTHROUGH vs LO
FREQUENCY (fLO) AND TEMPERATURE AT VCM = 0.5 V
CARRIER FEEDTHROUGH vs LO FREQUENCY (fLO) AND
TEMPERATURE AFTER NULLING AT +25°C; MULTIPLE
DEVICES
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
10
VCM = 0.5 V
0
500
1000
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
Adjusted Carrier Feedthrough (dBm)
Unadjusted Carrier Feedthrough (dBm)
Unadjusted Carrier Feedthrough (dBm)
Unadjusted Carrier Feedthrough (dBm)
UNADJUSTED CARRIER FEEDTHROUGH vs LO
FREQUENCY (fLO) AND TEMPERATURE
4000
Adjusted at TA = 25°C
Device Count = 10
0
−10
TA = −40°C
TA = 25°C
TA = 85°C
−20
−30
−40
−50
−60
−70
−80
−90
−100
0
G024
Figure 26.
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G060
Figure 27.
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TYPICAL CHARACTERISTICS: Two-Tone Baseband (continued)
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
space
Unadjusted Sideband Suppression (dBc)
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
UNADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY (fLO) AND SUPPLY VOLTAGE
TA = −40°C
TA = 25°C
TA = 85°C
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
500
1000
G026
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G027
Figure 28.
Figure 29.
UNADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY (fLO) AND LO DRIVE LEVEL
UNADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY (fLO) AND GAIN SELECT SETTING
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
Unadjusted Sideband Suppression (dBc)
Unadjusted Sideband Suppression (dBc)
Unadjusted Sideband Suppression (dBc)
UNADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY (fLO) AND TEMPERATURE
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
Gain Control = Off
Gain Control = On
0
500
1000
G028
1500 2000 2500
Frequency (MHz)
Figure 30.
3000
3500
4000
G030
Figure 31.
Unadjusted Sideband Suppression (dBc)
UNADJUSTED SIDEBAND SUPPRESSION vs LO FREQUENCY (fLO) AND TEMPERATURE AT VCM = 0.5 V
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
VCM = 0.5 V
0
500
1000
TA = −40°C
TA = 25°C
TA = 85°C
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G029
Figure 32.
14
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TYPICAL CHARACTERISTICS: Two-Tone Baseband, Mid-Band Calibration
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted. Single point adjustment mid-band.
space
ADJUSTED CARRIER FEEDTHROUGH vs LO FREQUENCY
AND TEMPERATURE (750 LTE Band)
ADJUSTED CARRIER FEEDTHROUGH vs LO FREQUENCY
AND TEMPERATURE (GSM900 Band)
−20
−10
Adjusted at 748MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
Adjusted Carrier Feedthrough (dBm)
Adjusted Carrier Feedthrough (dBm)
−10
−40
−50
−60
−70
−80
−90
−100
680
700
720
740
760
780
Frequency (MHz)
800
−20
Adjusted at 942.5MHz − TA = 25°C
−30
−40
−50
−60
−70
−80
−90
−100
870
820
TA = −40°C
TA = 25°C
TA = 85°C
890
910
G036
930
950
970
Frequency (MHz)
990
1010
G037
Figure 33.
Figure 34.
ADJUSTED CARRIER FEEDTHROUGH vs LO FREQUENCY
AND TEMPERATURE (PCS Band)
ADJUSTED CARRIER FEEDTHROUGH vs LO FREQUENCY
AND TEMPERATURE (UMTS Band)
−20
−10
Adjusted at 1960MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
Adjusted Carrier Feedthrough (dBm)
Adjusted Carrier Feedthrough (dBm)
−10
−40
−50
−60
−70
−80
−90
−100
1880
1900
1920
1940 1960 1980
Frequency (MHz)
2000
2020
−20
Adjusted at 2140MHz − TA = 25°C
−30
−40
−50
−60
−70
−80
−90
−100
2060
2040
TA = −40°C
TA = 25°C
TA = 85°C
2080
2100
G038
2120 2140 2160
Frequency (MHz)
2180
2200
2220
G039
Figure 35.
