H8050 Shantou Huashan Electronic Devices Co.,Ltd. █ NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃ TO-92 Tj——Juncttion Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………1W VCBO——Collector-Base Voltage………………………………40V 1―Emitter，E 2―Base，B 3―Collector，C VCEO——Collector-Emitter Voltage……………………………25V V EB O ——Emitter-Base Voltage………………………………6V I C ——Collector Current………………………………………1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 0.1 μA VCB=35V, IE=0 IEBO Emitter Cut-off Current 0.1 μA VEB=6V, IC=0 HFE DC Current Gain 85 500 VCE=1V, IC=100mA 40 VBE VCE=1V, IC=800mA 1 V VCE=1V, IC=10mA VCE(sat） Collector- Emitter Saturation Voltage 0.5 V IC=800mA, IB=80mA VBE(sat) Base- Emitter Saturation Voltage 1.2 V IC=800mA,IB=80mA BVCBO Collector-Base Breakdown Voltage 40 V IC=100μA，IE=0 BVCEO Collector-Emitter Breakdown Voltage 25 V IC=2mA，IB=0 BVEBO Emitter- Base Breakdown Voltage 6 V IE=100μA，IC=0 Cob Output Capacacitance pF VCB=10V,IE=0，f=1MHz fT Current Gain-Bandwidth Product Base- Emitter Voltage 9.0 100 MHz VCE=10V, IC=50mA █ hFE Classification B 85—160 C D E 120—200 160—300 270—500 Shantou Huashan Electronic Devices Co.,Ltd. H8050