LED - Chip ELС-935-17 Preliminary 10.04.2007 rev. 05/06 Radiation Type Technology Electrodes Infrared DH AlGaAs/GaAs P (anode) up typ. dimensions (µm) 360 120 typ. thickness 260 (±20) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm, dotted, 25% covered LED-14 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.2 1.4 V Forward voltage IF = 20 mA VF Reverse voltage IR = 100 µA VR 5 Radiant power* IF = 20 mA Φe 1.2 1.7 mW Radiant power* IF = 50 mA Φe 3.0 4.2 mW Peak wavelength IF = 20 mA λp 920 935 Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 50 nm Switching time IF = 20 mA tr, tf 600 ns V 950 nm * Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-935-17 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1