Figure 36.
ADJUSTED CARRIER FEEDTHROUGH vs LO FREQUENCY
AND TEMPERATURE (2.6 GHz LTE Band)
ADJUSTED CARRIER FEEDTHROUGH vs LO FREQUENCY
AND TEMPERATURE (WiMAX/LTE Band)
−20
−10
Adjusted at 2600MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
Adjusted Carrier Feedthrough (dBm)
Adjusted Carrier Feedthrough (dBm)
−10
−40
−50
−60
−70
−80
−90
−100
2500
2525
2550
2575 2600 2625
Frequency (MHz)
2650
2675
2700
−20
Adjusted at 3500MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
−100
3400
G040
Figure 37.
3425
3450
3475 3500 3525
Frequency (MHz)
3550
3575
3600
G041
Figure 38.
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TYPICAL CHARACTERISTICS: Two-Tone Baseband, Mid-Band Calibration (continued)
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted. Single point adjustment mid-band.
space
Adjusted at 748MHz − TA = 25°C
−20
−40
−50
−60
−70
−80
−90
700
720
740
760
780
Frequency (MHz)
800
820
−20
Adjusted at 942.5MHz − TA = 25°C
−40
−50
−60
−70
−80
−90
890
910
930
950
970
Frequency (MHz)
990
1010
G043
Figure 39.
Figure 40.
ADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY AND TEMPERATURE (PCS Band)
ADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY AND TEMPERATURE (UMTS Band)
Adjusted at 1960MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
−100
1880
1900
1920
1940 1960 1980
Frequency (MHz)
2000
2020
−10
−20
Adjusted at 2140MHz − TA = 25°C
−30
−40
−50
−60
−70
−80
−90
−100
2060
2040
TA = −40°C
TA = 25°C
TA = 85°C
2080
2100
G044
2120 2140 2160
Frequency (MHz)
2180
2200
2220
G045
Figure 41.
Figure 42.
ADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY AND TEMPERATURE (2.6 GHz LTE Band)
ADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY AND TEMPERATURE (WiMAX/LTE Band)
−10
−20
Adjusted at 2600MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
−100
2500
2525
2550
2575 2600 2625
Frequency (MHz)
2650
2675
2700
−10
−20
Adjusted at 3500MHz − TA = 25°C
TA = −40°C
TA = 25°C
TA = 85°C
−30
−40
−50
−60
−70
−80
−90
−100
3400
G046
Figure 43.
16
TA = −40°C
TA = 25°C
TA = 85°C
−30
G042
−10
−20
−10
−100
870
Adjusted Sideband Suppression (dBc)
Adjusted Sideband Suppression (dBc)
TA = −40°C
TA = 25°C
TA = 85°C
−30
−100
680
Adjusted Sideband Suppression (dBc)
Adjusted Sideband Suppression (dBc)
−10
ADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY AND TEMPERATURE (GSM900 Band)
Adjusted Sideband Suppression (dBc)
Adjusted Sideband Suppression (dBc)
ADJUSTED SIDEBAND SUPPRESSION vs LO
FREQUENCY AND TEMPERATURE (750 LTE Band)
3425
3450
3475 3500 3525
Frequency (MHz)
3550
3575
3600
G047
Figure 44.
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TYPICAL CHARACTERISTICS: No Baseband
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); and input baseband ports terminated in 50 Ω, unless
otherwise noted.
space
TA = −40°C
TA = 25°C
TA = 85°C
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
RF Output Noise Floor (dBm/Hz)
−140
−142
−144
−146
−148
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
OUTPUT NOISE vs LO FREQUENCY (fLO) AND SUPPLY
VOLTAGE
4000
−140
−142
−144
−146
−148
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
VCC = 3.15 V
VCC = 3.30 V
VCC = 3.45 V
0
500
1000
1500 2000 2500
Frequency (MHz)
G031
3000
3500
4000
G032
Figure 45.
Figure 46.
