LED - Chip ELC-1550-17 Preliminary 10.04.2007 rev. 02/06 Radiation Type Technology Electrodes Infrared MQW InGaAs/InP P (anode) up typ. dimensions (µm) 360 300 typ. thickness 260 µm 360 anode gold alloy, 1.5 µm R cathode 6 11 gold alloy, 0.5 µm LED-11 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward current (DC) Peak forward current tP ≤ 50 µs, = 1/2 t P/T Min Max Unit IF 100 mA IFM 200 mA Typ Max Unit Symbol Typ Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Forward voltage IF = 20 mA VF 0.75 0.9 V Forward voltage IF = 100 mA VF 0.85 1.0 V Reverse voltage IR = 100 µA VR 5 Radiant power1 IF = 20 mA Φe 0.47 0.7 mW Radiant power1 IF = 100 mA Φe 1.7 2.5 mW Radiant power2 IF = 100 mA Φe 5.0 mW Peak wavelength IF = 100 mA λp Spectral bandwidth at 50% IF = 100 mA ∆λ0.5 130 nm Switching time IF = 100 mA tr, tf 10 ns 1 2 1530 V 1550 1570 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-1550-17 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1