LED - Chip ELС-595-15 Preliminary 10.04.2007 rev. 02/06 Radiation Type Technology Electrodes Yellow Standard AlInGaP/GaAs P (anode) up typ. dimensions (µm) 325 Ø120 typ. thickness 260 (±20) µm cathode gold alloy, 1.5 µm anode gold alloy, 0.5 µm LED-03 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 2.0 2.3 V Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power1 IF = 20 mA Φe 0.5 Radiant power2 IF = 20 mA Φe Luminous intensity1 IF = 20 mA IV Luminous intensity2 IF = 20 mA IV Peak wavelength IF = 20 mA λP Dominant wavelength IF = 20 mA λD 592 nm Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 17 nm Switching time IF = 20 mA tr, tf 20 ns 1 2 V 75 592 0.7 mW 1.2 mW 110 mcd 185 mcd 595 598 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° ΙV(typ) [mcd] VF(typ) [V] Quantity ELС-595-15 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1