OUTPUT NOISE vs LO FREQUENCY (fLO) AND LO DRIVE
LEVEL
OUTPUT NOISE vs LO FREQUENCY (fLO) AND GAIN
SELECT SETTING
−140
−142
−144
−146
−148
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
LO Power = −5 dBm
LO Power = 0 dBm
LO Power = 5 dBm
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
RF Output Noise Floor (dBm/Hz)
RF Output Noise Floor (dBm/Hz)
RF Output Noise Floor (dBm/Hz)
OUTPUT NOISE vs LO FREQUENCY (fLO) AND
TEMPERATURE
4000
−140
−142
−144
−146
−148
−150
−152
−154
−156
−158
−160
−162
−164
−166
−168
−170
Gain Control = Off
Gain Control = On
0
500
1000
1500 2000 2500
Frequency (MHz)
G033
Figure 47.
3000
3500
4000
G035
Figure 48.
OUTPUT NOISE vs OUTPUT POWER
RF Output Noise Floor (dBm/Hz)
−144
LO Freq = 948.5 MHz
LO Freq = 1848 MHz
LO Freq = 2167 MHz
−146
−148
−150
−152
−154
−156
−158
−160
−25
−20
−15
−10
−5
0
RF Output Power (dBm)
5
10
G034
Figure 49.
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TYPICAL CHARACTERISTICS: Two-Tone Baseband
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
space
RF HARMONICS vs LO FREQUENCY (fLO)
LO HARMONICS vs LO FREQUENCY (fLO)
10
10
RF 2nd Harmonic
RF 3rd Harmonic
RF 4th Harmonic
0
−10
−20
LO Harmonic (dBm)
RF Harmonic (dBc)
−10
−30
−40
−50
−60
−70
−80
−20
−30
−40
−50
−60
−70
−80
−90
−90
−100
−100
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
0
500
1000
1500 2000 2500
Frequency (MHz)
G048
3000
3500
4000
G049
Figure 50.
Figure 51.
NOMINAL CURRENT CONSUMPTION DISTRIBUTION
CURRENT CONSUMPTION DISTRIBUTION OVER
TEMPERATURE
40
35
30
25
20
15
10
5
0
40
Mean =306.4 mA
StDev = 4.4
Vcc = 3.3 V
TA = 25°C
35
30
Distribution (%)
60
55
50
45
Distribution (%)
LO 2nd Harmonic
LO 3rd Harmonic
LO 4th Harmonic
0
Mean =303.8 mA
StDev = 6.9
Vcc = 3.3 V
25
20
15
10
5
290
295
300
305
310
Total Icc (mA)
315
320
0
325
290
295
300
G065
Figure 52.
305
310
Total Icc (mA)
315
320
325
G063
Figure 53.
CURRENT CONSUMPTION DISTRIBUTION OVER VCC
40
35
Distribution (%)
30
Mean =304.2 mA
StDev = 5.1
TA = 25°C
25
20
15
10
5
0
290
295
300
305
310
Total Icc (mA)
315
320
325
G064
Figure 54.
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TYPICAL CHARACTERISTICS: Two-Tone Baseband (continued)
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
space
OIP3 DISTRIBUTION AT fLO = 2140 MHz
OIP2 DISTRIBUTION AT fLO = 2140 MHz
50
45
30
Mean = 28.6 dBm
StDev = 0.4
25
35
Distribution (%)
Distribution (%)
40
30
25
20
15
Mean = 65.5 dBm
StDev = 0.8
20
15
10
10
5
5
0
27.5
28
28.5
29
29.5
OIP3 (dBm)
30
0
30.5
G050
62.5 63 63.5 64 64.5 65 65.5 66 66.5 67 67.5 68
OIP2 (dBm)
G051
Figure 55.
Figure 56.
