LED - Chip ELC-905-17 Preliminary 10.04.2007 rev. 04/06 Radiation Type Technology Electrodes Infrared DDH AlGaAs/AlGaAs P (anode) up typ. dimensions (µm) 360 120 typ. thickness 150 (±25) µm anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm dotted, 25% covered LED-05 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit 1.3 1.5 V Forward voltage IF = 20 mA VF Reverse voltage IR = 100 µA VR 5 Radiant power1 IF = 20 mA Φe 3.0 Radiant power2 IF = 20 mA Φe Peak wavelength IF = 20 mA λp Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 55 nm Switching time IF = 20 mA tr, tf 400 ns 1 2 V 895 4.0 mW 8.0 mW 905 915 nm Measured on bare chip on TO-18 header with EPIGAP equipment Measured on epoxy covered chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-905-17 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1