EPIGAP ELC-1550-17

LED - Chip
ELC-1550-17
Preliminary
10.04.2007
rev. 02/06
Radiation
Type
Technology
Electrodes
Infrared
MQW
InGaAs/InP
P (anode) up
typ. dimensions (µm)
360
300
typ. thickness
260 µm
360
anode
gold alloy, 1.5 µm
R
cathode
6
11
gold alloy, 0.5 µm
LED-11
Maximum Ratings
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Forward current (DC)
Peak forward current
tP ≤ 50 µs,
= 1/2
t P/T
Min
Max
Unit
IF
100
mA
IFM
200
mA
Typ
Max
Unit
Symbol
Typ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
conditions
Symbol
Min
Forward voltage
IF = 20 mA
VF
0.75
0.9
V
Forward voltage
IF = 100 mA
VF
0.85
1.0
V
Reverse voltage
IR = 100 µA
VR
5
Radiant power1
IF = 20 mA
Φe
0.47
0.7
mW
Radiant power1
IF = 100 mA
Φe
1.7
2.5
mW
Radiant power2
IF = 100 mA
Φe
5.0
mW
Peak wavelength
IF = 100 mA
λp
Spectral bandwidth at 50%
IF = 100 mA
∆λ0.5
130
nm
Switching time
IF = 100 mA
tr, tf
10
ns
1
2
1530
V
1550
1570
nm
Measured on bare chip on TO-18 header with EPIGAP equipment
Measured on epoxy covered chip on TO-18 header with EPIGAP equipment
Labeling
Type
Lot N°
Φe(typ) [mW]
VF(typ) [V]
Quantity
ELС-1550-17
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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