P1dB DISTRIBUTION AT fLO = 2140 MHz, fBB = 5.5 MHz
UNADJUSTED SIDEBAND SUPPRESSION DISTRIBUTION
AT fLO = 2140 MHz
40
35
30
Mean = 13.1 dBm
StDev = 0.1
25
Mean = −45.6 dBc
StDev = 1.4
Distribution (%)
Distribution (%)
30
25
20
15
20
15
10
10
5
5
0
12.8
12.9
13
13.1
13.2
P1dB (dBm)
13.3
13.4
0
13.5
G052
−52 −51 −50 −49 −48 −47 −46 −45 −44 −43 −42 −41
Unadjusted Sideband Suppression (dBc)
G053
Figure 57.
Figure 58.
UNADJUSTED CARRIER FEEDTHROUGH DISTRIBUTION AT fLO = 2140 MHz
45
40
Mean = −39.3 dBm
StDev = 0.8
Distribution (%)
35
30
25
20
15
10
5
0
−43
−42
−41
−40
−39
−38
−37
Unadjusted Carrier Feedthrough (dBm)
−36
G054
Figure 59.
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TYPICAL CHARACTERISTICS: Two-Tone Baseband (continued)
VCC = 3.3 V; TA = +25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q
amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless
otherwise noted.
space
OIP3 DISTRIBUTION AT fLO = 900 MHz
OIP2 DISTRIBUTION AT fLO = 900 MHz
45
50
45
Mean = 31.7 dBm
StDev = 0.2
40
35
35
Distribution (%)
Distribution (%)
40
30
25
20
15
30
25
20
15
10
10
5
5
0
31.2
31.4
31.6
31.8
32
OIP3 (dBm)
32.2
0
32.4
69
69.5
70
70.5
G055
71 71.5 72
OIP2 (dBm)
72.5
73
73.5
74
G056
Figure 60.
Figure 61.
P1dB DISTRIBUTION AT fLO = 900 MHz, fBB = 5.5 MHz
UNADJUSTED SIDEBAND SUPPRESSION DISTRIBUTION
AT fLO = 900 MHz
55
50
45
50
Mean = 13.2 dBm
StDev = 0.1
45
Distribution (%)
35
30
25
20
35
30
25
20
15
15
10
10
5
5
0
Mean = −43.8 dBc
StDev = 0.9
40
40
Distribution (%)
Mean = 71.5 dBm
StDev = 0.5
12.9
13
13.1
13.2
13.3
P1dB (dBm)
13.4
13.5
0
13.6
−48
G057
−47 −46 −45 −44 −43 −42 −41
Unadjusted Sideband Suppression (dBc)
Figure 62.
−40
G058
Figure 63.
UNADJUSTED CARRIER FEEDTHROUGH DISTRIBUTION AT fLO = 900 MHz
50
45
Mean = −48.5 dBm
StDev = 4.9
Distribution (%)
40
35
30
25
20
15
10
5
0
−85 −80 −75 −70 −65 −60 −55 −50 −45 −40 −35
Unadjusted Carrier Feedthrough (dBm)
G059
Figure 64.
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APPLICATION INFORMATION
Application Schematic
Figure 65 shows a typical TRF3705 application schematic.
BBI
GND
GND
20
19
BBIP
BBIM
21
GND
22
15
5
14
6
13
GND
RFOUT
GND
6.8 pF
RF
Output
0.2 pF
GND
GND
GND
GND
GND
49.9 W
VCC
12
4
7
GC
Thermal Pad
11
GND
16
BBQP
49.9 W
3
10
LOM
17
BBQM
LOP
2
9
GND
18
GND
LO
Input
49.9 W
1
8
PD
23
24
VCC
49.9 W
49.9 W
BBQ
Figure 65. Typical Application Circuit
Power Supply and Grounding
The TRF3705 is powered by supplying a nominal 3.3 V to pins 18 and 24. These supplies can be tied together
and sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin.
Ground pin connections should have at least one ground via close to each ground pin to minimize ground
inductance. The PowerPAD™ must be tied to ground, preferably with the recommended ground via pattern to
provide a good thermal conduction path to the alternate side of the board and to provide a good RF ground for
the device. (Refer to PCB Design Guidelines for additional information.)
