EPIGAP ELC-635-14-3

LED - Chip
ELС-635-14-3
Preliminary
10.04.2007
rev. 04/07
Radiation
Type
Technology
Electrodes
Red
Standard
AlInGaP/GaAs
P (anode) up
typ. dimensions (µm)
310
Ø120
typ. thickness
260 (±20) µm
cathode
gold alloy, 0.5 µm
anode
gold alloy, 1.5 µm
LED-02
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Typ
Max
Unit
2.0
2.5
V
Forward voltage
IF = 20 mA
VF
Reverse voltage
IR = 10 µA
VR
Radiant power1
IF = 20 mA
Φe
1.3
mW
Radiant power2
IF = 20 mA
Φe
2.5
mW
Luminous intensity1
IF = 20 mA
IV
55
70
mcd
Peak wavelength
IF = 20 mA
λP
630
635
Dominant wavelength
IF = 20 mA
λD
626
nm
Spectral bandwidth at 50%
IF = 20 mA
∆λ0.5
18
nm
5
V
640
nm
1
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
2
Labeling
Type
Lot N°
ΙV(typ) [mcd]
VF(typ) [V]
Quantity
ELС-635-14-3
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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