0$5 The item can replace IRLML6401 Approved by: Checked by: Issued by: SPECIFICATION PRODUCT: MODEL: P-Channel High Density Trench MAR 6 4 0 1 SOT23 HOPE MICROELECTRONIC CO.,LIMITED Tel:+86-755-82973805 Fax:+86-755-82973550 E-mail: [email protected] Page of http://www.hoperf.com P-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID FEATURES RDS(on) (m-ohm) Max ●Super high dense cell trench design for low RDS(on). 64 @ VGS = -10V ●Rugged and reliable. R -30V R 75 @ VGS = -4.5V -4.2A R MAR6401 R ●SOT-23-3L package. 120 @ VGS = -2.5V D SOT-23-3L D S G MARKING:A19T G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ± 12 V ID -4.2 A IDM -16 A IS -2.2 A PD 1.25 W TJ,TSTG - 55 to 150 °C a Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Parameter Symbol Typc Max Unit RthJA 75 100 °C/W Thermal Resistance,Junction-to-Ambient a ： Note a. Surface Mounted on FR4 Board , t ≤ 5sec . b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% . ： Tel:+86-755-82973805 Fax:+86-755-82973550 E-mail: [email protected] 2 2 http://www.hoperf.com ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter Min Typc Max Unit Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V , ID = -250uA Zero Gate Voltage Drain Current IDSS VDS = -24V , VGS = 0V -1 uA Gate-Body Leakage IGSS VGS = -12V , VDS = 0V -100 nA VGS(th) VDS = VGS , ID = -250uA -1.3 V VGS = -10V , ID = -4.2A 64 m-ohm VGS = -4.5V , ID = -3.0A 75 m-ohm VGS = -2.5V , ID = -1.2A 120 m-ohm -1.2 V OFF CHARACTERISTICS ON CHARACTERISTICS R R - 30 V R R b Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance R R R DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD DYNAMIC CHARACTERISTICS -0.5 R b VGS = 0V , IS = -1.0A c Input Capacitance CISS 1325 pF Output Capacitance COSS 172 pF 140 pF VDD = -15V , ID = -1A 5 ns tr VGEN = -4.5V 3 ns tD(OFF) RL = 15 ohm 30 ns 10 ns VDS = 15V , VGS = 0V f = 1.0MHz CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time c tD(ON) Rise Time Turn-Off Delay Time Fall Time tf RGEN = 10 ohm Total Gate Charge Qg VDS = -15V 27.8 nC Gate-Source Charge Qgs ID = -1A 3.2 nC Gate-Drain Charge Qgd VGS = -10V 2.72 nC ： Note b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% . c. Guaranteed by design , not subject to production testing . ： Tel:+86-755-82973805 Fax:+86-755-82973550 E-mail: [email protected] 3 3 http://www.hoperf.com