Baseband Inputs
The baseband inputs consist of the in-phase signal (I) and the Quadrature-phase signal (Q). The I and Q lines
are differential lines that are driven in quadrature. The nominal drive level is 1-VPP differential on each branch.
The baseband lines are nominally biased at 0.25-V common-mode voltage (VCM); however, the device can
operate with a VCM in the range of 0 V to 0.5 V. The baseband input lines are normally terminated in 50 Ω,
though it is possible to modify this value if necessary to match to an external filter load impedance requirement.
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LO Input
The LO inputs can be driven either single-ended or differentially. There is no significant performance difference
between either option with the exception of the sideband suppression. If driven single-ended, either input can be
used, but LOP (pin 3) is recommended for best broadband performance of sideband suppression. When driving
in single-ended configuration, simply ac-couple the unused port and terminate in 50 Ω. The comparison of the
sideband suppression performance is shown in Figure 66 for driving the LO single-ended from either pin and for
driving the LO input differentially.
0
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
Unadjusted SBS (dB)
−10
LOP_SE
LOM_SE
LO_Diff
−20
−30
−40
−50
−60
0
500
1000
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G067
Figure 66. Unadjusted Sideband Suppression (SBS) vs LO Drive Options
RF Output
The RF output must be ac-coupled and can drive a 50-Ω load. The suggested output match provides the best
broadband performance across the frequency range of the device. It is possible to modify the output match to
optimize performance within a selected band if needed. The optimized matching circuits are to match the RF
output impedances to 50 Ω.
Figure 67 shows a slightly better OIP3 performance at the frequency above 1850 MHz with an 0.2-pF matching
capacitor.
34
32
30
28
OIP3 (dBm)
26
24
22
20
18
16
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
14
12
10
0
500
1000
With 0.2 pF cap
Without 0.2 pF cap
1500 2000 2500
Frequency (MHz)
3000
3500
4000
G068
Figure 67. OIP3 with and without a Shunt 0.2-pF Matching Capacitor at the RF Port
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350-MHz Operation
A different matching circuit, as shown in Figure 68, could also be applied to improve the performance for the
frequency from 300 MHz to 400 MHz.
PD
LO
Input
180 pF 40 nH
GND
LOP
2.2 pF
LOM
49.9 W
GND
GC
1
18
2
17
3
16
4
15
5
14
6
13
VCC
GND
39 pF
RF
Output
RFOUT
GND
18 pF
GND
GND
Figure 68. Matching Components for Operation Centered at 350 MHz
Figure 69 and Figure 70 show a slight improvement in OIP3 performance at frequencies above 1850 MHz with
an 0.2-pF matching capacitor.
40
4
TA = −40°C
TA = 25°C
TA = 85°C
2
35
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
TA = −40°C
TA = 25°C
TA = 85°C
30
OIP3 (dBm)
Output Power (dBm)
0
−2
−4
25
20
−6
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
−8
−10
200
250
300
350
400
Frequency (MHz)
450
15
500
10
200
250
300
350
400
Frequency (MHz)
450
G069
Figure 69. Output Power with 350-MHz Matching
Circuit
500
G070
Figure 70. OIP3 with 350-MHz Matching Circuit
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DAC to Modulator Interface Network
For optimum linearity and dynamic range, a digital-to-analog converter (DAC) can interface directly with the
TRF3705 modulator. It is imperative that the common-mode voltage of the DAC and the modulator baseband
inputs be properly maintained. With the proper interface network, the common-mode voltage of the DAC can be
translated to the proper common-mode voltage of the modulator. The TRF3705 common-mode voltage is
typically 0.25 V, and is ideally suited to interface with the DAC3482/3484 (DAC348x) family because the
common-mode voltages of both devices are the same; there is no translation network required. The interface
network is shown in Figure 71.
LO
50 W
50 W
50 W
50 W
DAC348x
0/90
50 W
50 W
50 W
50 W
S
TRF3705
Figure 71. DAC348x Interface with the TRF3705 Modulator
The DAC348x requires a load resistor of 25 Ω per branch to maintain its optimum voltage swing of 1-VPP
differential with a 20-mA max current setting. The load of the DAC is separated into two parallel 50-Ω resistors
placed on the input and output side of the low-pass filter. This configuration provides the proper resistive load to
the DAC while also providing a convenient 50-Ω source and load termination for the filter.
