LED - Chip ELC-1020-28-1 discontinued 10.04.2007 rev. 04/06 Radiation Type Technology Electrodes Infrared MQW InGaAs/GaAs N (cathode) up 460 typ. dimensions (µm) 360 300 typ. thickness 260 (±20) µm cathode gold alloy, 1.5 µm anode gold alloy, 1.5 µm, solderable PD-02 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.2 1.4 V Forward voltage IF = 100 mA VF Reverse voltage IR = 10 µA VR 10 Radiant power1 IF = 100 mA Φe 0.75 Radiant power2 IF = 100 mA Φe Peak wavelength IF = 100 mA λp Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 80 nm Switching time IF = 100 mA tr, tf 10 ns 1 2 V 1000 1.5 mW 3.0 mW 1020 1050 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Lot N° Type Φe(typ) [mW] VF(typ) [V] Quantity ELС-1020-28-1 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1