DAC348x with TRF3705 Modulator Performance
The combination of the DAC348x driving the TRF3705 modulator yields excellent system parameters suitable for
high-performance applications. As an example, the following sections illustrate the typical modulated adjacent
channel power ratio (ACPR) for common telecom standards and bands. These measurements were taken on the
DAC348x evaluation board.
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WCDMA
The adjacent channel power ratio (ACPR) performance using a single-carrier WCDMA signal in the UMTS band
is shown in Figure 72.
Figure 72. Single-Carrier WCDMA ACPR, IF = 30 MHz, LO Frequency = 2110 MHz
A marginal improvement in OIP3 and output noise performance can be observed by increasing the LO drive
power, resulting in slightly improved ACPR performance. The ACPR performance versus LO drive level is plotted
in Figure 73 across common frequencies to illustrate the amount of improvement that is possible.
−75
VCM = 0.25 V
VCC = 3.3 V
LO = 0 dBm
GC = Off
Adjacent Channel Power ratio (dBc)
−76
748 MHz
942.5 MHz
1960 MHz
2140 MHz
2600 MHz
−77
−78
−79
−80
−81
−5
0
5
Frequency (MHz)
10
15
G071
Figure 73. Single-Carrier WCDMA ACPR Performance vs LO Power
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LTE
ACPR performance using a 10 MHz LTE signal in the 700-MHz band is shown in Figure 74.
Figure 74. 10 MHz LTE ACPR, IF = 30 MHz, LO Frequency = 718 MHz
MC-GSM
ACPR performance using a four-carrier MC-GSM signal in the 1800-MHz band is shown in Figure 75.
Figure 75. Four-Carrier MC-GSM, IF = 30 MHz ACPR, LO Frequency = 1812 MHz
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DEFINITION OF SPECIFICATIONS
Carrier Feedthrough
This specification measures the power of the local oscillator component that is present at the output spectrum of
the modulator. The performance depends on the dc offset balance within the baseband input lines. Ideally, if all
of the baseband lines were perfectly matched, the carrier (that is, the LO) would be naturally suppressed;
however, small dc offset imbalances within the device allow some of the LO component to feed through to the
output. This parameter is expressed as an absolute power in dBm, and is independent of the RF output power
and the injected LO input power.
It is possible to adjust the baseband dc offset balance to suppress the output carrier component. Devices such
as the DAC348x DAC family have dc offset adjustment capabilities specifically for this function. The Adjusted
Carrier Feedthrough graphs (see Figure 33 through Figure 38) optimize the performance at the center of the
band at room temperature. Then, with the adjusted dc offset values held constant, the parameter is measured
over the frequency band and across the temperature extremes. The typical performance plots provide an
indication of how well the adjusted carrier suppression can be maintained over frequency and temperature with
only one calibration point.
Sideband Suppression
This specification measures the suppression of the undesired sideband at the output of the modulator relative to
the desired sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectly
matched, the undesired sideband (or image) would be naturally suppressed. Amplitude and phase imbalance in
the I and Q branches result in the increase of the undesired sideband. This parameter is measured in dBc
relative to the desired sideband.
It is possible to adjust the relative amplitude and phase balance within the baseband lines to suppress the
unwanted sideband. Devices such as the DAC348x DAC family have amplitude and phase adjustment control
specifically for this function. The Adjusted Sideband Suppression graphs (refer to Figure 39 through Figure 44)
optimize the performance at the center of the band at room temperature. Then, with the adjusted amplitude and
phase values held constant, the parameter is measured over the frequency band and across the temperature
extremes. The performance plots provide an indication of how well the adjusted sideband suppression can be
maintained over frequency and temperature with only one calibration point.
Output Noise
The output noise specifies the absolute noise power density that is output from the RFOUT pin (pin 16). This
parameter is expressed in dBm/Hz. This parameter, in conjunction with the OIP3 specification, indicates the
dynamic range of the device. In general, at high output signal levels the performance is limited by the linearity of
the device; at low output levels, on the other hand, the performance is limited by noise. As a result of the higher
gain and output power of the TRF3705 compared to earlier devices, it is expected that the noise density is
slightly higher as well. With its increased gain and high OIP3 performance, the overall dynamic range of the
TRF3705 is maintained at exceptional levels.
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Definition of Terms
A simulated output spectrum with two tones is shown in Figure 76, with definitions of various terms used in this
data sheet.
Second
Order IM Third
Order IM
Desired
Signal
Unwanted
Sideband
f1
2f 2
=
LO
H
)+
ird
1
f Th
f BB
+
B2
(f B
=
H
nd
LO
co
+
f Se 2
f BB LO
=
+
f2
1
f
2
f BB LO
= 2f 1
)+
f1
1
f BB
=
B2
(f B
1
f BB
LO f BB2
-
LO
=
L
=
=
nd
L
co
ird
f Th
f Se
B1
B2
LO
LS
LS
fBBn = Baseband frequency
fN = RF frequency
fThirdH/L = Third-order intermodulation product frequency (high side/low side)
fSecondH/L = Second-order intermodulation product frequency (high side/low side)
LO = Local Oscillator frequency
LSBn = Lower sideband frequency
Figure 76. Graphical Illustration of Common Terms
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EVALUATION BOARD
Populated RoHS-compliant evaluation boards are available for testing the TRF3705 as a stand-alone device.
Contact your local TI representative for information on ordering these evaluation modules, or see the TRF3705
product folder on the TI website. In addition, the TRF3705 can be evaluated with the DAC348x (quad/dual 16-bit,
1.25GSPS) EVM driving the baseband inputs through a seamless interface at 0.25V common-mode voltage.
PCB Design Guidelines
The TRF3705 device is fitted with a ground slug on the back of the package that must be soldered to the printed
circuit board (PCB) ground with adequate ground vias to ensure a good thermal and electrical connection. The
recommended via pattern and ground pad dimensions are shown in Figure 77. The recommended via diameter
is 10 mils (0.10 in or 0,25 mm). The ground pins of the device can be directly tied to the ground slug pad for a
low-inductance path to ground. Additional ground vias may be added if space allows.
Æ 0,254
0,508
1,16
2,45
2,45
0,508
1,16
Note:
Dimensions are in millimeters (mm).
Figure 77. PCB Ground Via Layout Guide
Decoupling capacitors at each of the supply pins are strongly recommended. The value of these capacitors
should be chosen to provide a low-impedance RF path to ground at the frequency of operation. Typically, the
value of these capacitors is approximately 10 pF or lower.
The device exhibits symmetry with respect to the quadrature input paths. It is recommended that the PCB layout
maintain this symmetry in order to ensure that the quadrature balance of the device is not impaired. The I/Q input
traces should be routed as differential pairs and the respective lengths all kept equal to each other. On the RF
traces, maintain proper trace widths to keep the characteristic impedance of the RF traces at a nominal 50 Ω.
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Evaluation Board/Kit Important Notice
Texas Instruments (TI) provides the enclosed product(s) under the following conditions:
This evaluation board/kit is intended for use for ENGINEERING DEVELOPMENT, DEMONSTRATION, OR EVALUATION PURPOSES
ONLY and is not considered by TI to be a finished end-product fit for general consumer use. Persons handling the product(s) must have
electronics training and observe good engineering practice standards. As such, the goods being provided are not intended to be complete
in terms of required design-, marketing-, and/or manufacturing-related protective considerations, including product safety and environmental
measures typically found in end products that incorporate such semiconductor components or circuit boards. This evaluation board/kit does
not fall within the scope of the European Union directives regarding electromagnetic compatibility, restricted substances (RoHS), recycling
(WEEE), FCC, CE or UL, and therefore may not meet the technical requirements of these directives or other related directives.
Should this evaluation board/kit not meet the specifications indicated in the User’s Guide, the board/kit may be returned within 30 days from
the date of delivery for a full refund. THE FOREGOING WARRANTY IS THE EXCLUSIVE WARRANTY MADE BY SELLER TO BUYER
AND IS IN LIEU OF ALL OTHER WARRANTIES, EXPRESSED, IMPLIED, OR STATUTORY, INCLUDING ANY WARRANTY OF
MERCHANTABILITY OR FITNESS FOR ANY PARTICULAR PURPOSE.
The user assumes all responsibility and liability for proper and safe handling of the goods. Further, the user indemnifies TI from all claims
arising from the handling or use of the goods. Due to the open construction of the product, it is the user’s responsibility to take any and all
appropriate precautions with regard to electrostatic discharge.
EXCEPT TO THE EXTENT OF THE INDEMNITY SET FORTH ABOVE, NEITHER PARTY SHALL BE LIABLE TO THE OTHER FOR ANY
INDIRECT, SPECIAL, INCIDENTAL, OR CONSEQUENTIAL DAMAGES.
TI currently deals with a variety of customers for products, and therefore our arrangement with the user is not exclusive.
TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or
services described herein.
Please read the User’s Guide and, specifically, the Warnings and Restrictions notice in the User’s Guide prior to handling the product. This
notice contains important safety information about temperatures and voltages. For additional information on TI’s environmental and/or
safety programs, please contact the TI application engineer or visit www.ti.com/esh.
No license is granted under any patent right or other intellectual property right of TI covering or relating to any machine, process, or
combination in which such TI products or services might be or are used.
FCC Warning
This evaluation board/kit is intended for use for ENGINEERING DEVELOPMENT, DEMONSTRATION, OR EVALUATION PURPOSES
ONLY and is not considered by TI to be a finished end-product fit for general consumer use. It generates, uses, and can radiate radio
frequency energy and has not been tested for compliance with the limits of computing devices pursuant to part 15 of FCC rules, which are
designed to provide reasonable protection against radio frequency interference. Operation of this equipment in other environments may
cause interference with radio communications, in which case the user at his own expense will be required to take whatever measures may
be required to correct this interference.
EVM Warnings and Restrictions
It is important to operate this EVM within the input voltage range of 0 V to 3.6 V and the output voltage range of 0 V to 3.6 V.
Exceeding the specified input range may cause unexpected operation and/or irreversible damage to the EVM. If there are questions
concerning the input range, please contact a TI field representative prior to connecting the input power.
Applying loads outside of the specified output range may result in unintended operation and/or possible permanent damage to the EVM.
Please consult the EVM User's Guide prior to connecting any load to the EVM output. If there is uncertainty as to the load specification,
please contact a TI field representative.
During normal operation, some circuit components may have case temperatures greater than 55° C. The EVM is designed to operate
properly with certain components above 55° C as long as the input and output ranges are maintained. These components include but are
not limited to linear regulators, switching transistors, pass transistors, and current sense resistors. These types of devices can be identified
using the EVM schematic located in the EVM User's Guide. When placing measurement probes near these devices during operation,
please be aware that these devices may be very warm to the touch.
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
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PACKAGE OPTION ADDENDUM
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27-Oct-2011
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
TRF3705IRGER
ACTIVE
VQFN
RGE
24
3000
Green (RoHS
& no Sb/Br)
CU NIPDAUAGLevel-2-260C-1 YEAR
TRF3705IRGET
ACTIVE
VQFN
RGE
24
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAGLevel-2-260C-1 YEAR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Feb-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TRF3705IRGER
VQFN
RGE
24
3000
330.0
12.4
4.3
4.3
1.5
8.0
12.0
Q2
TRF3705IRGET
VQFN
RGE
24
250
330.0
12.4
4.3
4.3
1.5
8.0
12.0
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Feb-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TRF3705IRGER
VQFN
RGE
24
3000
338.1
338.1
20.6
TRF3705IRGET
VQFN
RGE
24
250
338.1
338.1
20.6
Pack Materials-Page 2
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